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MBT3906DW1T1G

Public Made by Adom

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onsemi Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Datasheet

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Contents

README

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MBT3906DW1T1G

onsemi · Bipolar (BJT) · SOT-363

MBT3906DW1T1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E2 passive Emitter of transistor Q2 (PNP, VCEO −40 Vdc, IC −200 mAdc max).
2 B2 input Base of transistor Q2 (PNP, VEBO −5.0 Vdc max).
3 C1 passive Collector of transistor Q1 (PNP, VCBO −40 Vdc, IC −200 mAdc max).
4 E1 passive Emitter of transistor Q1 (PNP, VCEO −40 Vdc, IC −200 mAdc max).
5 B1 input Base of transistor Q1 (PNP, VEBO −5.0 Vdc max).
6 C2 passive Collector of transistor Q2 (PNP, VCBO −40 Vdc, IC −200 mAdc max).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Emitter Voltage VCEO -40 Vdc 1
Collector−Base Voltage VCBO -40 Vdc 1
Emitter−Base Voltage VEBO -5 Vdc 1
Collector Current − Continuous IC -200 mAdc 1
Total Package Dissipation PD 150 mW TA = 25°C (Note 1) 1
Thermal Resistance, Junction−to−Ambient RJA 833 °C/W 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Collector−Emitter Breakdown Voltage V(BR)CEO -40 Vdc TA = 25°C; Note 2 2
Collector−Base Breakdown Voltage V(BR)CBO -40 Vdc TA = 25°C 2
Emitter−Base Breakdown Voltage V(BR)EBO -5 Vdc TA = 25°C 2
Base Cutoff Current IBL -50 nAdc TA = 25°C 2
Collector Cutoff Current ICEX -50 nAdc TA = 25°C 2
DC Current Gain (IC = −0.1 mAdc, VCE = −1.0 Vdc) hFE 60 TA = 25°C; IC = −0.1 mAdc, VCE = −1.0 Vdc 2
DC Current Gain (IC = −1.0 mAdc, VCE = −1.0 Vdc) hFE 80 TA = 25°C; IC = −1.0 mAdc, VCE = −1.0 Vdc 2
DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) hFE 100 300 TA = 25°C; IC = −10 mAdc, VCE = −1.0 Vdc 2
DC Current Gain (IC = −50 mAdc, VCE = −1.0 Vdc) hFE 60 TA = 25°C; IC = −50 mAdc, VCE = −1.0 Vdc 2
DC Current Gain (IC = −100 mAdc, VCE = −1.0 Vdc) hFE 30 TA = 25°C; IC = −100 mAdc, VCE = −1.0 Vdc 2
Collector−Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) VCE(sat) -0.25 Vdc TA = 25°C; IC = −10 mAdc, IB = −1.0 mAdc 2
Collector−Emitter Saturation Voltage (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) -0.4 Vdc TA = 25°C; IC = −50 mAdc, IB = −5.0 mAdc 2
Base−Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) VBE(sat) -0.65 -0.85 Vdc TA = 25°C; IC = −10 mAdc, IB = −1.0 mAdc 2
Base−Emitter Saturation Voltage (IC = −50 mAdc, IB = −5.0 mAdc) VBE(sat) -0.95 Vdc TA = 25°C; IC = −50 mAdc, IB = −5.0 mAdc 2
Current−Gain − Bandwidth Product fT 250 MHz TA = 25°C 2
Output Capacitance Cobo 4.5 pF TA = 25°C 2
Input Capacitance Cibo 10 pF TA = 25°C 2
Input Impedance hie 2 12 k TA = 25°C; VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz 2
Voltage Feedback Ratio hre 0.1 10 X 10−4 TA = 25°C; VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz 2
Small−Signal Current Gain hfe 100 400 TA = 25°C; VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz 2
Output Admittance hoe 3 60 mhos TA = 25°C; VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz 2
Noise Figure NF 4 dB TA = 25°C; VCE = −5.0 Vdc, IC = −100 Adc, RS = 1.0 k, f = 1.0 kHz 2
Delay Time td 35 ns TA = 25°C; VCC = −3.0 Vdc, VBE = 0.5 Vdc 2
Rise Time tr 35 ns TA = 25°C; IC = −10 mAdc, IB1 = −1.0 mAdc 2
Storage Time ts 225 ns TA = 25°C; VCC = −3.0 Vdc, IC = −10 mAdc 2
Fall Time tf 75 ns TA = 25°C; IB1 = IB2 = −1.0 mAdc 2

CAD (KiCad official)

  • Symbol: MBT3906DW1T1G
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mbt3906dw1t1g-etched.step / mbt3906dw1t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mbt3906dw1t1g.step / mbt3906dw1t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 ed7bb8fc90aa1e4c, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF