component
MCR100G-6-AE3-R
Public Made by Adomby adom
UTC Unisonic Tech Thyristors (SCR)/Modules, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
MCR100G-6-AE3-R
UTC Unisonic Tech · Thyristors (SCR)/Modules · SOT-23
MCR100G-6-AE3-R from UTC Unisonic Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the SCR; the main current return terminal, and the reference for the gate-cathode path (RGK of 1 kΩ is specified in the blocking tests). |
| 2 | G | input | Gate trigger input; limits are peak forward gate current IGM 1 A and peak reverse gate voltage VGRM 5 V (pulse width ≤1.0 µs), with forward average gate power PG(AV) 0.01 W. |
| 3 | A | passive | Anode, the main power terminal; for MCR100-6 the peak repetitive off-state voltage VDRM/VRRM is 400 V, and positive gate voltage must not be applied while the anode is at negative potential. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Repetitive Off-State Voltage (MCR100-6), TJ=-40 to 110°C, sine 50-60Hz, gate open | VDRM,VRRM | 400 | V | TJ=-40 to 110°C, sine wave 50-60Hz, gate open | 3 | ||
| On-State RMS Current (Tc=80°C, 180° conduction angles) | IT(RMS) | 0.8 | A | Tc=80°C, 180° conduction angles | 3 | ||
| Peak Non-Repetitive Surge Current | ITSM | 10 | A | 1/2 cycle, sine wave, 60Hz, TJ=25°C | 3 | ||
| Circuit Fusing Considerations | I2t | 0.415 | A2s | t=8.3 ms | 3 | ||
| Forward Peak Gate Power | PGM | 0.1 | W | TA=25°C, pulse width ≤1.0µs | 3 | ||
| Forward Average Gate Power | PG(AV) | 0.01 | W | TA=25°C, t=8.3ms | 3 | ||
| Peak Gate Current, Forward | IGM | 1 | A | TA=25°C, pulse width ≤1.0μs | 3 | ||
| Peak Gate Voltage, Reverse | VGRM | 5 | V | TA=25°C, pulse width ≤1.0μs | 3 | ||
| Operating Junction Temperature Range (rated VRRM and VDRM) | TJ | -40 | 110 | °C | Rated VRRM and VDRM | 3 | |
| Storage Temperature Range | TSTG | -40 | 150 | °C | 3 | ||
| Junction to Ambient (SOT-23/SOT-89) | θJA | 400 | °C/W | SOT-23/SOT-89 package | 3 | ||
| Peak Forward or Reverse Blocking Current, TC=25°C | IDRM, IRRM | 10 | μA | TC=25°C; VD=Rated VDRM and VRRM; RGK=1kΩ | 3 | ||
| Peak Forward or Reverse Blocking Current, TC=110°C | IDRM, IRRM | 100 | μA | TC=110°C; VD=Rated VDRM and VRRM; RGK=1kΩ | 3 | ||
| Critical Rate of Rise of Off-State Voltage | dV/dt | 20 | 35 | V/μs | VD=Rated VDRM, exponential waveform, RGK=1000Ω, TJ=110°C | 3 | |
| Peak Forward On-State Voltage | VTM | 1.7 | V | ITM=1A peak @ TA=25°C; pulse test width ≤1.0ms, duty cycle ≤1% | 3 | ||
| Gate Trigger Current (Continuous DC), TC=25°C | IGT | 30 | 100 | μA | VAK=7Vdc, RL=100Ω, TC=25°C; does not include RGK | 3 | |
| Holding Current, TC=25°C | IH | 0.5 | 5 | mA | VAK=7Vdc, initiating current=20mA | 3 | |
| Holding Current, TC=-40°C | IH | 10 | mA | VAK=7Vdc, initiating current=20mA | 3 | ||
| Latch Current, TC=25°C | IL | 0.6 | 10 | mA | VAK=7V, Ig=200μA | 3 | |
| Latch Current, TC=-40°C | IL | 15 | mA | VAK=7V, Ig=200μA | 3 | ||
| Gate Trigger Voltage (continuous dc), TC=25°C | VGT | 0.62 | 0.8 | V | VAK=7Vdc, RL=100Ω | 3 | |
| Gate Trigger Voltage (continuous dc), TC=-40°C | VGT | 1.2 | V | VAK=7Vdc, RL=100Ω | 3 | ||
| Critical Rate of Rise of On-State Current | di/dt | 50 | A/μs | IPK=20A; Pw=10μsec; diG/dt=1A/μsec, Igt=20mA | 3 |
CAD (KiCad official)
- Symbol:
MCR100G-6-AE3-R - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mcr100g-6-ae3-r-etched.step/mcr100g-6-ae3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mcr100g-6-ae3-r.step/mcr100g-6-ae3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (6 pp, sha256
00f03d84c0849446, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MCR100G-6-AE3-R
