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MBRF10150CTR

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SMC Sangdest Microelectronicstronic Nanjing Schottky Diodes, TO-220AB-3. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.

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MBRF10150CTR

SMC Sangdest Microelectronicstronic Nanjing · Schottky Diodes · TO-220AB-3

MBRF10150CTR from SMC Sangdest Microelectronicstronic Nanjing, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C1 passive Cathode of diode leg 1 in the common-anode MBRF10150CTR; each leg is rated 5 A average and 150 V VRRM.
2 CA passive Common anode of both diode legs (center tap) in the MBRF10150CTR; total 10 A per device average forward current.
3 C2 passive Cathode of diode leg 2 in the common-anode MBRF10150CTR; each leg is rated 5 A average and 150 V VRRM.

Key specifications

Parameter Value
Manufacturer SMC Sangdest Microelectronicstronic Nanjing
Package TO-220AB-3
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Junction Temperature TJ -55 150 C 2
Storage Temperature Tstg -55 150 C 2
Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage VRRM VRWM VR 150 V 1
Average Rectified Forward Current (per leg) IF (AV) 5 A 50% duty cycle @Tc=100°C, rectangular wave form 1
Average Rectified Forward Current (per device) IF (AV) 10 A 50% duty cycle @Tc=100°C, rectangular wave form 1
Peak One Cycle Non-Repetitive Surge Current (per leg) IFSM 138 A 8.3ms, Half Sine pulse 1
Forward Voltage Drop (per leg) VF1 0.82 0.93 V @5A, Pulse (width < 300 µs, duty cycle < 2%), TJ = 25 C 1
Forward Voltage Drop (per leg) VF2 0.68 0.73 V @5A, Pulse (width < 300 µs, duty cycle < 2%), TJ = 125 C 1
Reverse Current (per leg) IR1 0.002 1 mA @VR = rated VR, TJ = 25 C 1
Reverse Current (per leg) IR2 1.5 7 mA @VR = rated VR, TJ = 125 C 1
Junction Capacitance (per leg) CT 110 200 pF @VR = 5V, TC = 25 C, fSIG = 1MHz 1
Voltage Rate of Change dv/dt 10000 V/s 1
RMS Isolation Voltage VISO 4500 V t = 1.0 second, R.H. <= 30%, TA = 25 C; clip mounting, epoxy body away from heatsink edge by more than 0.110 in along lead direction 1
RMS Isolation Voltage VISO 3500 V t = 1.0 second, R.H. <= 30%, TA = 25 C; clip mounting, epoxy body inside the heatsink 1
RMS Isolation Voltage VISO 1500 V t = 1.0 second, R.H. <= 30%, TA = 25 C; screw mounting, epoxy body inside the heatsink 1
Typical Thermal Resistance Junction to Case RθJC 4.5 C/W DC operation 2
Series Inductance (per leg) LS 8 nH Measured lead to lead 5 mm from package body 1

CAD (KiCad official)

  • Symbol: MBRF10150CTR
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB-3 (KiCad packages3D, STEP)
  • 3D model files: mbrf10150ctr-etched.step / mbrf10150ctr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mbrf10150ctr.step / mbrf10150ctr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SMC Sangdest Microelectronicstronic Nanjing datasheet (4 pp, sha256 b5ebbf8e52032906, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF