# LPM9926SOF

**LOWPOWER** · MOSFETs · ESOP-8

LPM9926SOF from LOWPOWER, in a ESOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source terminal of the second N-channel MOSFET in the LPM9926 dual device. |
| 2 | G2 | input | Gate terminal of the second N-channel MOSFET; the datasheet gives VGS maximum of ±12 V. |
| 3 | S1 | passive | Source terminal of the first N-channel MOSFET in the LPM9926 dual device. |
| 4 | G1 | input | Gate terminal of the first N-channel MOSFET; the datasheet gives VGS maximum of ±12 V. |
| 5 | D2 | passive | Drain terminal of the second N-channel MOSFET; the datasheet gives VDS maximum of 20 V. |
| 6 | D2 | passive | Drain terminal of the second N-channel MOSFET (second drain pin); the datasheet gives VDS maximum of 20 V. |
| 7 | D1 | passive | Drain terminal of the first N-channel MOSFET (second drain pin); the datasheet gives VDS maximum of 20 V. |
| 8 | D1 | passive | Drain terminal of the first N-channel MOSFET; the datasheet gives VDS maximum of 20 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | LOWPOWER |
| Package | ESOP-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 2 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 2 |
| Continuous Drain Current | ID |  |  | 7.6 | A | TA=25℃ | 2 |
| Continuous Drain Current | ID |  |  | 6.1 | A | TA=70℃ | 2 |
| Pulsed Drain Current | IDM |  |  | 38 | A |  | 2 |
| Power Dissipation | PD |  |  | 2 | W | TA=25℃ | 2 |
| Power Dissipation | PD |  |  | 1.28 | W | TA=70℃ | 2 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 2 |
| Junction-to-Case Thermal Resistance t ≤ 10s | RθJA |  | 48 |  | ℃/W | t ≤ 10s | 2 |
| Junction-to-Case Thermal Resistance Steady State |  |  | 74 |  | ℃/W | Steady State | 2 |
| Maximum Junction-to-Lead Steady State | RθJL |  | 32 |  | ℃/W | Steady State | 2 |
| Drain-Source Breakdown Voltage | BVDSS |  | 20 |  | V | ID=250μA, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  | 1 |  | μA | VDS=20V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  | 5 |  | μA | VDS=20V, VGS=0V, TJ=55℃ | 3 |
| Gate-Body leakage current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=12V | 3 |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.75 | 1.1 | V | VDS=VGS, ID=250μA | 3 |
| On state drain current | ID(ON) |  | 38 |  | A | VGS=10V, VDS=5V | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 16.5 | 23 | mΩ | VGS=10V, ID=7.6A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 25 | 30 | mΩ | VGS=10V, ID=7.6A, TJ=125℃ | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 18.5 | 28 | mΩ | VGS=4.5V, ID=7A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 24 | 38 | mΩ | VGS=2.5V, ID=6A | 3 |
| Forward Transconductance | gFS |  | 25 |  | S | VDS=5V, ID=7.6A | 3 |
| Diode Forward Voltage | VSD |  | 0.7 | 1 | V | IS=1A, VGS=0V | 3 |
| Maximum Body-Diode Continuous Current | IS |  |  | 2.5 | A |  | 3 |
| Input Capacitance | Ciss |  | 525 |  | pF | VGS=0V, VDS=15V, f=1MHz | 3 |
| Output Capacitance | Coss |  | 95 |  | pF |  | 3 |
| Reverse Transfer Capacitance | Crss |  | 75 |  | pF |  | 3 |
| Gate resistance | Rg |  | 1.7 |  | Ω | VGS=0V, VDS=0V, f=1MHz | 3 |
| Total Gate Charge | Qg (10V) |  | 12.5 |  | nC | VGS=10V, VDS=15V, ID=7.6A | 3 |
| Total Gate Charge | Qg(4.5V) |  | 6 |  | nC |  | 3 |
| Gate Source Charge | Qgs |  | 1 |  | nC |  | 3 |
| Gate Drain Charge | Qgd |  | 2 |  | nC |  | 3 |
| Turn-On DelayTime | tD(on) |  | 3 |  | ns | VGS=10V, VDS=20V, RL= 2Ω, RGEN=3Ω | 3 |
| Turn-On Rise Time | tr |  | 7.5 |  | ns |  | 3 |
| Turn-Off DelayTime | tD(off) |  | 20 |  | ns |  | 3 |
| Turn-Off Fall Time | tf |  | 6 |  | ns |  | 3 |
| Body Diode Reverse Recovery Time | trr |  | 14 |  | ns | IF=7.6A, dI/dt=100A/μs | 3 |
| Body Diode Reverse Recovery Charge | Qrr |  | 6 |  | nC | IF=7.6A, dI/dt=100A/μs | 3 |

## CAD (KiCad official)

- Symbol: `LPM9926SOF`
- Footprint: `Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm`
- 3D model: ESOP-8 (KiCad packages3D, STEP)
- 3D model files: `lpm9926sof-etched.step` / `lpm9926sof-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lpm9926sof.step` / `lpm9926sof.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [LOWPOWER datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884297394622464) (7 pp, sha256 `c4461076e8c617f7`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/lpm9926sof-datasheet.pdf)