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LTC3226EUD#TRPBF

Analog Devices · Battery Management ICs · QFN-16-EP(3x3)

LTC3226EUD#TRPBF from Analog Devices, in a QFN-16-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VOUT power_out Voltage output that powers the external load from VIN or the supercapacitor via the LDO; it should be bypassed with a low ESR ceramic capacitor of at least 47μF to GND.
2 PFO output Open-drain power-fail status output pulled to ground by an internal N-channel MOSFET when the PFI input is below 1.2V.
3 PFI input Power-fail comparator input with a 1.2V falling threshold and 20mV hysteresis, which controls PFO and the normal/backup operating mode.
4 LDO_FB input LDO feedback compared to the internal 0.8V reference; an external divider between VOUT, LDO_FB and GND programs the LDO output voltage.
5 GATE output External PFET gate drive from the ideal diode controller, which regulates VOUT to 15mV below VIN.
6 RST_FB input Reset comparator input with a 0.74V falling threshold and 20mV hysteresis, controlling the RST output.
7 RST output Open-drain reset status output pulled low when RST_FB falls below 0.74V and released after a 290ms delay once VOUT recovers.
8 EN_CHG input Charge pump enable with an internal pull-up; pulling this pin below 0.4V disables the internal charge pump.
9 PROG passive Charger input current limit programming pin, where a resistor to GND sets the limit with the PROG pin servoed to 1V.
10 CPO_FB input Charge pump feedback compared to the internal 1.2V reference; an external divider between CPO, CPO_FB and GND programs the CPO termination voltage.
11 CAPGOOD output Open-drain CPO status output pulled to ground until CPO is within 7.5% of its target value, then high impedance.
12 C- passive Internal charge pump flying capacitor negative terminal, connected to C+ through a 1μF to 10μF X5R or X7R ceramic capacitor.
13 VIN power_in Primary input supply with a 2.5V to 5.5V input range, bypassed to GND with a low ESR ceramic capacitor of at least 2.2μF.
14 VMID passive Midpoint of the two series supercapacitors, servoed to half of the CPO voltage by a leakage balancer with about 4.5mA source and 5.5mA sink capability.
15 C+ passive Internal charge pump flying capacitor positive terminal, connected to C- through a 1μF to 10μF X5R or X7R ceramic capacitor.
16 CPO power_out Backup supply pin connected to the top plate of the top supercapacitor, which receives power from VIN through the charge pump and supplies VOUT through the LDO during backup.
17 GND power_in Exposed pad ground that must be connected to a continuous ground plane on the second PCB layer through several vias directly under the part.

Key specifications

Parameter Value
Manufacturer Analog Devices
Package QFN-16-EP(3x3)
Category Power Management ICs
Pins 17

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Supply Range VIN 2.5 5.5 V 3
VIN Quiescent Current in Normal Mode IVIN(ST) 10 μA VPFI > 1.2V, VCPO_FB > 1.2V, VIN < VCPO 3
CPO Quiescent Current in Normal Mode ICPO(ST) 20 μA VPFI > 1.2V, VCPO_FB > 1.2V, VIN < VCPO 3
VOUT Quiescent Current in Normal Mode IVOUT(ST) 5 μA VOUT = VIN, VPFI > 1.2V, VCPO_FB > 1.2V, VIN < VCPO 3
CPO Quiescent Current in Backup Mode ICPO(BU) 24 μA VPFI < 1.2V, VLDO_FB > 0.8V, VCPO > VOUT 3
VOUT Quiescent Current in Backup Mode IVOUT(BU) 3 μA VIN = 0V, VPFI < 1.2V, VLDO_FB > 0.8V, VCPO > VOUT 3
External Ideal Diode Forward Voltage (VIN-VOUT) VFWD(EDA) 15 mV IVOUT = 2mA 3
Fast Turn-Off Voltage (VIN-VOUT) VRTO -45 mV VIN Falling 3
Fast Turn-On Voltage (VIN-VOUT) 45 mV VOUT Falling 3
CPO_FB Pin Threshold for Entering Sleep Mode VCPO_FB 1.18 1.21 1.24 V 3
CPO_FB Pin Hysteresis for Exiting Sleep Mode 20 mV 3
Charge Pump FB Pin Input Leakage ICPO_FB -50 50 nA VCPO_FB = 1.3V 3
CLK Frequency fOSC 0.75 0.9 1.05 MHz 3
Effective Open-Loop Output Impedance ROL 6 Ω VCPO = 4.5V, CFLY = 1μF 3
PROG Pin Servo Voltage VPROG 0.98 1 1.02 V VCPO_FB < 1.2V 3
Input Current Limit IVIN(ILIM) 360 mA RPROG = 33.3k, VCPO = 0V 3
Ratio of VIN Input Current Limit to PROG Pin Current hPROG 10500 A/A RPROG = 33.3k, VCPO = 0V 3
CPO Pin Charging Current (1x Mode) ICHRG(1x) 315 mA VIN = 3.8V, RPROG = 33.3k, VCPO = 3V 3
CPO Pin Charging Current (2x Mode) ICHRG(2x) 157.5 mA RPROG = 33.3k 3
Short-Circuit Charge Current ISC 600 mA PROG Pin Grounded, VCPO = 0V 3
VIN to CPO Voltage Differential for Switching Mode from 1x to 2x VMODE 200 mV 3
1x/2x Mode Comparator Hysteresis 120 mV 3
Maximum Voltage Across Either Supercapacitor After Charging VCLAMP 2.65 2.75 V 3
Maximum Supercapacitor Stack Voltage VSTACK 5.3 5.5 V 3
VMID Output Voltage VMID 2.5 V 3
VMID Current Sourcing Capability 4.5 mA VMID < VCPO/2, VCPO_FB > 1.24V 3
VMID Current Sinking Capability 5.5 mA VMID > VCPO/2, VCPO_FB > 1.24V 3
CPO_FB Pin Threshold Voltage (Rising) for CAPGOOD 1.09 1.11 1.13 V 3
CPO_FB Pin Hysteresis for CAPGOOD 20 mV 3
CAPGOOD Output Low Voltage 65 mV ISINK = 5mA 3
CAPGOOD High Impedance Leakage Current 1 μA VCAPGOOD = 5V 3
LDO FB Servo Voltage VLDO_FB 0.76 0.8 0.82 V IVOUT = 1mA 4
Load Regulation ΔVLDO_FB/ΔIOUT 2.7 mV/A 1mA < IVOUT < 2A 4
LDO FET RDS(ON) 200 mΩ VCPO = 3.6V 4
LDO_FB Input Leakage Current ILDO_FB(LEAK) -60 60 nA VLDO_FB = 0.9V 4
LDO Current Limit ILIM 24 A 4
RST_FB Threshold (Falling Edge) VRST_FB(TH) 0.72 0.74 0.76 V 4
RST_FB Hysteresis VRST_FB(HYS) 20 mV 4
RST_FB Input Leakage Current IRST_FB(LEAK) -50 50 nA VRST_FB = 0.9V 4
RST Output Low Voltage 65 mV ISINK = 5mA 4
RST High Impedance Leakage Current 1 μA VRST = 5V 4
RST Delay (RST_FB Rising) 290 ms 4
PFI Input Threshold (Falling Edge) VPFI(TH) 1.175 1.2 1.225 V 4
PFI Input Hysteresis VPFI(HYS) 20 mV 4
PFI Input Leakage Current IPFI(LEAK) -50 50 nA VPFI = 0.5V 4
PFO Output Low Voltage 65 mV ISINK = 5mA 4
PFO High Impedance Leakage Current IPFO(LEAK) 1 μA VPFO = 5V 4
PFI Delay to PFO (PFI Falling) 0.5 μs 4
EN_CHG Input High Voltage VIH 1.3 V 4
EN_CHG Input Low Voltage VIL 0.4 V 4
EN_CHG Input High Current IIH -1 1 μA 4
EN_CHG Input Low Current IIL -1 1 μA 4
Operating Junction Temperature Range TJ -40 125 °C 2
Storage Temperature Range TSTG -65 150 °C 2
VIN, VOUT, VMID, CPO, RST, PFO, CAPGOOD, LDO_FB Voltage -0.3 6 V 2
Thermal Resistance, Junction to Ambient θJA 58.7 °C/W 2

CAD (KiCad official)

  • Symbol: LTC3226EUD#TRPBF
  • Footprint: Package_DFN_QFN:QFN-16-1EP_3x3mm_P0.5mm_EP1.7x1.7mm
  • 3D model: QFN-16-EP(3x3) (KiCad packages3D, STEP)
  • 3D model files: ltc3226eud-trpbf-etched.step / ltc3226eud-trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ltc3226eud-trpbf.step / ltc3226eud-trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Analog Devices datasheet (16 pp, sha256 6096fb27eed897c7, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF