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MBT3946

Public Made by Adom

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Slkor SLKORMICRO Elec Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MBT3946

Slkor SLKORMICRO Elec · Bipolar (BJT) · SOT-363

MBT3946 from Slkor SLKORMICRO Elec, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of the NPN transistor (VCEO 40 Vdc, VCBO 60 Vdc, VEBO 6.0 Vdc, IC 200 mAdc).
2 B1 input Base of the NPN transistor (VEBO 6.0 Vdc max).
3 C2 passive Collector of the PNP transistor (VCEO -40 Vdc, VCBO -40 Vdc, IC -200 mAdc).
4 E2 passive Emitter of the PNP transistor (VEBO -5.0 Vdc max).
5 B2 input Base of the PNP transistor (VEBO -5.0 Vdc max).
6 C1 passive Collector of the NPN transistor (VCEO 40 Vdc, VCBO 60 Vdc, IC 200 mAdc).

Key specifications

Parameter Value
Manufacturer Slkor SLKORMICRO Elec
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage (NPN) V(BR)CEO 40 Vdc IC=1.0 mAdc, IB=0 2
Collector-Emitter Breakdown Voltage (PNP) V(BR)CEO -40 Vdc IC=-1.0 mAdc, IB=0 2
Collector-Base Breakdown Voltage (NPN) V(BR)CBO 60 Vdc IC=10 µAdc, IE=0 2
Collector-Base Breakdown Voltage (PNP) V(BR)CBO -40 Vdc IC=-10 µAdc, IE=0 2
Emitter-Base Breakdown Voltage (NPN) V(BR)EBO 6 Vdc IE=10 µAdc, IC=0 2
Emitter-Base Breakdown Voltage (PNP) V(BR)EBO -5 Vdc IE=-10 µAdc, IC=0 2
Base Cutoff Current (NPN) IBL 50 nAdc VCE=30 Vdc, VEB=3.0 Vdc 2
Base Cutoff Current (PNP) IBL -50 nAdc VCE=-30 Vdc, VEB=-3.0 Vdc 2
Collector Cutoff Current (NPN) ICEX 50 nAdc VCE=30 Vdc, VEB=3.0 Vdc 2
Collector Cutoff Current (PNP) ICEX -50 nAdc VCE=-30 Vdc, VEB=-3.0 Vdc 2
DC Current Gain (NPN) HFE 40 IC=0.1 mAdc, VCE=1.0 Vdc 2
DC Current Gain (NPN) HFE 70 IC=1.0 mAdc, VCE=1.0 Vdc 2
DC Current Gain (NPN) HFE 100 IC=10 mAdc, VCE=1.0 Vdc 2
DC Current Gain (NPN) HFE 60 IC=50 mAdc, VCE=1.0 Vdc 2
DC Current Gain (NPN) HFE 30 IC=100 mAdc, VCE=1.0 Vdc 2
DC Current Gain (NPN) upper limit HFE 300 2
DC Current Gain (PNP) HFE 60 IC=-0.1 mAdc, VCE=-1.0 Vdc 2
DC Current Gain (PNP) HFE 80 IC=-1.0 mAdc, VCE=-1.0 Vdc 2
DC Current Gain (PNP) HFE 100 IC=-10 mAdc, VCE=-1.0 Vdc 2
DC Current Gain (PNP) HFE 30 IC=-100 mAdc, VCE=-1.0 Vdc 2
Collector-Emitter Saturation Voltage (NPN) VCE(sat) 0.2 Vdc IC=10 mAdc, IB=1.0 mAdc 2
Collector-Emitter Saturation Voltage (NPN) VCE(sat) 0.3 Vdc IC=50 mAdc, IB=5.0 mAdc 2
Collector-Emitter Saturation Voltage (PNP) VCE(sat) -0.25 Vdc IC=-10 mAdc, IB=-1.0 mAdc 2
Collector-Emitter Saturation Voltage (PNP) VCE(sat) -0.4 Vdc IC=-50 mAdc, IB=-5.0 mAdc 2
Base-Emitter Saturation Voltage (NPN) VBE(sat) 0.65 0.85 Vdc IC=10 mAdc, IB=1.0 mAdc 2
Base-Emitter Saturation Voltage (NPN) VBE(sat) 0.95 Vdc IC=50 mAdc, IB=5.0 mAdc 2
Base-Emitter Saturation Voltage (PNP) VBE(sat) -0.65 -0.85 Vdc IC=-10 mAdc, IB=-1.0 mAdc 2
Base-Emitter Saturation Voltage (PNP) VBE(sat) -0.95 Vdc IC=-50 mAdc, IB=-5.0 mAdc 2
Current-Gain-Bandwidth Product (NPN) fT 300 MHz IC=10 mAdc, VCE=20 Vdc, f=100 MHz 3
Current-Gain-Bandwidth Product (PNP) fT 250 MHz IC=-10 mAdc, VCE=-20 Vdc, f=100 MHz 3
Output Capacitance (NPN) Cobo 4 pF VCB=5.0 Vdc, IE=0, f=1.0 MHz 3
Output Capacitance (PNP) Cobo 4.5 pF VCB=-5.0 Vdc, IE=0, f=1.0 MHz 3
Input Capacitance (NPN) Cibo 8 pF VEB=0.5 Vdc, IC=0, f=1.0 MHz 3
Input Capacitance (PNP) Cibo 10 pF VEB=-0.5 Vdc, IC=0, f=1.0 MHz 3
Small-Signal Current Gain (NPN) hfe 100 400 VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHz 3
Small-Signal Current Gain (PNP) hfe 100 400 VCE=-10 Vdc, IC=-1.0 mAdc, f=1.0 kHz 3
Noise Figure (NPN) NF 4 dB VCE=5.0 Vdc, IC=100 µAdc, RS=1.0 k ohms, f=1.0 kHz 3
Noise Figure (PNP) NF 4.5 dB VCE=-5.0 Vdc, IC=-100 µAdc, RS=1.0 k ohms, f=1.0 kHz 3
Delay Time (NPN) td 35 ns VCC=3.0 Vdc, VBE=-0.5 Vdc 3
Rise Time (NPN) tr 35 ns IC=10 mAdc, IB1=1.0 mAdc 3
Storage Time (NPN) ts 200 ns VCC=3.0 Vdc, IC=10 mAdc, IB1=IB2=1.0 mAdc 3
Fall Time (NPN) tf 50 ns VCC=3.0 Vdc, IC=10 mAdc, IB1=IB2=1.0 mAdc 3
Delay Time (PNP) td 35 ns VCC=-3.0 Vdc, VBE=0.5 Vdc 3
Rise Time (PNP) tr 35 ns IC=-10 mAdc, IB1=-1.0 mAdc 3
Storage Time (PNP) ts 225 ns VCC=-3.0 Vdc, IC=-10 mAdc, IB1=IB2=-1.0 mAdc 3
Fall Time (PNP) tf 75 ns VCC=-3.0 Vdc, IC=-10 mAdc, IB1=IB2=-1.0 mAdc 3
Collector-Emitter Voltage (NPN) VCEO 40 Vdc 1
Collector-Emitter Voltage (PNP) VCEO -40 Vdc 1
Collector-Base Voltage (NPN) VCBO 60 Vdc 1
Collector-Base Voltage (PNP) VCBO -40 Vdc 1
Emitter-Base Voltage (NPN) VEBO 6 Vdc 1
Emitter-Base Voltage (PNP) VEBO -5 Vdc 1
Collector Current-Continuous (NPN) IC 200 mAdc 1
Collector Current-Continuous (PNP) IC -200 mAdc 1
Total Package Dissipation PD 150 mW TA=25 C 1
Thermal Resistance, Junction to Ambient R qJA 833 C/W 1
Junction and Storage Temperature TJ,Tstg -55 150 C 1

CAD (KiCad official)

  • Symbol: MBT3946
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mbt3946-etched.step / mbt3946-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mbt3946.step / mbt3946.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Slkor SLKORMICRO Elec datasheet (11 pp, sha256 719e25fc9fd4a56a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF