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LSG65R650HT

Public Made by Adom

by adom

LONTEN MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LSG65R650HT

LONTEN · MOSFETs · TO-252

LSG65R650HT from LONTEN, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with a gate-source voltage limit of ±30 V (VGSS) and a typical threshold of 3.5 V (2.5 to 4.5 V).
2 D passive Drain, which is also the exposed tab; it is rated for 650 V drain-source (VDSS) and 7 A continuous at TC = 25°C (21 A pulsed).
3 S passive Source; carries the 7 A continuous body-diode forward current (IS) and is the return for the 650 V drain-source rating.

Key specifications

Parameter Value
Manufacturer LONTEN
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 650 V VGS=0 V, ID=0.25 mA 2
Gate threshold voltage VGS(th) 2.5 3.5 4.5 V VDS=VGS, ID=0.25mA 2
Gate leakage current, Forward IGSSF 50 nA VGS=30 V, VDS=0 V 2
Gate leakage current, Reverse IGSSR -50 nA VGS=-30 V, VDS=0 V 2
Drain-source on-state resistance (Tj = 25°C) RDS(on) 0.55 0.65 Ω VGS=10 V, ID=3.5 A, Tj = 25°C 2
Drain-source on-state resistance (Tj = 150°C) RDS(on) 1.43 Ω VGS=10 V, ID=3.5 A, Tj = 150°C 2
Gate resistance RG 5.7 Ω f=1 MHz, open drain 2
Input capacitance Ciss 480 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 2
Output capacitance Coss 325 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 2
Reverse transfer capacitance Crss 0.95 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 2
Turn-on delay time td(on) 12 ns VDD = 300V, ID = 3.5A 2
Rise time tr 6.13 ns RG = 10Ω, VGS=15V 3
Turn-off delay time td(off) 26 ns 3
Fall time tf 3.3 ns 3
Gate to source charge Qgs 4.2 nC VDD=480 V, ID=3.5A, VGS=0 to 10 V 3
Gate to drain charge Qgd 4 nC 3
Gate charge total Qg 13.1 nC 3
Gate plateau voltage Vplateau 5.1 V 3
Diode forward voltage VSD 0.85 V VGS=0 V, IF=3.5A 3
Reverse recovery time trr 200 ns VR=50 V, IF=3.5A, dIF/dt=100 A/μs 3
Reverse recovery charge Qrr 1.6 μC 3
Peak reverse recovery current Irrm 12.5 A 3
Drain-source voltage VDSS 650 V 1
Continuous drain current (TC = 25°C) ID 7 A TC = 25°C 1
Continuous drain current (TC = 100°C) ID 4.4 A TC = 100°C 1
Pulsed drain current IDM 21 A Note 1: limited by maximum junction temperature, maximum duty cycle 0.75 1
Gate-source voltage VGSS -30 30 V 1
Avalanche energy, single pulse EAS 120 mJ Note 2: IAS = 2A, VDD = 50V, starting Tj = 25°C 1
Avalanche current, repetitive IAR 7 A Note 3: repetitive rating, pulse width limited by maximum junction temperature 1
Operating and storage temperature range TJ, TSTG -55 150 °C 1
Continuous diode forward current IS 7 A 1
Diode pulse current IS,pulse 21 A 1
Thermal resistance, junction-to-case (TO-251/TO-252/TO-220/TO-263) RθJC 2 °C/W 2
Thermal resistance, junction-to-ambient (TO-251/TO-252/TO-220/TO-263) RθJA 62 °C/W 2
Soldering temperature, wave soldering at leads Tsold 260 °C 1.6mm from case for 10s 2

CAD (KiCad official)

  • Symbol: LSG65R650HT
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: lsg65r650ht-etched.step / lsg65r650ht-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lsg65r650ht.step / lsg65r650ht.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LONTEN datasheet (13 pp, sha256 8126bc36f8c7bf33, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF