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MCR100G-6-AE3-R

UTC Unisonic Tech · Thyristors (SCR)/Modules · SOT-23

MCR100G-6-AE3-R from UTC Unisonic Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the SCR; the main current return terminal, and the reference for the gate-cathode path (RGK of 1 kΩ is specified in the blocking tests).
2 G input Gate trigger input; limits are peak forward gate current IGM 1 A and peak reverse gate voltage VGRM 5 V (pulse width ≤1.0 µs), with forward average gate power PG(AV) 0.01 W.
3 A passive Anode, the main power terminal; for MCR100-6 the peak repetitive off-state voltage VDRM/VRRM is 400 V, and positive gate voltage must not be applied while the anode is at negative potential.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Repetitive Off-State Voltage (MCR100-6), TJ=-40 to 110°C, sine 50-60Hz, gate open VDRM,VRRM 400 V TJ=-40 to 110°C, sine wave 50-60Hz, gate open 3
On-State RMS Current (Tc=80°C, 180° conduction angles) IT(RMS) 0.8 A Tc=80°C, 180° conduction angles 3
Peak Non-Repetitive Surge Current ITSM 10 A 1/2 cycle, sine wave, 60Hz, TJ=25°C 3
Circuit Fusing Considerations I2t 0.415 A2s t=8.3 ms 3
Forward Peak Gate Power PGM 0.1 W TA=25°C, pulse width ≤1.0µs 3
Forward Average Gate Power PG(AV) 0.01 W TA=25°C, t=8.3ms 3
Peak Gate Current, Forward IGM 1 A TA=25°C, pulse width ≤1.0μs 3
Peak Gate Voltage, Reverse VGRM 5 V TA=25°C, pulse width ≤1.0μs 3
Operating Junction Temperature Range (rated VRRM and VDRM) TJ -40 110 °C Rated VRRM and VDRM 3
Storage Temperature Range TSTG -40 150 °C 3
Junction to Ambient (SOT-23/SOT-89) θJA 400 °C/W SOT-23/SOT-89 package 3
Peak Forward or Reverse Blocking Current, TC=25°C IDRM, IRRM 10 μA TC=25°C; VD=Rated VDRM and VRRM; RGK=1kΩ 3
Peak Forward or Reverse Blocking Current, TC=110°C IDRM, IRRM 100 μA TC=110°C; VD=Rated VDRM and VRRM; RGK=1kΩ 3
Critical Rate of Rise of Off-State Voltage dV/dt 20 35 V/μs VD=Rated VDRM, exponential waveform, RGK=1000Ω, TJ=110°C 3
Peak Forward On-State Voltage VTM 1.7 V ITM=1A peak @ TA=25°C; pulse test width ≤1.0ms, duty cycle ≤1% 3
Gate Trigger Current (Continuous DC), TC=25°C IGT 30 100 μA VAK=7Vdc, RL=100Ω, TC=25°C; does not include RGK 3
Holding Current, TC=25°C IH 0.5 5 mA VAK=7Vdc, initiating current=20mA 3
Holding Current, TC=-40°C IH 10 mA VAK=7Vdc, initiating current=20mA 3
Latch Current, TC=25°C IL 0.6 10 mA VAK=7V, Ig=200μA 3
Latch Current, TC=-40°C IL 15 mA VAK=7V, Ig=200μA 3
Gate Trigger Voltage (continuous dc), TC=25°C VGT 0.62 0.8 V VAK=7Vdc, RL=100Ω 3
Gate Trigger Voltage (continuous dc), TC=-40°C VGT 1.2 V VAK=7Vdc, RL=100Ω 3
Critical Rate of Rise of On-State Current di/dt 50 A/μs IPK=20A; Pw=10μsec; diG/dt=1A/μsec, Igt=20mA 3

CAD (KiCad official)

  • Symbol: MCR100G-6-AE3-R
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mcr100g-6-ae3-r-etched.step / mcr100g-6-ae3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mcr100g-6-ae3-r.step / mcr100g-6-ae3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (6 pp, sha256 00f03d84c0849446, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF