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MC74VHC244DTG

onsemi · Buffers / Drivers · TSSOP-20

MC74VHC244DTG from onsemi, in a TSSOP-20. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OEA input Active-low output enable for the YA1-YA4 outputs; when high, the YA outputs are placed in the high-impedance (Z) state per the function table.
2 A1 input Data input for buffer 1 of the A bank, passed noninverted to YA1 when OEA is low; the datasheet recommends VIN between 0 V and 5.5 V.
3 YB4 tri_state Noninverting 3-state buffer output of the B bank, high-impedance when OEB is high; maximum DC output current is 25 mA per pin.
4 A2 input Data input for buffer 2 of the A bank, passed noninverted to YA2 when OEA is low; the datasheet recommends VIN between 0 V and 5.5 V.
5 YB3 tri_state Noninverting 3-state buffer output of the B bank, high-impedance when OEB is high; maximum DC output current is 25 mA per pin.
6 A3 input Data input for buffer 3 of the A bank, passed noninverted to YA3 when OEA is low; the datasheet recommends VIN between 0 V and 5.5 V.
7 YB2 tri_state Noninverting 3-state buffer output of the B bank, high-impedance when OEB is high; maximum DC output current is 25 mA per pin.
8 A4 input Data input for buffer 4 of the A bank, passed noninverted to YA4 when OEA is low; the datasheet recommends VIN between 0 V and 5.5 V.
9 YB1 tri_state Noninverting 3-state buffer output of the B bank, high-impedance when OEB is high; maximum DC output current is 25 mA per pin.
10 GND power_in Ground reference; all device voltages are referenced to GND, and the recommended VCC range is 2.0 V to 5.5 V.
11 B4 input Data input for buffer 4 of the B bank, passed noninverted to YB4 when OEB is low; the datasheet recommends VIN between 0 V and 5.5 V.
12 YA4 tri_state Noninverting 3-state buffer output of the A bank, high-impedance when OEA is high; maximum DC output current is 25 mA per pin.
13 B3 input Data input for buffer 3 of the B bank, passed noninverted to YB3 when OEB is low; the datasheet recommends VIN between 0 V and 5.5 V.
14 YA3 tri_state Noninverting 3-state buffer output of the A bank, high-impedance when OEA is high; maximum DC output current is 25 mA per pin.
15 B2 input Data input for buffer 2 of the B bank, passed noninverted to YB2 when OEB is low; the datasheet recommends VIN between 0 V and 5.5 V.
16 YA2 tri_state Noninverting 3-state buffer output of the A bank, high-impedance when OEA is high; maximum DC output current is 25 mA per pin.
17 B1 input Data input for buffer 1 of the B bank, passed noninverted to YB1 when OEB is low; the datasheet recommends VIN between 0 V and 5.5 V.
18 YA1 tri_state Noninverting 3-state buffer output of the A bank, high-impedance when OEA is high; maximum DC output current is 25 mA per pin.
19 OEB input Active-low output enable for the YB1-YB4 outputs; when high, the YB outputs are placed in the high-impedance (Z) state per the function table.
20 VCC power_in Positive DC supply; the datasheet specifies a recommended operating range of 2.0 V to 5.5 V and an absolute maximum of 7.0 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package TSSOP-20
Category Logic ICs
Pins 20

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Positive DC Supply Voltage VCC -0.5 7 V 2
Digital Input Voltage VIN -0.5 7 V 2
DC Output Voltage VOUT -0.5 V upper limit printed as VCC +0.5 V 2
Input Diode Current IIK -20 mA 2
Output Diode Current IOK 20 mA 2
DC Output Current, per Pin IOUT 25 mA 2
DC Supply Current, VCC and GND Pins ICC 75 mA 2
Power Dissipation in Still Air PD 450 mW TSSOP 2
Storage Temperature Range TSTG -65 150 °C 2
ESD Withstand Voltage, Human Body Model VESD 2000 V Human Body Model (Note 2); printed >2000 2
ESD Withstand Voltage, Machine Model VESD 200 V Machine Model (Note 3); printed >200 2
ESD Withstand Voltage, Charged Device Model VESD 2000 V Charged Device Model (Note 4); printed >2000 2
Latchup Performance ILATCHUP 300 mA Above VCC and below GND at 125°C (Note 5) 2
DC Supply Voltage VCC 2 5.5 V 3
DC Input Voltage VIN 0 5.5 V 3
DC Output Voltage VOUT 0 V upper limit printed as VCC 3
Operating Temperature Range, all Package Types TA -55 125 °C 3
Input Rise or Fall Time tr, tf 0 100 ns/V VCC = 3.3 V + 0.3 V 3
Input Rise or Fall Time tr, tf 0 20 ns/V VCC = 5.0 V + 0.5 V 3
Thermal Resistance, Junction-to-Ambient JA 128 °C/W TSSOP 2
Minimum High-Level Input Voltage VIH 1.5 V VCC = 2.0 V, TA = 25°C 3
Minimum High-Level Input Voltage VIH 0.7 ×VCC VCC = 3.0 to 5.5 V, TA = 25°C 3
Maximum Low-Level Input Voltage VIL 0.5 V VCC = 2.0 V, TA = 25°C 3
Maximum Low-Level Input Voltage VIL 0.3 ×VCC VCC = 3.0 to 5.5 V, TA = 25°C 3
Maximum High-Level Output Voltage VOH 1.9 V VIN = VIH or VIL, IOH = −50 µA, VCC = 2.0 V, TA = 25°C 3
Maximum High-Level Output Voltage VOH 2.9 V VIN = VIH or VIL, IOH = −50 µA, VCC = 3.0 V, TA = 25°C 3
Maximum High-Level Output Voltage VOH 4.4 V VIN = VIH or VIL, IOH = −50 µA, VCC = 4.5 V, TA = 25°C 3
Maximum High-Level Output Voltage VOH 2.58 V VIN = VIH or VIL, IOH = −4 mA, VCC = 3.0 V, TA = 25°C 3
Maximum High-Level Output Voltage VOH 3.94 V VIN = VIH or VIL, IOH = −8 mA, VCC = 4.5 V, TA = 25°C 3
Maximum High-Level Output Voltage VOH 2.34 V VIN = VIH or VIL, IOH = −4 mA, VCC = 3.0 V, −55°C ≤ TA ≤ 125°C 3
Maximum High-Level Output Voltage VOH 3.66 V VIN = VIH or VIL, IOH = −8 mA, VCC = 4.5 V, −55°C ≤ TA ≤ 125°C 3
Maximum Low-Level Output Voltage VOL 0.1 V VIN = VIH or VIL, IOL = 50 µA, VCC = 2.0 V, TA = 25°C 3
Maximum Low-Level Output Voltage VOL 0.36 V VIN = VIH or VIL, IOL = 4 mA, VCC = 3.0 V, TA = 25°C 3
Maximum Low-Level Output Voltage VOL 0.52 V VIN = VIH or VIL, IOL = 4 mA, VCC = 3.0 V, −55°C ≤ TA ≤ 125°C 3
Input Leakage Current IIN -0.1 0.1 µA VIN = 5.5 V or GND, VCC = 0 to 5.5 V, TA = 25°C 3
Input Leakage Current IIN -1 1 µA VIN = 5.5 V or GND, VCC = 0 to 5.5 V, −55°C ≤ TA ≤ 125°C 3
Maximum 3-State Leakage Current IOZ -0.25 0.25 µA VIN = VIH or VIL, VOUT = VCC or GND, VCC = 5.5 V, TA = 25°C 3
Maximum 3-State Leakage Current IOZ -2.5 2.5 µA VIN = VIH or VIL, VOUT = VCC or GND, VCC = 5.5 V, −55°C ≤ TA ≤ 125°C 3
Maximum Quiescent Supply Current (per package) ICC 4 µA VIN = VCC or GND, VCC = 5.5 V, TA = 25°C 3
Maximum Quiescent Supply Current (per package) ICC 40 µA VIN = VCC or GND, VCC = 5.5 V, −55°C ≤ TA ≤ 125°C 3
Maximum Propagation Delay, A to YA or B to YB tPLH, tPHL 1 8.3 ns VCC = 3.3 ± 0.3 V, CL = 15 pF, TA = 25°C 4
Maximum Propagation Delay, A to YA or B to YB tPLH, tPHL 1 11.9 ns VCC = 3.3 ± 0.3 V, CL = 50 pF, TA = 25°C 4
Maximum Propagation Delay, A to YA or B to YB tPLH, tPHL 1 5.4 ns VCC = 5.0 ± 0.5 V, CL = 15 pF, TA = 25°C 4
Maximum Propagation Delay, A to YA or B to YB tPLH, tPHL 1 7.5 ns VCC = 5.0 ± 0.5 V, CL = 50 pF, TA = 25°C 4
Maximum Input Capacitance Cin 4 10 pF TA = 25°C 4
Quiet Output Maximum Dynamic VOL VOLP 0.6 0.9 V Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V, TA = 25°C 4

CAD (KiCad official)

  • Symbol: MC74VHC244DTG
  • Footprint: Package_SO:TSSOP-20_4.4x6.5mm_P0.65mm
  • 3D model: TSSOP-20 (KiCad packages3D, STEP)
  • 3D model files: mc74vhc244dtg-etched.step / mc74vhc244dtg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mc74vhc244dtg.step / mc74vhc244dtg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 9dd1c8301742cae4, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF