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MBRF1080CTL

SMC Sangdest Microelectronicstronic Nanjing · Schottky Diodes · ITO-220AB-3

MBRF1080CTL from SMC Sangdest Microelectronicstronic Nanjing, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	A1	passive	Anode of the first Schottky diode leg, rated 5 A average per leg and 80 V VRRM.
2	CATHODE	passive	Common cathode (center tap) of both Schottky legs, rated 10 A per device and 80 V VR.
3	A2	passive	Anode of the second Schottky diode leg, rated 5 A average per leg and 80 V VRRM.

Key specifications

Parameter	Value
Manufacturer	SMC Sangdest Microelectronicstronic Nanjing
Package	ITO-220AB-3
Category	Diodes
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Junction Temperature	TJ	-55		150	C		2
Storage Temperature	Tstg	-55		150	C		2
Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage	VRRM, VRWM, VR			80	V		1
Average Rectified Forward Current (Per Leg)	IF (AV)			5	A	50% duty cycle @Tc=133°C, rectangular wave form, Per Leg	1
Average Rectified Forward Current (Per Device)	IF (AV)			10	A	50% duty cycle @Tc=133°C, rectangular wave form, Per Device	1
Peak One Cycle Non-Repetitive Surge Current (Per Leg)	IFSM			125	A	8.3ms, Half Sine pulse	1
Forward Voltage Drop (Per Leg)	VF1		0.7	0.75	V	@ 5A, Pulse, TJ = 25 C	1
Forward Voltage Drop (Per Leg)	VF2		0.59	0.64	V	@ 5A, Pulse, TJ = 125 C	1
Reverse Current at DC condition (Per Leg)	IR1		0.06	1	mA	@VR = rated VR, TJ = 25 C	1
Reverse Current at DC condition (Per Leg)	IR2		11	30	mA	@VR = rated VR, TJ = 125 C	1
Junction Capacitance (Per Leg)	CT		120	220	pF	@VR = 5V, TC = 25 C, fSIG = 1MHz	1
RSM Isolation Voltage (clip mounting, epoxy body away from heatsink edge)	VISO			4500	V	t = 1.0 second, R.H. <= 30%, TA = 25 C; clip mounting, epoxy body away from heatsink edge by more than 0.110 in along lead direction	1
RSM Isolation Voltage (clip mounting, epoxy body inside heatsink)	VISO			3500	V	t = 1.0 second, R.H. <= 30%, TA = 25 C; clip mounting, epoxy body inside the heatsink	1
RSM Isolation Voltage (screw mounting, epoxy body inside heatsink)	VISO			1500	V	t = 1.0 second, R.H. <= 30%, TA = 25 C; screw mounting, epoxy body inside the heatsink	1
Voltage Rate of Change	dv/dt			10000	V/s		1
Series Inductance (Per Leg)	LS		8		nH	Measured lead to lead 5 mm from package body	1
Typical Thermal Resistance Junction to Case	RθJC		3.5		C/W	DC operation	2

CAD (KiCad official)

Symbol: MBRF1080CTL
Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
3D model: ITO-220AB-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: SMC Sangdest Microelectronicstronic Nanjing datasheet (4 pp, sha256 845975bcdf2fe789, retrieved 2026-10-15, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF