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Ray Publish 0.1.0 2643b29 10d ago

MBRF1080CTL

SMC Sangdest Microelectronicstronic Nanjing · Schottky Diodes · ITO-220AB-3

MBRF1080CTL from SMC Sangdest Microelectronicstronic Nanjing, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of the first Schottky diode leg, rated 5 A average per leg and 80 V VRRM.
2 CATHODE passive Common cathode (center tap) of both Schottky legs, rated 10 A per device and 80 V VR.
3 A2 passive Anode of the second Schottky diode leg, rated 5 A average per leg and 80 V VRRM.

Key specifications

Parameter Value
Manufacturer SMC Sangdest Microelectronicstronic Nanjing
Package ITO-220AB-3
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Junction Temperature TJ -55 150 C 2
Storage Temperature Tstg -55 150 C 2
Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage VRRM, VRWM, VR 80 V 1
Average Rectified Forward Current (Per Leg) IF (AV) 5 A 50% duty cycle @Tc=133°C, rectangular wave form, Per Leg 1
Average Rectified Forward Current (Per Device) IF (AV) 10 A 50% duty cycle @Tc=133°C, rectangular wave form, Per Device 1
Peak One Cycle Non-Repetitive Surge Current (Per Leg) IFSM 125 A 8.3ms, Half Sine pulse 1
Forward Voltage Drop (Per Leg) VF1 0.7 0.75 V @ 5A, Pulse, TJ = 25 C 1
Forward Voltage Drop (Per Leg) VF2 0.59 0.64 V @ 5A, Pulse, TJ = 125 C 1
Reverse Current at DC condition (Per Leg) IR1 0.06 1 mA @VR = rated VR, TJ = 25 C 1
Reverse Current at DC condition (Per Leg) IR2 11 30 mA @VR = rated VR, TJ = 125 C 1
Junction Capacitance (Per Leg) CT 120 220 pF @VR = 5V, TC = 25 C, fSIG = 1MHz 1
RSM Isolation Voltage (clip mounting, epoxy body away from heatsink edge) VISO 4500 V t = 1.0 second, R.H. <= 30%, TA = 25 C; clip mounting, epoxy body away from heatsink edge by more than 0.110 in along lead direction 1
RSM Isolation Voltage (clip mounting, epoxy body inside heatsink) VISO 3500 V t = 1.0 second, R.H. <= 30%, TA = 25 C; clip mounting, epoxy body inside the heatsink 1
RSM Isolation Voltage (screw mounting, epoxy body inside heatsink) VISO 1500 V t = 1.0 second, R.H. <= 30%, TA = 25 C; screw mounting, epoxy body inside the heatsink 1
Voltage Rate of Change dv/dt 10000 V/s 1
Series Inductance (Per Leg) LS 8 nH Measured lead to lead 5 mm from package body 1
Typical Thermal Resistance Junction to Case RθJC 3.5 C/W DC operation 2

CAD (KiCad official)

  • Symbol: MBRF1080CTL
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: ITO-220AB-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SMC Sangdest Microelectronicstronic Nanjing datasheet (4 pp, sha256 845975bcdf2fe789, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF