component
MCQ07NP03A-TP
Public Made by Adomby adom
MCC(美微科) MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMCQ07NP03A-TP
MCC(美微科) · MOSFETs · SOP-8
MCQ07NP03A-TP from MCC(美微科), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first MOSFET channel (labelled S1 in the pin diagram); the datasheet gives no separate pin-level voltage or current limit. |
| 2 | G1 | input | Gate of the first MOSFET channel; gate-source voltage is rated ±20 V. |
| 3 | S2 | passive | Source terminal of the second MOSFET channel (labelled S2 in the pin diagram); the datasheet gives no separate pin-level voltage or current limit. |
| 4 | G2 | input | Gate of the second MOSFET channel; gate-source voltage is rated ±20 V. |
| 5 | D2 | passive | Drain of the second MOSFET channel (labelled D2); drain-source voltage is rated 30 V for the N-channel device and -30 V for the P-channel device. |
| 6 | D2 | passive | Drain of the second MOSFET channel (labelled D2); drain-source voltage is rated 30 V for the N-channel device and -30 V for the P-channel device. |
| 7 | D1 | passive | Drain of the first MOSFET channel (labelled D1); drain-source voltage is rated 30 V for the N-channel device and -30 V for the P-channel device. |
| 8 | D1 | passive | Drain of the first MOSFET channel (labelled D1); drain-source voltage is rated 30 V for the N-channel device and -30 V for the P-channel device. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC(美微科) |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Gate-Threshold Voltage | VGS(th) | 1 | 1.5 | 2.2 | V | VDS=VGS, ID=250µA | 2 |
| N-ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| N-ch Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=30V, VGS=0V | 2 | ||
| N-ch Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250µA | 2 | ||
| N-ch Drain-Source On-Resistance | RDS(on) | 15 | 18 | mΩ | VGS=10V, ID=6A | 2 | |
| N-ch Drain-Source On-Resistance | RDS(on) | 23 | 30 | mΩ | VGS=4.5V, ID=5A | 2 | |
| N-ch Gate Resistance | RG | 1.7 | Ω | f=1MHz, Open drain | 2 | ||
| N-ch Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=6A | 2 | ||
| N-ch Reverse Recovery Time | trr | 11 | ns | IF=5.6A, dIF/dt=100A/μs | 2 | ||
| N-ch Reverse Recovery Charge | Qrr | 3 | nC | IF=5.6A, dIF/dt=100A/μs | 2 | ||
| N-ch Input Capacitance | Ciss | 357 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| N-ch Output Capacitance | Coss | 70 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| N-ch Reverse Transfer Capacitance | Crss | 60 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| N-ch Total Gate Charge | Qg | 8.5 | nC | VDS=15V, VGS=10V, ID=5.6A | 2 | ||
| N-ch Gate-Source Charge | Qgs | 0.9 | nC | VDS=15V, VGS=10V, ID=5.6A | 2 | ||
| N-ch Gate-Drain Charge | Qgd | 2 | nC | VDS=15V, VGS=10V, ID=5.6A | 2 | ||
| N-ch Turn-On Delay Time | td(on) | 5 | ns | VDD=15V, VGS=10V, RG=3Ω, ID=5.6A | 2 | ||
| N-ch Turn-On Rise Time | tr | 4 | ns | VDD=15V, VGS=10V, RG=3Ω, ID=5.6A | 2 | ||
| N-ch Turn-Off Delay Time | td(off) | 12 | ns | VDD=15V, VGS=10V, RG=3Ω, ID=5.6A | 2 | ||
| N-ch Turn-Off Fall Time | tf | 3 | ns | VDD=15V, VGS=10V, RG=3Ω, ID=5.6A | 2 | ||
| P-ch Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID=-250µA | 3 | ||
| P-ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| P-ch Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-30V, VGS=0V | 3 | ||
| P-ch Gate-Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VDS=VGS, ID=-250µA | 3 |
| P-ch Drain-Source On-Resistance | RDS(on) | 17 | 23 | mΩ | VGS=-10V, ID=-6A | 3 | |
| P-ch Drain-Source On-Resistance | RDS(on) | 22 | 34 | mΩ | VGS=-4.5V, ID=-5A | 3 | |
| P-ch Gate Resistance | RG | 10 | Ω | f=1MHz, Open drain | 3 | ||
| P-ch Continuous Body Diode Current | IS | -7 | A | 3 | |||
| P-ch Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-6A | 3 | ||
| P-ch Reverse Recovery Time | trr | 18 | ns | IF=-7.5A, dIF/dt=100A/μs | 3 | ||
| P-ch Reverse Recovery Charge | Qrr | 8 | nC | IF=-7.5A, dIF/dt=100A/μs | 3 | ||
| P-ch Input Capacitance | Ciss | 1623 | pF | VDS=-15V, VGS=0V, f=1MHz | 3 | ||
| P-ch Output Capacitance | Coss | 188 | pF | VDS=-15V, VGS=0V, f=1MHz | 3 | ||
| P-ch Reverse Transfer Capacitance | Crss | 165 | pF | VDS=-15V, VGS=0V, f=1MHz | 3 | ||
| P-ch Total Gate Charge | Qg | 31 | nC | VDS=-15V, VGS=-10V, ID=-9A | 3 | ||
| P-ch Gate-Source Charge | Qgs | 4 | nC | VDS=-15V, VGS=-10V, ID=-9A | 3 | ||
| P-ch Gate-Drain Charge | Qgd | 5.5 | nC | VDS=-15V, VGS=-10V, ID=-9A | 3 | ||
| P-ch Turn-On Delay Time | td(on) | 9 | ns | VDD=-15V, VGS=-10V, RG=2.5Ω, ID=-7.5A | 3 | ||
| P-ch Turn-On Rise Time | tr | 13 | ns | VDD=-15V, VGS=-10V, RG=2.5Ω, ID=-7.5A | 3 | ||
| P-ch Turn-Off Delay Time | td(off) | 54 | ns | VDD=-15V, VGS=-10V, RG=2.5Ω, ID=-7.5A | 3 | ||
| P-ch Turn-Off Fall Time | tf | 25 | ns | VDD=-15V, VGS=-10V, RG=2.5Ω, ID=-7.5A | 3 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Total Power Dissipation | PD | 1.6 | W | Note 3 | 1 | ||
| N-ch Drain-Source Voltage | VDS | 30 | V | 1 | |||
| P-ch Drain-Source Voltage | VDS | -30 | V | 1 | |||
| N-ch Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| P-ch Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| N-ch Continuous Drain Current | ID | 7 | A | TA=25°C | 1 | ||
| N-ch Continuous Drain Current | ID | 5.6 | A | TA=70°C | 1 | ||
| P-ch Continuous Drain Current | ID | -7 | A | TA=25°C | 1 | ||
| P-ch Continuous Drain Current | ID | -5.6 | A | TA=70°C | 1 | ||
| N-ch Pulsed Drain Current | IDM | 28 | A | Note 4 | 1 | ||
| P-ch Pulsed Drain Current | IDM | -28 | A | Note 4 | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 78 | °C/W | Note 2: 1 in² FR-4 board, 2oz copper, still air, TA=25°C | 1 |
CAD (KiCad official)
- Symbol:
MCQ07NP03A-TP - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
mcq07np03a-tp-etched.step/mcq07np03a-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mcq07np03a-tp.step/mcq07np03a-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MCC(美微科) datasheet (10 pp, sha256
7e0d0a5f10cef67f, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).