component
MBT3946
Public Made by Adomby adom
Slkor SLKORMICRO Elec Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| mbt3946-etched.glb | 17d ago |
| mbt3946-etched.step | 17d ago |
| mbt3946-hero.glb | 17d ago |
| mbt3946-hero.overlay.json | 17d ago |
| mbt3946.glb | 17d ago |
| mbt3946.kicad_mod | 17d ago |
| mbt3946.kicad_sym | 17d ago |
| mbt3946.lbr | 17d ago |
| mbt3946.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
MBT3946
Slkor SLKORMICRO Elec · Bipolar (BJT) · SOT-363
MBT3946 from Slkor SLKORMICRO Elec, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of the NPN transistor (VCEO 40 Vdc, VCBO 60 Vdc, VEBO 6.0 Vdc, IC 200 mAdc). |
| 2 | B1 | input | Base of the NPN transistor (VEBO 6.0 Vdc max). |
| 3 | C2 | passive | Collector of the PNP transistor (VCEO -40 Vdc, VCBO -40 Vdc, IC -200 mAdc). |
| 4 | E2 | passive | Emitter of the PNP transistor (VEBO -5.0 Vdc max). |
| 5 | B2 | input | Base of the PNP transistor (VEBO -5.0 Vdc max). |
| 6 | C1 | passive | Collector of the NPN transistor (VCEO 40 Vdc, VCBO 60 Vdc, IC 200 mAdc). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (NPN) | V(BR)CEO | 40 | Vdc | IC=1.0 mAdc, IB=0 | 2 | ||
| Collector-Emitter Breakdown Voltage (PNP) | V(BR)CEO | -40 | Vdc | IC=-1.0 mAdc, IB=0 | 2 | ||
| Collector-Base Breakdown Voltage (NPN) | V(BR)CBO | 60 | Vdc | IC=10 µAdc, IE=0 | 2 | ||
| Collector-Base Breakdown Voltage (PNP) | V(BR)CBO | -40 | Vdc | IC=-10 µAdc, IE=0 | 2 | ||
| Emitter-Base Breakdown Voltage (NPN) | V(BR)EBO | 6 | Vdc | IE=10 µAdc, IC=0 | 2 | ||
| Emitter-Base Breakdown Voltage (PNP) | V(BR)EBO | -5 | Vdc | IE=-10 µAdc, IC=0 | 2 | ||
| Base Cutoff Current (NPN) | IBL | 50 | nAdc | VCE=30 Vdc, VEB=3.0 Vdc | 2 | ||
| Base Cutoff Current (PNP) | IBL | -50 | nAdc | VCE=-30 Vdc, VEB=-3.0 Vdc | 2 | ||
| Collector Cutoff Current (NPN) | ICEX | 50 | nAdc | VCE=30 Vdc, VEB=3.0 Vdc | 2 | ||
| Collector Cutoff Current (PNP) | ICEX | -50 | nAdc | VCE=-30 Vdc, VEB=-3.0 Vdc | 2 | ||
| DC Current Gain (NPN) | HFE | 40 | IC=0.1 mAdc, VCE=1.0 Vdc | 2 | |||
| DC Current Gain (NPN) | HFE | 70 | IC=1.0 mAdc, VCE=1.0 Vdc | 2 | |||
| DC Current Gain (NPN) | HFE | 100 | IC=10 mAdc, VCE=1.0 Vdc | 2 | |||
| DC Current Gain (NPN) | HFE | 60 | IC=50 mAdc, VCE=1.0 Vdc | 2 | |||
| DC Current Gain (NPN) | HFE | 30 | IC=100 mAdc, VCE=1.0 Vdc | 2 | |||
| DC Current Gain (NPN) upper limit | HFE | 300 | 2 | ||||
| DC Current Gain (PNP) | HFE | 60 | IC=-0.1 mAdc, VCE=-1.0 Vdc | 2 | |||
| DC Current Gain (PNP) | HFE | 80 | IC=-1.0 mAdc, VCE=-1.0 Vdc | 2 | |||
| DC Current Gain (PNP) | HFE | 100 | IC=-10 mAdc, VCE=-1.0 Vdc | 2 | |||
| DC Current Gain (PNP) | HFE | 30 | IC=-100 mAdc, VCE=-1.0 Vdc | 2 | |||
| Collector-Emitter Saturation Voltage (NPN) | VCE(sat) | 0.2 | Vdc | IC=10 mAdc, IB=1.0 mAdc | 2 | ||
| Collector-Emitter Saturation Voltage (NPN) | VCE(sat) | 0.3 | Vdc | IC=50 mAdc, IB=5.0 mAdc | 2 | ||
| Collector-Emitter Saturation Voltage (PNP) | VCE(sat) | -0.25 | Vdc | IC=-10 mAdc, IB=-1.0 mAdc | 2 | ||
| Collector-Emitter Saturation Voltage (PNP) | VCE(sat) | -0.4 | Vdc | IC=-50 mAdc, IB=-5.0 mAdc | 2 | ||
