# LWS60110A4

**Lewa Micro** · MOSFETs · TO-252

LWS60110A4 from Lewa Micro, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated ±20 V, with a typical gate threshold of -1.6 V (-1.1 V min, -2.1 V max) at ID=-250µA. |
| 2 | D | passive | Drain (also the exposed tab); drain-to-source voltage is rated -60 V, with continuous drain current of -12 A at TC=25℃ and pulsed drain current of -48 A. |
| 3 | S | passive | Source of the P-channel MOSFET, with the body diode running from drain to source; continuous diode forward current is -12 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Lewa Micro |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -60 |  |  | V |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID | -12 |  |  | A | TC=25 °C | 1 |
| Continuous Drain Current | ID | -7.6 |  |  | A | TC=100 °C | 1 |
| Pulsed Drain Current | IDM | -48 |  |  | A |  | 1 |
| Power Dissipation | PD |  |  | 30 | W |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 11 | mJ | VDD=-30V, L=0.1mH, RG=25Ω, Starting Tj=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Temperature for Soldering | TL |  |  | 260 | °C |  | 1 |
| Drain to Source Breakdown Voltage | VDSS | -60 |  |  | V | VGS=0V, ID=-250µA | 2 |
| Drain to Source Leakage Current | IDSS |  |  | -1 | µA | VDS=-60V, VGS=0V | 2 |
| Gate to Source Reverse Leakage | IGSS(R) |  |  | -100 | nA | VGS=-20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | -1.1 | -1.6 | -2.1 | V | VDS=VGS, ID=-250µA | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | IS=-5.0A, VGS=0V | 2 |
| Diode Forward Current | IS | -12 |  |  | A | TC =25 °C | 2 |
| Diode Pulse Current | ISM | -48 |  |  | A |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  | 40 |  | ℃/W | Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  | 4.2 |  | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `LWS60110A4`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `lws60110a4-etched.step` / `lws60110a4-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lws60110a4.step` / `lws60110a4.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Lewa Micro datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758137511459860480) (10 pp, sha256 `217dd721e6cdf822`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/lws60110a4-datasheet.pdf)