**UTC Unisonic Tech** · Thyristors (SCR)/Modules · SOT-23
MCR100G-6-AE3-R from UTC Unisonic Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the SCR; the main current return terminal, and the reference for the gate-cathode path (RGK of 1 kΩ is specified in the blocking tests). |
| 2 | G | input | Gate trigger input; limits are peak forward gate current IGM 1 A and peak reverse gate voltage VGRM 5 V (pulse width ≤1.0 µs), with forward average gate power PG(AV) 0.01 W. |
| 3 | A | passive | Anode, the main power terminal; for MCR100-6 the peak repetitive off-state voltage VDRM/VRRM is 400 V, and positive gate voltage must not be applied while the anode is at negative potential. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Repetitive Off-State Voltage (MCR100-6), TJ=-40 to 110°C, sine 50-60Hz, gate open | VDRM,VRRM | | | 400 | V | TJ=-40 to 110°C, sine wave 50-60Hz, gate open | 3 |
| On-State RMS Current (Tc=80°C, 180° conduction angles) | IT(RMS) | | | 0.8 | A | Tc=80°C, 180° conduction angles | 3 |
| Peak Non-Repetitive Surge Current | ITSM | | | 10 | A | 1/2 cycle, sine wave, 60Hz, TJ=25°C | 3 |
| Circuit Fusing Considerations | I2t | | | 0.415 | A2s | t=8.3 ms | 3 |
| Forward Peak Gate Power | PGM | | | 0.1 | W | TA=25°C, pulse width ≤1.0µs | 3 |
| Forward Average Gate Power | PG(AV) | | | 0.01 | W | TA=25°C, t=8.3ms | 3 |
| Peak Gate Current, Forward | IGM | | | 1 | A | TA=25°C, pulse width ≤1.0μs | 3 |
| Peak Gate Voltage, Reverse | VGRM | | | 5 | V | TA=25°C, pulse width ≤1.0μs | 3 |
| Operating Junction Temperature Range (rated VRRM and VDRM) | TJ | -40 | | 110 | °C | Rated VRRM and VDRM | 3 |
| Storage Temperature Range | TSTG | -40 | | 150 | °C | | 3 |
| Junction to Ambient (SOT-23/SOT-89) | θJA | | | 400 | °C/W | SOT-23/SOT-89 package | 3 |
| Peak Forward or Reverse Blocking Current, TC=25°C | IDRM, IRRM | | | 10 | μA | TC=25°C; VD=Rated VDRM and VRRM; RGK=1kΩ | 3 |
| Peak Forward or Reverse Blocking Current, TC=110°C | IDRM, IRRM | | | 100 | μA | TC=110°C; VD=Rated VDRM and VRRM; RGK=1kΩ | 3 |
| Critical Rate of Rise of Off-State Voltage | dV/dt | 20 | 35 | | V/μs | VD=Rated VDRM, exponential waveform, RGK=1000Ω, TJ=110°C | 3 |
| Peak Forward On-State Voltage | VTM | | | 1.7 | V | ITM=1A peak @ TA=25°C; pulse test width ≤1.0ms, duty cycle ≤1% | 3 |
| Gate Trigger Current (Continuous DC), TC=25°C | IGT | | 30 | 100 | μA | VAK=7Vdc, RL=100Ω, TC=25°C; does not include RGK | 3 |
| Holding Current, TC=25°C | IH | | 0.5 | 5 | mA | VAK=7Vdc, initiating current=20mA | 3 |
| Holding Current, TC=-40°C | IH | | | 10 | mA | VAK=7Vdc, initiating current=20mA | 3 |
| Latch Current, TC=25°C | IL | | 0.6 | 10 | mA | VAK=7V, Ig=200μA | 3 |
| Latch Current, TC=-40°C | IL | | | 15 | mA | VAK=7V, Ig=200μA | 3 |
| Gate Trigger Voltage (continuous dc), TC=25°C | VGT | | 0.62 | 0.8 | V | VAK=7Vdc, RL=100Ω | 3 |
| Gate Trigger Voltage (continuous dc), TC=-40°C | VGT | | | 1.2 | V | VAK=7Vdc, RL=100Ω | 3 |
| Critical Rate of Rise of On-State Current | di/dt | | | 50 | A/μs | IPK=20A; Pw=10μsec; diG/dt=1A/μsec, Igt=20mA | 3 |
## CAD (KiCad official)
- Symbol: `MCR100G-6-AE3-R`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mcr100g-6-ae3-r-etched.step` / `mcr100g-6-ae3-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mcr100g-6-ae3-r.step` / `mcr100g-6-ae3-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC Unisonic Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588954563164442624) (6 pp, sha256 `00f03d84c0849446`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mcr100g-6-ae3-r-datasheet.pdf)