# MBT3906DW1T1G

**onsemi** · Bipolar (BJT) · SOT-363

MBT3906DW1T1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E2 | passive | Emitter of transistor Q2 (PNP, VCEO −40 Vdc, IC −200 mAdc max). |
| 2 | B2 | input | Base of transistor Q2 (PNP, VEBO −5.0 Vdc max). |
| 3 | C1 | passive | Collector of transistor Q1 (PNP, VCBO −40 Vdc, IC −200 mAdc max). |
| 4 | E1 | passive | Emitter of transistor Q1 (PNP, VCEO −40 Vdc, IC −200 mAdc max). |
| 5 | B1 | input | Base of transistor Q1 (PNP, VEBO −5.0 Vdc max). |
| 6 | C2 | passive | Collector of transistor Q2 (PNP, VCBO −40 Vdc, IC −200 mAdc max). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector−Emitter Voltage | VCEO |  |  | -40 | Vdc |  | 1 |
| Collector−Base Voltage | VCBO |  |  | -40 | Vdc |  | 1 |
| Emitter−Base Voltage | VEBO |  |  | -5 | Vdc |  | 1 |
| Collector Current − Continuous | IC |  |  | -200 | mAdc |  | 1 |
| Total Package Dissipation | PD |  |  | 150 | mW | TA = 25°C (Note 1) | 1 |
| Thermal Resistance, Junction−to−Ambient | RJA |  |  | 833 | °C/W |  | 1 |
| Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Collector−Emitter Breakdown Voltage | V(BR)CEO | -40 |  |  | Vdc | TA = 25°C; Note 2 | 2 |
| Collector−Base Breakdown Voltage | V(BR)CBO | -40 |  |  | Vdc | TA = 25°C | 2 |
| Emitter−Base Breakdown Voltage | V(BR)EBO | -5 |  |  | Vdc | TA = 25°C | 2 |
| Base Cutoff Current | IBL |  |  | -50 | nAdc | TA = 25°C | 2 |
| Collector Cutoff Current | ICEX |  |  | -50 | nAdc | TA = 25°C | 2 |
| DC Current Gain (IC = −0.1 mAdc, VCE = −1.0 Vdc) | hFE | 60 |  |  |  | TA = 25°C; IC = −0.1 mAdc, VCE = −1.0 Vdc | 2 |
| DC Current Gain (IC = −1.0 mAdc, VCE = −1.0 Vdc) | hFE | 80 |  |  |  | TA = 25°C; IC = −1.0 mAdc, VCE = −1.0 Vdc | 2 |
| DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) | hFE | 100 |  | 300 |  | TA = 25°C; IC = −10 mAdc, VCE = −1.0 Vdc | 2 |
| DC Current Gain (IC = −50 mAdc, VCE = −1.0 Vdc) | hFE | 60 |  |  |  | TA = 25°C; IC = −50 mAdc, VCE = −1.0 Vdc | 2 |
| DC Current Gain (IC = −100 mAdc, VCE = −1.0 Vdc) | hFE | 30 |  |  |  | TA = 25°C; IC = −100 mAdc, VCE = −1.0 Vdc | 2 |
| Collector−Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) | VCE(sat) |  |  | -0.25 | Vdc | TA = 25°C; IC = −10 mAdc, IB = −1.0 mAdc | 2 |
| Collector−Emitter Saturation Voltage (IC = −50 mAdc, IB = −5.0 mAdc) | VCE(sat) |  |  | -0.4 | Vdc | TA = 25°C; IC = −50 mAdc, IB = −5.0 mAdc | 2 |
| Base−Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) | VBE(sat) | -0.65 |  | -0.85 | Vdc | TA = 25°C; IC = −10 mAdc, IB = −1.0 mAdc | 2 |
| Base−Emitter Saturation Voltage (IC = −50 mAdc, IB = −5.0 mAdc) | VBE(sat) |  |  | -0.95 | Vdc | TA = 25°C; IC = −50 mAdc, IB = −5.0 mAdc | 2 |
| Current−Gain − Bandwidth Product | fT | 250 |  |  | MHz | TA = 25°C | 2 |
| Output Capacitance | Cobo |  |  | 4.5 | pF | TA = 25°C | 2 |
| Input Capacitance | Cibo |  |  | 10 | pF | TA = 25°C | 2 |
| Input Impedance | hie | 2 |  | 12 | k | TA = 25°C; VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz | 2 |
| Voltage Feedback Ratio | hre | 0.1 |  | 10 | X 10−4 | TA = 25°C; VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz | 2 |
| Small−Signal Current Gain | hfe | 100 |  | 400 |  | TA = 25°C; VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz | 2 |
| Output Admittance | hoe | 3 |  | 60 | mhos | TA = 25°C; VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz | 2 |
| Noise Figure | NF |  |  | 4 | dB | TA = 25°C; VCE = −5.0 Vdc, IC = −100 Adc, RS = 1.0 k, f = 1.0 kHz | 2 |
| Delay Time | td |  |  | 35 | ns | TA = 25°C; VCC = −3.0 Vdc, VBE = 0.5 Vdc | 2 |
| Rise Time | tr |  |  | 35 | ns | TA = 25°C; IC = −10 mAdc, IB1 = −1.0 mAdc | 2 |
| Storage Time | ts |  |  | 225 | ns | TA = 25°C; VCC = −3.0 Vdc, IC = −10 mAdc | 2 |
| Fall Time | tf |  |  | 75 | ns | TA = 25°C; IB1 = IB2 = −1.0 mAdc | 2 |

## CAD (KiCad official)

- Symbol: `MBT3906DW1T1G`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `mbt3906dw1t1g-etched.step` / `mbt3906dw1t1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mbt3906dw1t1g.step` / `mbt3906dw1t1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586204667353444352) (6 pp, sha256 `ed7bb8fc90aa1e4c`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mbt3906dw1t1g-datasheet.pdf)