component
MBRA2H100T3G
Public Made by Adomby adom
onsemi Schottky Barrier Diodes (SBD), SMA(DO-214AC). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 1d ago |
| viewers | 1d ago |
| mbra2h100t3g-etched.glb | 1d ago |
| mbra2h100t3g-etched.step | 1d ago |
| mbra2h100t3g-hero.glb | 1d ago |
| mbra2h100t3g-hero.overlay.json | 1d ago |
| mbra2h100t3g.glb | 1d ago |
| mbra2h100t3g.kicad_mod | 1d ago |
| mbra2h100t3g.kicad_sym | 1d ago |
| mbra2h100t3g.lbr | 1d ago |
| mbra2h100t3g.step | 1d ago |
| package.json | 1d ago |
| page.json | 1d ago |
| README.md | 1d ago |
MBRA2H100T3G
onsemi · Schottky Barrier Diodes (SBD) · SMA(DO-214AC)
MBRA2H100T3G from onsemi, in a SMA(DO-214AC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CATHODE | passive | Cathode terminal, marked by the polarity band on the package; part is rated for 100 V VRRM/VR and 2.0 A average forward current. |
| 2 | ANODE | passive | Anode terminal of the Schottky rectifier; forward voltage is 0.79 V max at 2.0 A and TJ = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SMA(DO-214AC) |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage | VRRM, VRWM, VR | 100 | V | 2 | |||
| Average Rectified Forward Current | IO | 2 | A | TL = 150°C | 2 | ||
| Non-Repetitive Peak Surge Current | IFSM | 130 | A | Surge applied at rated load conditions, halfwave, single phase, 60 Hz | 2 | ||
| Storage Temperature Range | Tstg | -65 | 175 | °C | 2 | ||
| Operating Junction Temperature | TJ | -65 | 175 | °C | dPD/dTJ < 1/RθJA | 2 | |
| Maximum Instantaneous Forward Voltage | vF | 0.79 | V | iF = 2.0 A, TJ = 25°C, pulse width ≤ 380 µs, duty cycle ≤ 2.0% | 2 | ||
| Maximum Instantaneous Forward Voltage | vF | 0.65 | V | iF = 2.0 A, TJ = 125°C, pulse width ≤ 380 µs, duty cycle ≤ 2.0% | 2 | ||
| Maximum Instantaneous Reverse Current | IR | 0.008 | mA | VR = 100 V, TJ = 25°C, pulse width ≤ 380 µs, duty cycle ≤ 2.0% | 2 | ||
| Maximum Instantaneous Reverse Current | IR | 1.5 | mA | VR = 100 V, TJ = 125°C, pulse width ≤ 380 µs, duty cycle ≤ 2.0% | 2 | ||
| Thermal Resistance, Junction-to-Lead | RθJL | 14 | °C/W | Mounted with 700 mm square copper pad, 1 oz FR4 board (Note 2) | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 75 | °C/W | Mounted with 700 mm square copper pad, 1 oz FR4 board (Note 2) | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 275 | °C/W | Mounted with minimum recommended pad size, 1 oz FR4 board (Note 3) | 2 |
CAD (KiCad official)
- Symbol:
MBRA2H100T3G - Footprint:
Diode_SMD:D_SMA - 3D model: SMA(DO-214AC) (KiCad packages3D, STEP)
- 3D model files:
mbra2h100t3g-etched.step/mbra2h100t3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mbra2h100t3g.step/mbra2h100t3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
57bceb5a0fa46b16, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).