component
MBRD10100CTTR
Public Made by Adomby adom
SMC Sangdest Microelectronicstronic Nanjing Schottky Diodes, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MBRD10100CTTR
SMC Sangdest Microelectronicstronic Nanjing · Schottky Diodes · TO-252-2(DPAK)
MBRD10100CTTR from SMC Sangdest Microelectronicstronic Nanjing, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first Schottky diode leg, rated 5 A average forward current per leg and 100 V maximum reverse voltage. |
| 2 | CATHODE | passive | Common cathode (center tap) of both diode legs, also connected to the base/tab, with 10 A average forward current per device and 100 V VRRM. |
| 3 | A2 | passive | Anode of the second Schottky diode leg, rated 5 A average forward current per leg and 100 V maximum reverse voltage. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SMC Sangdest Microelectronicstronic Nanjing |
| Package | TO-252-2(DPAK) |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 100 | V | 1 | |||
| Working Peak Reverse Voltage | VRWM | 100 | V | 1 | |||
| DC Blocking Voltage | VR | 100 | V | 1 | |||
| Average Rectified Forward Current (peg leg) | IF(AV) | 5 | A | 50% duty cycle @TC = 131°C, rectangular wave form | 1 | ||
| Average Rectified Forward Current (peg device) | IF(AV) | 10 | A | 50% duty cycle @TC = 131°C, rectangular wave form | 1 | ||
| Peak One Cycle Non-Repetitive Surge Current (peg leg) | IFSM | 84 | A | 8.3 ms, half Sine pulse | 1 | ||
| Forward Voltage Drop (per leg) | VF1 | 0.83 | 0.85 | V | @ 5A, Pulse, TJ = 25 C | 1 | |
| Forward Voltage Drop (per leg) | VF2 | 0.71 | 0.75 | V | @ 5A, Pulse, TJ = 125 C | 1 | |
| Reverse Current (per leg) | IR1 | 0.0006 | 1 | mA | @VR = rated VR, TJ = 25 C | 1 | |
| Reverse Current (per leg) | IR2 | 0.8 | 15 | mA | @VR = rated VR, TJ = 125 C | 1 | |
| Junction Capacitance (per leg) | CT | 120 | 300 | pF | @VR = 5V, TC = 25 C, fSIG = 1MHz | 1 | |
| Series Inductance (per leg) | LS | 8 | 8 | nH | Measured lead to lead 5 mm from package body | 1 | |
| Voltage Rate of Change | dv/dt | 10000 | V/s | 1 | |||
| Junction Temperature | TJ | -55 | 200 | C | 2 | ||
| Storage Temperature | Tstg | -55 | 200 | C | 2 | ||
| Typical Thermal Resistance Junction to Case | RJC | 6 | C/W | 2 |
CAD (KiCad official)
- Symbol:
MBRD10100CTTR - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files:
mbrd10100cttr-etched.step/mbrd10100cttr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mbrd10100cttr.step/mbrd10100cttr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SMC Sangdest Microelectronicstronic Nanjing datasheet (4 pp, sha256
ab10f5423e9ad3fe, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MBRD10100CTTR
**SMC Sangdest Microelectronicstronic Nanjing** · Schottky Diodes · TO-252-2(DPAK)
MBRD10100CTTR from SMC Sangdest Microelectronicstronic Nanjing, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first Schottky diode leg, rated 5 A average forward current per leg and 100 V maximum reverse voltage. |
| 2 | CATHODE | passive | Common cathode (center tap) of both diode legs, also connected to the base/tab, with 10 A average forward current per device and 100 V VRRM. |
| 3 | A2 | passive | Anode of the second Schottky diode leg, rated 5 A average forward current per leg and 100 V maximum reverse voltage. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SMC Sangdest Microelectronicstronic Nanjing |
| Package | TO-252-2(DPAK) |
| Category | Diodes |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | | | 100 | V | | 1 |
| Working Peak Reverse Voltage | VRWM | | | 100 | V | | 1 |
| DC Blocking Voltage | VR | | | 100 | V | | 1 |
| Average Rectified Forward Current (peg leg) | IF(AV) | | | 5 | A | 50% duty cycle @TC = 131°C, rectangular wave form | 1 |
| Average Rectified Forward Current (peg device) | IF(AV) | | | 10 | A | 50% duty cycle @TC = 131°C, rectangular wave form | 1 |
| Peak One Cycle Non-Repetitive Surge Current (peg leg) | IFSM | | | 84 | A | 8.3 ms, half Sine pulse | 1 |
| Forward Voltage Drop (per leg) | VF1 | | 0.83 | 0.85 | V | @ 5A, Pulse, TJ = 25 C | 1 |
| Forward Voltage Drop (per leg) | VF2 | | 0.71 | 0.75 | V | @ 5A, Pulse, TJ = 125 C | 1 |
| Reverse Current (per leg) | IR1 | | 0.0006 | 1 | mA | @VR = rated VR, TJ = 25 C | 1 |
| Reverse Current (per leg) | IR2 | | 0.8 | 15 | mA | @VR = rated VR, TJ = 125 C | 1 |
| Junction Capacitance (per leg) | CT | | 120 | 300 | pF | @VR = 5V, TC = 25 C, fSIG = 1MHz | 1 |
| Series Inductance (per leg) | LS | | 8 | 8 | nH | Measured lead to lead 5 mm from package body | 1 |
| Voltage Rate of Change | dv/dt | | | 10000 | V/s | | 1 |
| Junction Temperature | TJ | -55 | | 200 | C | | 2 |
| Storage Temperature | Tstg | -55 | | 200 | C | | 2 |
| Typical Thermal Resistance Junction to Case | RJC | | 6 | | C/W | | 2 |
## CAD (KiCad official)
- Symbol: `MBRD10100CTTR`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files: `mbrd10100cttr-etched.step` / `mbrd10100cttr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mbrd10100cttr.step` / `mbrd10100cttr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [SMC Sangdest Microelectronicstronic Nanjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586203466116550656) (4 pp, sha256 `ab10f5423e9ad3fe`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mbrd10100cttr-datasheet.pdf)