component
LWS60110A4
Public Made by Adomby adom
Lewa Micro MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownLWS60110A4
Lewa Micro · MOSFETs · TO-252
LWS60110A4 from Lewa Micro, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated ±20 V, with a typical gate threshold of -1.6 V (-1.1 V min, -2.1 V max) at ID=-250µA. |
| 2 | D | passive | Drain (also the exposed tab); drain-to-source voltage is rated -60 V, with continuous drain current of -12 A at TC=25℃ and pulsed drain current of -48 A. |
| 3 | S | passive | Source of the P-channel MOSFET, with the body diode running from drain to source; continuous diode forward current is -12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Lewa Micro |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -60 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -12 | A | TC=25 °C | 1 | ||
| Continuous Drain Current | ID | -7.6 | A | TC=100 °C | 1 | ||
| Pulsed Drain Current | IDM | -48 | A | 1 | |||
| Power Dissipation | PD | 30 | W | 1 | |||
| Single pulse avalanche energy | EAS | 11 | mJ | VDD=-30V, L=0.1mH, RG=25Ω, Starting Tj=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Temperature for Soldering | TL | 260 | °C | 1 | |||
| Drain to Source Breakdown Voltage | VDSS | -60 | V | VGS=0V, ID=-250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | -1 | µA | VDS=-60V, VGS=0V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | -1.1 | -1.6 | -2.1 | V | VDS=VGS, ID=-250µA | 2 |
| Diode Forward Voltage | VSD | -1.2 | V | IS=-5.0A, VGS=0V | 2 | ||
| Diode Forward Current | IS | -12 | A | TC =25 °C | 2 | ||
| Diode Pulse Current | ISM | -48 | A | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 40 | ℃/W | Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 4.2 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
LWS60110A4 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
lws60110a4-etched.step/lws60110a4-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lws60110a4.step/lws60110a4.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Lewa Micro datasheet (10 pp, sha256
217dd721e6cdf822, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).