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MBRA2H100T3G

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onsemi Schottky Barrier Diodes (SBD), SMA(DO-214AC). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MBRA2H100T3G

onsemi · Schottky Barrier Diodes (SBD) · SMA(DO-214AC)

MBRA2H100T3G from onsemi, in a SMA(DO-214AC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CATHODE passive Cathode terminal, marked by the polarity band on the package; part is rated for 100 V VRRM/VR and 2.0 A average forward current.
2 ANODE passive Anode terminal of the Schottky rectifier; forward voltage is 0.79 V max at 2.0 A and TJ = 25°C.

Key specifications

Parameter Value
Manufacturer onsemi
Package SMA(DO-214AC)
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage VRRM, VRWM, VR 100 V 2
Average Rectified Forward Current IO 2 A TL = 150°C 2
Non-Repetitive Peak Surge Current IFSM 130 A Surge applied at rated load conditions, halfwave, single phase, 60 Hz 2
Storage Temperature Range Tstg -65 175 °C 2
Operating Junction Temperature TJ -65 175 °C dPD/dTJ < 1/RθJA 2
Maximum Instantaneous Forward Voltage vF 0.79 V iF = 2.0 A, TJ = 25°C, pulse width ≤ 380 µs, duty cycle ≤ 2.0% 2
Maximum Instantaneous Forward Voltage vF 0.65 V iF = 2.0 A, TJ = 125°C, pulse width ≤ 380 µs, duty cycle ≤ 2.0% 2
Maximum Instantaneous Reverse Current IR 0.008 mA VR = 100 V, TJ = 25°C, pulse width ≤ 380 µs, duty cycle ≤ 2.0% 2
Maximum Instantaneous Reverse Current IR 1.5 mA VR = 100 V, TJ = 125°C, pulse width ≤ 380 µs, duty cycle ≤ 2.0% 2
Thermal Resistance, Junction-to-Lead RθJL 14 °C/W Mounted with 700 mm square copper pad, 1 oz FR4 board (Note 2) 2
Thermal Resistance, Junction-to-Ambient RθJA 75 °C/W Mounted with 700 mm square copper pad, 1 oz FR4 board (Note 2) 2
Thermal Resistance, Junction-to-Ambient RθJA 275 °C/W Mounted with minimum recommended pad size, 1 oz FR4 board (Note 3) 2

CAD (KiCad official)

  • Symbol: MBRA2H100T3G
  • Footprint: Diode_SMD:D_SMA
  • 3D model: SMA(DO-214AC) (KiCad packages3D, STEP)
  • 3D model files: mbra2h100t3g-etched.step / mbra2h100t3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mbra2h100t3g.step / mbra2h100t3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 57bceb5a0fa46b16, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF