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MBRF10150CTR
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SMC Sangdest Microelectronicstronic Nanjing Schottky Diodes, TO-220AB-3. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
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MBRF10150CTR
SMC Sangdest Microelectronicstronic Nanjing · Schottky Diodes · TO-220AB-3
MBRF10150CTR from SMC Sangdest Microelectronicstronic Nanjing, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C1 | passive | Cathode of diode leg 1 in the common-anode MBRF10150CTR; each leg is rated 5 A average and 150 V VRRM. |
| 2 | CA | passive | Common anode of both diode legs (center tap) in the MBRF10150CTR; total 10 A per device average forward current. |
| 3 | C2 | passive | Cathode of diode leg 2 in the common-anode MBRF10150CTR; each leg is rated 5 A average and 150 V VRRM. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SMC Sangdest Microelectronicstronic Nanjing |
| Package | TO-220AB-3 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Junction Temperature | TJ | -55 | 150 | C | 2 | ||
| Storage Temperature | Tstg | -55 | 150 | C | 2 | ||
| Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage | VRRM VRWM VR | 150 | V | 1 | |||
| Average Rectified Forward Current (per leg) | IF (AV) | 5 | A | 50% duty cycle @Tc=100°C, rectangular wave form | 1 | ||
| Average Rectified Forward Current (per device) | IF (AV) | 10 | A | 50% duty cycle @Tc=100°C, rectangular wave form | 1 | ||
| Peak One Cycle Non-Repetitive Surge Current (per leg) | IFSM | 138 | A | 8.3ms, Half Sine pulse | 1 | ||
| Forward Voltage Drop (per leg) | VF1 | 0.82 | 0.93 | V | @5A, Pulse (width < 300 µs, duty cycle < 2%), TJ = 25 C | 1 | |
| Forward Voltage Drop (per leg) | VF2 | 0.68 | 0.73 | V | @5A, Pulse (width < 300 µs, duty cycle < 2%), TJ = 125 C | 1 | |
| Reverse Current (per leg) | IR1 | 0.002 | 1 | mA | @VR = rated VR, TJ = 25 C | 1 | |
| Reverse Current (per leg) | IR2 | 1.5 | 7 | mA | @VR = rated VR, TJ = 125 C | 1 | |
| Junction Capacitance (per leg) | CT | 110 | 200 | pF | @VR = 5V, TC = 25 C, fSIG = 1MHz | 1 | |
| Voltage Rate of Change | dv/dt | 10000 | V/s | 1 | |||
| RMS Isolation Voltage | VISO | 4500 | V | t = 1.0 second, R.H. <= 30%, TA = 25 C; clip mounting, epoxy body away from heatsink edge by more than 0.110 in along lead direction | 1 | ||
| RMS Isolation Voltage | VISO | 3500 | V | t = 1.0 second, R.H. <= 30%, TA = 25 C; clip mounting, epoxy body inside the heatsink | 1 | ||
| RMS Isolation Voltage | VISO | 1500 | V | t = 1.0 second, R.H. <= 30%, TA = 25 C; screw mounting, epoxy body inside the heatsink | 1 | ||
| Typical Thermal Resistance Junction to Case | RθJC | 4.5 | C/W | DC operation | 2 | ||
| Series Inductance (per leg) | LS | 8 | nH | Measured lead to lead 5 mm from package body | 1 |
CAD (KiCad official)
- Symbol:
MBRF10150CTR - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files:
mbrf10150ctr-etched.step/mbrf10150ctr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mbrf10150ctr.step/mbrf10150ctr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SMC Sangdest Microelectronicstronic Nanjing datasheet (4 pp, sha256
b5ebbf8e52032906, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MBRF10150CTR
**SMC Sangdest Microelectronicstronic Nanjing** · Schottky Diodes · TO-220AB-3
MBRF10150CTR from SMC Sangdest Microelectronicstronic Nanjing, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C1 | passive | Cathode of diode leg 1 in the common-anode MBRF10150CTR; each leg is rated 5 A average and 150 V VRRM. |
| 2 | CA | passive | Common anode of both diode legs (center tap) in the MBRF10150CTR; total 10 A per device average forward current. |
| 3 | C2 | passive | Cathode of diode leg 2 in the common-anode MBRF10150CTR; each leg is rated 5 A average and 150 V VRRM. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SMC Sangdest Microelectronicstronic Nanjing |
| Package | TO-220AB-3 |
| Category | Diodes |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Junction Temperature | TJ | -55 | | 150 | C | | 2 |
| Storage Temperature | Tstg | -55 | | 150 | C | | 2 |
| Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage | VRRM VRWM VR | | | 150 | V | | 1 |
| Average Rectified Forward Current (per leg) | IF (AV) | | | 5 | A | 50% duty cycle @Tc=100°C, rectangular wave form | 1 |
| Average Rectified Forward Current (per device) | IF (AV) | | | 10 | A | 50% duty cycle @Tc=100°C, rectangular wave form | 1 |
| Peak One Cycle Non-Repetitive Surge Current (per leg) | IFSM | | | 138 | A | 8.3ms, Half Sine pulse | 1 |
| Forward Voltage Drop (per leg) | VF1 | | 0.82 | 0.93 | V | @5A, Pulse (width < 300 µs, duty cycle < 2%), TJ = 25 C | 1 |
| Forward Voltage Drop (per leg) | VF2 | | 0.68 | 0.73 | V | @5A, Pulse (width < 300 µs, duty cycle < 2%), TJ = 125 C | 1 |
| Reverse Current (per leg) | IR1 | | 0.002 | 1 | mA | @VR = rated VR, TJ = 25 C | 1 |
| Reverse Current (per leg) | IR2 | | 1.5 | 7 | mA | @VR = rated VR, TJ = 125 C | 1 |
| Junction Capacitance (per leg) | CT | | 110 | 200 | pF | @VR = 5V, TC = 25 C, fSIG = 1MHz | 1 |
| Voltage Rate of Change | dv/dt | | | 10000 | V/s | | 1 |
| RMS Isolation Voltage | VISO | | | 4500 | V | t = 1.0 second, R.H. <= 30%, TA = 25 C; clip mounting, epoxy body away from heatsink edge by more than 0.110 in along lead direction | 1 |
| RMS Isolation Voltage | VISO | | | 3500 | V | t = 1.0 second, R.H. <= 30%, TA = 25 C; clip mounting, epoxy body inside the heatsink | 1 |
| RMS Isolation Voltage | VISO | | | 1500 | V | t = 1.0 second, R.H. <= 30%, TA = 25 C; screw mounting, epoxy body inside the heatsink | 1 |
| Typical Thermal Resistance Junction to Case | RθJC | | 4.5 | | C/W | DC operation | 2 |
| Series Inductance (per leg) | LS | | 8 | | nH | Measured lead to lead 5 mm from package body | 1 |
## CAD (KiCad official)
- Symbol: `MBRF10150CTR`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files: `mbrf10150ctr-etched.step` / `mbrf10150ctr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mbrf10150ctr.step` / `mbrf10150ctr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [SMC Sangdest Microelectronicstronic Nanjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588896480870875136) (4 pp, sha256 `b5ebbf8e52032906`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mbrf10150ctr-datasheet.pdf)