component
LWS6T7AM
Public Made by Adomby adom
Lewa Micro MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| lws6t7am-etched.glb | 23d ago |
| lws6t7am-etched.step | 23d ago |
| lws6t7am-hero.glb | 23d ago |
| lws6t7am-hero.overlay.json | 23d ago |
| lws6t7am.glb | 23d ago |
| lws6t7am.kicad_mod | 23d ago |
| lws6t7am.kicad_sym | 23d ago |
| lws6t7am.lbr | 23d ago |
| lws6t7am.step | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
LWS6T7AM
Lewa Micro · MOSFETs · SOT-23
LWS6T7AM from Lewa Micro, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for a gate-to-source voltage of ±20 V maximum. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous drain current is -2.5 A at TA=25 °C and drain-to-source voltage is -60 V. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated -60 V drain-to-source, -2.5 A continuous and -10 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Lewa Micro |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -60 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -2.5 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | -1.6 | A | TA=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -10 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Power Dissipation | PD | 1.5 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum Temperature for Soldering | TL | 260 | ℃ | 1 | |||
| Thermal Resistance, Junction-to-Ambient | θJA | 88 | ℃/W | Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection | 1 | ||
| Drain to Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS=0V, ID=-250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | -1 | µA | VDS=-60V, VGS=0V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | -1.1 | -1.6 | -2.1 | V | VDS=VGS, ID=-250µA | 2 |
| Drain-to-Source On-Resistance | RDS(ON) | 108 | 150 | mΩ | VGS=-10V, ID=-2.5A | 2 | |
| Drain-to-Source On-Resistance | RDS(ON) | 100 | 110 | mΩ | VGS=-4.5V, ID=-2.0A | 2 | |
| Diode Forward Current | IS | -2.5 | A | TA=25 °C | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | IS=-2.5A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
LWS6T7AM - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lws6t7am-etched.step/lws6t7am-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lws6t7am.step/lws6t7am.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Lewa Micro datasheet (10 pp, sha256
ea7fb5afb316d563, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).