# LTC7003EMSE#TRPBF

**Analog Devices** · Gate Drivers · MSOP-16-EP

LTC7003EMSE#TRPBF from Analog Devices, in a MSOP-16-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | RUN | input | Run control input: a voltage above 1.21V enables normal operation, forcing it below 0.7V shuts the device down to about 1µA quiescent current, and a resistive divider from the input supply can set the undervoltage lockout. |
| 2 | VIN | power_in | Main supply pin, operating from 3.5V to 60V per the electrical characteristics, with a bypass capacitor of at least 0.1µF to GND. |
| 3 | VCC | power_out | Output of the internal LDO that powers the gate drivers and internal circuitry, to be decoupled to GND with at least 1.0µF low-ESR ceramic, and never to be driven to a voltage greater than VIN. |
| 4 | VCCUV | input | VCC undervoltage lockout reference input, where 0.4V to 1.5V on this pin is multiplied by 7 to set the gate drive UVLO, with short to GND giving 3.5V and open giving 7.0V. |
| 5 | FAULT | output | Open-drain fault output that pulls low once the TIMER pin reaches the 1.3V fault threshold, with a typical pull-down impedance of 200Ω and no release until the overcurrent condition and cooldown period expire. |
| 6 | TIMER | passive | Fault timer input where a capacitor CT from this pin to GND sets the fault warning, fault turn-off and retry periods, and a voltage above 3.5V disables the timer function. |
| 7 | INP | input | CMOS-compatible input referenced to GND that sets the state of TGDN and TGUP, with an internal 1MΩ pull-down to GND that holds TGDN at TS during startup transients. |
| 8 | OVLO | input | Overvoltage lockout input where a voltage above 1.21V pulls TGDN to TS and normal operation resumes below 1.11V, and it should be tied to GND when not used. |
| 9 | ISET | input | Current trip threshold set pin where a resistor to GND sets the peak current threshold, with the voltage internally clamped between 0.4V and 1.5V and divided by 20, and leaving it open selects 30mV ΔVTH. |
| 10 | IMON | output | Current monitor output whose voltage equals the sense voltage multiplied by 20 with a range of 0V to 1.5V referenced to GND. |
| 11 | TGDN | output | High current gate driver pull-down that pulls the external MOSFET gate to TS, and should be tied directly to the MOSFET gate for the fastest turn-off. |
| 12 | TGUP | output | High current gate driver pull-up that drives toward BST, and a series resistor to the external MOSFET gate can be used to limit turn-on inrush current. |
| 13 | TS | power_in | Top (high side) source connection of the external MOSFET, or GND in ground-referenced applications, with an absolute range of -6V to 65V. |
| 14 | BST | power_out | High side bootstrapped supply where an external capacitor of at least 0.1µF connects to TS and the voltage swing is 12V to (VIN + 12V). |
| 15 | SNS- | input | Current sense comparator input connected to the sense resistor through a minimum 100Ω resistor, with the sense resistor placed in series with the external MOSFET drain. |
| 16 | SNS+ | input | Current sense comparator input that should use a Kelvin connection to the sense resistor, with the trip threshold ΔVTH clamped between 20mV and 75mV. |
| 17 | GND | power_in | Exposed pad ground that must be soldered to the PCB for rated electrical and thermal performance. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Analog Devices |
| Package | MSOP-16-EP |
| Category | Motor Driver ICs |
| Pins | 17 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VIN Input Voltage Operating Range | VIN | 3.5 |  | 60 | V |  | 4 |
| TS Operating Voltage Range | TS | 0 |  | 60 | V |  | 4 |
| SNS+/SNS- Input Voltage Range |  | 3.5 |  | 60 | V | Independent of VIN | 4 |
| Input Threshold Voltage, VINP Rising | VIH | 1.7 | 2 | 2.2 | V |  | 5 |
| Input Threshold Voltage, VINP Falling | VIL | 1.3 | 1.6 | 1.8 | V |  | 5 |
| RUN and OVLO Pin Threshold Voltage, Rising |  | 1.16 | 1.21 | 1.26 | V |  | 5 |
| RUN and OVLO Pin Threshold Voltage, Falling |  | 1.05 | 1.1 | 1.15 | V |  | 5 |
| RUN and OVLO Leakage Current |  | -100 | 0 | 100 | nA | VRUN = 1.3V, VOVLO = 1.3V | 5 |
| TIMER Threshold Voltage | VTIMER | 1.25 | 1.3 | 1.35 | V | VTIMER Rising to VFAULT Going Low | 5 |
| TIMER Early Warning Voltage |  | 75 | 100 | 125 | mV | VFAULT Going Low to (TG-TS) Going Low | 5 |
| TIMER Pin Fault Pull-Up Current |  | -115 | -100 | -80 | µA | VTIMER = 1.0V, ISET = OPEN | 5 |
| TIMER Pin Pull-Down Current |  | 2 | 2.5 | 3 | µA | VTIMER = 0.6V, ISET = OPEN, ΔVSNS = 0mV | 5 |
| FAULT Output Low Voltage |  |  | 0.2 | 0.5 | V | IFAULT = 1mA | 5 |
| FAULT Leakage Current |  | -100 | 0 | 100 | nA | VFAULT = 5V | 5 |
| Current Sense Threshold Voltage | ΔVTH | 22 | 30 | 36 | mV | ΔVSNS = (VSNS+, VSNS-), ISET = OPEN | 5 |
| Current Sense Threshold Voltage | ΔVTH | 54 | 60 | 64 | mV | ΔVSNS = (VSNS+, VSNS-), VISET = 1.2V | 5 |
| Current Sense Threshold Voltage | ΔVTH | 15 | 20 | 24 | mV | ΔVSNS = (VSNS+, VSNS-), VISET = 0V | 5 |
| Retry Duty Cycle | D |  | 0.06 | 0.1 | % | ΔVSNS = 200mV, CTIMER = 1nF | 5 |
| ISET and VCCUV Pull-Up Current |  | -11.3 | -10 | -8.7 | µA | VISET = 1.0V, VVCCUV = 1.0V | 5 |
| IMON Output Voltage |  | 1.12 | 1.2 | 1.28 | V | ΔVSNS = 60mV, VTIMER = 0V, VINP = 3.5V | 5 |
| IMON Output Voltage |  | 0.52 | 0.6 | 0.68 | V | ΔVSNS = 30mV, VTIMER = 0V, VINP = 3.5V | 5 |
| Input to Output Propagation Delay, Rising | tPLH |  | 35 | 70 | ns | VINP Rising, CL = 1nF | 4 |
| Input to Output Propagation Delay, Falling | tPHL |  | 35 | 70 | ns | VINP Falling, CL = 1nF | 4 |
| TG Pull-Up Resistance |  |  | 2.2 | 7 | Ω | VIN = VBST = 12V | 4 |
| TG Pull-Down Resistance |  |  | 1 | 4 | Ω | VIN = VBST = 12V | 4 |
| Charge Pump Output Current |  |  | -15 | -30 | µA | VTS = 20V, VBST-TS = 10V | 4 |
| SNS- Current |  | 2 | 4 | 6.5 | µA | VINP = 4V, VRUN = 2V | 4 |
| VIN Supply Voltage | VIN | -0.3 |  | 65 | V |  | 3 |
| BST-TS Voltage | BST-TS | -0.3 |  | 15 | V |  | 3 |
| VCC Voltage | VCC | -0.3 |  | 15 | V |  | 3 |
| BST Voltage | BST | -0.3 |  | 80 | V |  | 3 |
| TS Voltage | TS | -6 |  | 65 | V |  | 3 |
| RUN, SNS+ and SNS- Voltages |  | -0.3 |  | 65 | V |  | 3 |
| SNS+, SNS- Differential Voltage | ΔVSNS | -0.3 |  | 0.3 | V | Continuous | 3 |
| SNS+, SNS- Differential Current |  | -100 |  | 100 | mA | <1msec | 3 |
| INP Voltage | INP | -6 |  | 15 | V |  | 3 |
| TIMER, FAULT Voltages |  | -0.3 |  | 15 | V |  | 3 |
| VCCUV, ISET, IMON, OVLO Voltages |  | -0.3 |  | 6 | V |  | 3 |
| Operating Junction Temperature Range (LTC7003E) | TJ | -40 |  | 125 | °C | LTC7003E | 3 |
| Storage Temperature Range |  | -65 |  | 150 | °C |  | 3 |
| Maximum Junction Temperature | TJMAX |  |  | 150 | °C |  | 3 |
| VCC LDO Output Voltage | VCC |  | 10 |  | V | CVCC = 1µF, VIN = 12V | 4 |
| VCC LDO Dropout Voltage (VIN-VCC) | VIN-VCC |  | 0.2 |  | V | VIN = 6V, IVCC = -1mA | 4 |
| VIN DC Supply Current, Charge Pump Overdriven, ON Mode |  |  | 35 |  | µA | CVCC = 1µF, VBST-TS = 13V, VINP = 4V, VRUN = 2V | 4 |
| VIN DC Supply Current, Charge Pump Overdriven, Sleep Mode |  |  | 25 |  | µA | CVCC = 1µF, VBST-TS = 13V, VINP = 0.4V, VRUN = 2V | 4 |
| VIN DC Supply Current, Charge Pump Overdriven, Shutdown Mode |  |  | 1 |  | µA | CVCC = 1µF, VBST-TS = 13V, VRUN = 0V | 4 |
| SNS+ Current |  |  | 21 |  | µA | VINP = 4V, VRUN = 2V | 4 |
| SNS+ Current |  |  | 12 |  | µA | VINP = 0.4V, VRUN = 2V | 4 |
| Input Threshold Hysteresis |  |  | 400 |  | mV |  | 5 |
| Input Pull-Down Resistance |  |  | 1 |  | MΩ | VINP = 1V | 5 |
| RUN and OVLO Pin Threshold Hysteresis |  |  | 110 |  | mV |  | 5 |
| Over-Current to TG Low Propagation Delay |  |  | 70 |  | ns | ΔVSNS Step 10mV to 50mV, ISET = OPEN, VTIMER = VCC, VINP = 3.5V | 5 |
| Output Rise Time | tr |  | 13 |  | ns | 10% to 90%, CL = 1nF | 4 |
| Output Rise Time | tr |  | 90 |  | ns | 10% to 90%, CL = 10nF | 4 |
| Output Fall Time | tf |  | 13 |  | ns | 10% to 90%, CL = 1nF | 4 |
| Output Fall Time | tf |  | 40 |  | ns | 10% to 90%, CL = 10nF | 4 |
| BST-TS Floating UVLO Rising |  |  | 3.1 |  | V |  | 4 |
| BST-TS Floating UVLO Falling |  |  | 2.8 |  | V |  | 4 |
| Thermal Resistance, Junction to Ambient | θJA |  | 45 |  | °C/W |  | 3 |
| Thermal Resistance, Junction to Case | θJC |  | 10 |  | °C/W |  | 3 |

## CAD (KiCad official)

- Symbol: `LTC7003EMSE#TRPBF`
- Footprint: `Package_SO:MSOP-16-1EP_3x4.039mm_P0.5mm_EP1.651x2.845mm`
- 3D model: MSOP-16-EP (KiCad packages3D, STEP)
- 3D model files: `ltc7003emse-trpbf-etched.step` / `ltc7003emse-trpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ltc7003emse-trpbf.step` / `ltc7003emse-trpbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Analog Devices datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588908411639500800) (26 pp, sha256 `36f4c47ec9a56f55`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ltc7003emse-trpbf-datasheet.pdf)