component
LPM9926SOF
Public Made by Adomby adom
LOWPOWER MOSFETs, ESOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| lpm9926sof-etched.glb | 17d ago |
| lpm9926sof-etched.step | 17d ago |
| lpm9926sof-hero.glb | 17d ago |
| lpm9926sof-hero.overlay.json | 17d ago |
| lpm9926sof.glb | 17d ago |
| lpm9926sof.kicad_mod | 17d ago |
| lpm9926sof.kicad_sym | 17d ago |
| lpm9926sof.lbr | 17d ago |
| lpm9926sof.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
LPM9926SOF
LOWPOWER · MOSFETs · ESOP-8
LPM9926SOF from LOWPOWER, in a ESOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source terminal of the second N-channel MOSFET in the LPM9926 dual device. |
| 2 | G2 | input | Gate terminal of the second N-channel MOSFET; the datasheet gives VGS maximum of ±12 V. |
| 3 | S1 | passive | Source terminal of the first N-channel MOSFET in the LPM9926 dual device. |
| 4 | G1 | input | Gate terminal of the first N-channel MOSFET; the datasheet gives VGS maximum of ±12 V. |
| 5 | D2 | passive | Drain terminal of the second N-channel MOSFET; the datasheet gives VDS maximum of 20 V. |
| 6 | D2 | passive | Drain terminal of the second N-channel MOSFET (second drain pin); the datasheet gives VDS maximum of 20 V. |
| 7 | D1 | passive | Drain terminal of the first N-channel MOSFET (second drain pin); the datasheet gives VDS maximum of 20 V. |
| 8 | D1 | passive | Drain terminal of the first N-channel MOSFET; the datasheet gives VDS maximum of 20 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LOWPOWER |
| Package | ESOP-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 2 | ||
| Continuous Drain Current | ID | 7.6 | A | TA=25℃ | 2 | ||
| Continuous Drain Current | ID | 6.1 | A | TA=70℃ | 2 | ||
| Pulsed Drain Current | IDM | 38 | A | 2 | |||
| Power Dissipation | PD | 2 | W | TA=25℃ | 2 | ||
| Power Dissipation | PD | 1.28 | W | TA=70℃ | 2 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 2 | ||
| Junction-to-Case Thermal Resistance t ≤ 10s | RθJA | 48 | ℃/W | t ≤ 10s | 2 | ||
| Junction-to-Case Thermal Resistance Steady State | 74 | ℃/W | Steady State | 2 | |||
| Maximum Junction-to-Lead Steady State | RθJL | 32 | ℃/W | Steady State | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | ID=250μA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | μA | VDS=20V, VGS=0V, TJ=55℃ | 3 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=12V | 3 | |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.75 | 1.1 | V | VDS=VGS, ID=250μA | 3 |
| On state drain current | ID(ON) | 38 | A | VGS=10V, VDS=5V | 3 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 16.5 | 23 | mΩ | VGS=10V, ID=7.6A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 25 | 30 | mΩ | VGS=10V, ID=7.6A, TJ=125℃ | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 18.5 | 28 | mΩ | VGS=4.5V, ID=7A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 24 | 38 | mΩ | VGS=2.5V, ID=6A | 3 | |
| Forward Transconductance | gFS | 25 | S | VDS=5V, ID=7.6A | 3 | ||
| Diode Forward Voltage | VSD | 0.7 | 1 | V | IS=1A, VGS=0V | 3 | |
| Maximum Body-Diode Continuous Current | IS | 2.5 | A | 3 | |||
| Input Capacitance | Ciss | 525 | pF | VGS=0V, VDS=15V, f=1MHz | 3 | ||
| Output Capacitance | Coss | 95 | pF | 3 | |||
| Reverse Transfer Capacitance | Crss | 75 | pF | 3 | |||
| Gate resistance | Rg | 1.7 | Ω | VGS=0V, VDS=0V, f=1MHz | 3 | ||
| Total Gate Charge | Qg (10V) | 12.5 | nC | VGS=10V, VDS=15V, ID=7.6A | 3 | ||
| Total Gate Charge | Qg(4.5V) | 6 | nC | 3 | |||
| Gate Source Charge | Qgs | 1 | nC | 3 | |||
| Gate Drain Charge | Qgd | 2 | nC | 3 | |||
| Turn-On DelayTime | tD(on) | 3 | ns | VGS=10V, VDS=20V, RL= 2Ω, RGEN=3Ω | 3 | ||
| Turn-On Rise Time | tr | 7.5 | ns | 3 | |||
| Turn-Off DelayTime | tD(off) | 20 | ns | 3 | |||
| Turn-Off Fall Time | tf | 6 | ns | 3 | |||
| Body Diode Reverse Recovery Time | trr | 14 | ns | IF=7.6A, dI/dt=100A/μs | 3 | ||
| Body Diode Reverse Recovery Charge | Qrr | 6 | nC | IF=7.6A, dI/dt=100A/μs | 3 |
CAD (KiCad official)
- Symbol:
LPM9926SOF - Footprint:
Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm - 3D model: ESOP-8 (KiCad packages3D, STEP)
- 3D model files:
lpm9926sof-etched.step/lpm9926sof-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lpm9926sof.step/lpm9926sof.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LOWPOWER datasheet (7 pp, sha256
c4461076e8c617f7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).