| Base-Emitter Saturation Voltage (NPN) | VBE(sat) | 0.65 | 0.85 | Vdc | IC=10 mAdc, IB=1.0 mAdc | 2 | |
| Base-Emitter Saturation Voltage (NPN) | VBE(sat) | 0.95 | Vdc | IC=50 mAdc, IB=5.0 mAdc | 2 | ||
| Base-Emitter Saturation Voltage (PNP) | VBE(sat) | -0.65 | -0.85 | Vdc | IC=-10 mAdc, IB=-1.0 mAdc | 2 | |
| Base-Emitter Saturation Voltage (PNP) | VBE(sat) | -0.95 | Vdc | IC=-50 mAdc, IB=-5.0 mAdc | 2 | ||
| Current-Gain-Bandwidth Product (NPN) | fT | 300 | MHz | IC=10 mAdc, VCE=20 Vdc, f=100 MHz | 3 | ||
| Current-Gain-Bandwidth Product (PNP) | fT | 250 | MHz | IC=-10 mAdc, VCE=-20 Vdc, f=100 MHz | 3 | ||
| Output Capacitance (NPN) | Cobo | 4 | pF | VCB=5.0 Vdc, IE=0, f=1.0 MHz | 3 | ||
| Output Capacitance (PNP) | Cobo | 4.5 | pF | VCB=-5.0 Vdc, IE=0, f=1.0 MHz | 3 | ||
| Input Capacitance (NPN) | Cibo | 8 | pF | VEB=0.5 Vdc, IC=0, f=1.0 MHz | 3 | ||
| Input Capacitance (PNP) | Cibo | 10 | pF | VEB=-0.5 Vdc, IC=0, f=1.0 MHz | 3 | ||
| Small-Signal Current Gain (NPN) | hfe | 100 | 400 | VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHz | 3 | ||
| Small-Signal Current Gain (PNP) | hfe | 100 | 400 | VCE=-10 Vdc, IC=-1.0 mAdc, f=1.0 kHz | 3 | ||
| Noise Figure (NPN) | NF | 4 | dB | VCE=5.0 Vdc, IC=100 µAdc, RS=1.0 k ohms, f=1.0 kHz | 3 | ||
| Noise Figure (PNP) | NF | 4.5 | dB | VCE=-5.0 Vdc, IC=-100 µAdc, RS=1.0 k ohms, f=1.0 kHz | 3 | ||
| Delay Time (NPN) | td | 35 | ns | VCC=3.0 Vdc, VBE=-0.5 Vdc | 3 | ||
| Rise Time (NPN) | tr | 35 | ns | IC=10 mAdc, IB1=1.0 mAdc | 3 | ||
| Storage Time (NPN) | ts | 200 | ns | VCC=3.0 Vdc, IC=10 mAdc, IB1=IB2=1.0 mAdc | 3 | ||
| Fall Time (NPN) | tf | 50 | ns | VCC=3.0 Vdc, IC=10 mAdc, IB1=IB2=1.0 mAdc | 3 | ||
| Delay Time (PNP) | td | 35 | ns | VCC=-3.0 Vdc, VBE=0.5 Vdc | 3 | ||
| Rise Time (PNP) | tr | 35 | ns | IC=-10 mAdc, IB1=-1.0 mAdc | 3 | ||
| Storage Time (PNP) | ts | 225 | ns | VCC=-3.0 Vdc, IC=-10 mAdc, IB1=IB2=-1.0 mAdc | 3 | ||
| Fall Time (PNP) | tf | 75 | ns | VCC=-3.0 Vdc, IC=-10 mAdc, IB1=IB2=-1.0 mAdc | 3 | ||
| Collector-Emitter Voltage (NPN) | VCEO | 40 | Vdc | 1 | |||
| Collector-Emitter Voltage (PNP) | VCEO | -40 | Vdc | 1 | |||
| Collector-Base Voltage (NPN) | VCBO | 60 | Vdc | 1 | |||
| Collector-Base Voltage (PNP) | VCBO | -40 | Vdc | 1 | |||
| Emitter-Base Voltage (NPN) | VEBO | 6 | Vdc | 1 | |||
| Emitter-Base Voltage (PNP) | VEBO | -5 | Vdc | 1 | |||
| Collector Current-Continuous (NPN) | IC | 200 | mAdc | 1 | |||
| Collector Current-Continuous (PNP) | IC | -200 | mAdc | 1 | |||
| Total Package Dissipation | PD | 150 | mW | TA=25 C | 1 | ||
| Thermal Resistance, Junction to Ambient | R qJA | 833 | C/W | 1 | |||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | C | 1 |
CAD (KiCad official)
- Symbol:
MBT3946 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
mbt3946-etched.step/mbt3946-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mbt3946.step/mbt3946.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Slkor SLKORMICRO Elec datasheet (11 pp, sha256
719e25fc9fd4a56a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).