component
LNP4606T1G
Public Made by Adomby adom
LRC MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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LNP4606T1G
LRC · MOSFETs · SOP-8
LNP4606T1G from LRC, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (top device in the package diagram), N-channel 30 V, ID 7 A at TA=25°C. |
| 2 | G1 | input | Gate of MOSFET 1 (N-channel), VGS rated ±20 V maximum. |
| 3 | S2 | passive | Source of MOSFET 2 (bottom device in the package diagram), P-channel 30 V, ID -6 A at TA=25°C. |
| 4 | G2 | input | Gate of MOSFET 2 (P-channel), VGS rated ±20 V maximum. |
| 5 | D2 | passive | Drain of MOSFET 2 (P-channel), VDS rated 30 V; shorted to pin 6 in the diagram. |
| 6 | D2 | passive | Drain of MOSFET 2 (P-channel), VDS rated 30 V; shorted to pin 5 in the diagram. |
| 7 | D1 | passive | Drain of MOSFET 1 (N-channel), VDS rated 30 V; shorted to pin 8 in the diagram. |
| 8 | D1 | passive | Drain of MOSFET 1 (N-channel), VDS rated 30 V; shorted to pin 7 in the diagram. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage (N-Channel) | VDS | 30 | V | 1 | |||
| Drain-to-Source Voltage (P-Channel) | VDS | 30 | V | 1 | |||
| Gate-to-Source Voltage (N-Channel) | VGS | -20 | 20 | V | 1 | ||
| Gate-to-Source Voltage (P-Channel) | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 7 | A | TA =25°C | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 4.8 | A | TA =70°C | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -6 | A | TA =25°C | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -4.5 | A | TA =70°C | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 28 | A | 1 | |||
| Pulsed Drain Current (P-Channel) | IDM | -25 | A | 1 | |||
| Power Dissipation | PD | 2.1 | W | TA =25°C | 1 | ||
| Power Dissipation | PD | 1.3 | W | TA =70°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RΘJA | 62.5 | ℃/W | t ≤10 s | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RΘJA | 110 | ℃/W | Steady State | 1 | ||
| Drain-Source Breakdown Voltage (P-Channel) | VBRDSS | -30 | V | VGS = 0, ID = -250μA | 2 | ||
| Gate-Source Threshold Voltage (P-Channel) | VGS(th) | -1 | -3 | V | VDS =VGS , ID =-250μA | 2 | |
| Gate-Body Leakage Current (P-Channel) | IGSS | -1 | 1 | µA | VDS =0V, VGS = ± 20V | 2 | |
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | µA | VDS = -24 V, VGS = 0 V | 2 | ||
| Drain-Source On-Resistance (P-Channel) | RDS(ON) | 45 | 52 | mΩ | VGS = -10 V, ID = -5 A | 2 | |
| Drain-Source On-Resistance (P-Channel) | RDS(ON) | 55 | 75 | mΩ | VGS = -4.5 V, ID = -4 A | 2 | |
| Diode Forward Voltage (P-Channel) | VSD | -0.77 | -1 | V | IS = -1 A, VGS = 0 V | 2 | |
| Drain-Source Breakdown Voltage (N-Channel) | VBRDSS | 30 | V | VGS = 0, ID = 250μA | 3 | ||
| Gate-Source Threshold Voltage (N-Channel) | VGS(th) | 1 | 3 | V | VDS =VGS , ID = 250μA | 3 | |
| Gate-Body Leakage Current (N-Channel) | IGSS | -10 | 10 | µA | VDS =0V, VGS =±16V | 3 | |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 3 | ||
| Drain-Source On-Resistance (N-Channel) | RDS(ON) | 26 | 34 | mΩ | VGS = 10 V, ID = 6 A | 3 | |
| Drain-Source On-Resistance (N-Channel) | RDS(ON) | 36 | 52 | mΩ | VGS = 4.5 V, ID = 5 A | 3 | |
| Diode Forward Voltage (N-Channel) | VSD | 0.8 | 1.2 | V | IS = 1.7 A, VGS = 0 V | 3 |
CAD (KiCad official)
- Symbol:
LNP4606T1G - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
lnp4606t1g-etched.step/lnp4606t1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lnp4606t1g.step/lnp4606t1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (5 pp, sha256
28eecaf04ff227de, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# LNP4606T1G
**LRC** · MOSFETs · SOP-8
LNP4606T1G from LRC, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (top device in the package diagram), N-channel 30 V, ID 7 A at TA=25°C. |
| 2 | G1 | input | Gate of MOSFET 1 (N-channel), VGS rated ±20 V maximum. |
| 3 | S2 | passive | Source of MOSFET 2 (bottom device in the package diagram), P-channel 30 V, ID -6 A at TA=25°C. |
| 4 | G2 | input | Gate of MOSFET 2 (P-channel), VGS rated ±20 V maximum. |
| 5 | D2 | passive | Drain of MOSFET 2 (P-channel), VDS rated 30 V; shorted to pin 6 in the diagram. |
| 6 | D2 | passive | Drain of MOSFET 2 (P-channel), VDS rated 30 V; shorted to pin 5 in the diagram. |
| 7 | D1 | passive | Drain of MOSFET 1 (N-channel), VDS rated 30 V; shorted to pin 8 in the diagram. |
| 8 | D1 | passive | Drain of MOSFET 1 (N-channel), VDS rated 30 V; shorted to pin 7 in the diagram. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage (N-Channel) | VDS | | | 30 | V | | 1 |
| Drain-to-Source Voltage (P-Channel) | VDS | | | 30 | V | | 1 |
| Gate-to-Source Voltage (N-Channel) | VGS | -20 | | 20 | V | | 1 |
| Gate-to-Source Voltage (P-Channel) | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current (N-Channel) | ID | | | 7 | A | TA =25°C | 1 |
| Continuous Drain Current (N-Channel) | ID | | | 4.8 | A | TA =70°C | 1 |
| Continuous Drain Current (P-Channel) | ID | | | -6 | A | TA =25°C | 1 |
| Continuous Drain Current (P-Channel) | ID | | | -4.5 | A | TA =70°C | 1 |
| Pulsed Drain Current (N-Channel) | IDM | | | 28 | A | | 1 |
| Pulsed Drain Current (P-Channel) | IDM | | | -25 | A | | 1 |
| Power Dissipation | PD | | | 2.1 | W | TA =25°C | 1 |
| Power Dissipation | PD | | | 1.3 | W | TA =70°C | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ºC | | 1 |
| Thermal Resistance, Junction-to-Ambient | RΘJA | | | 62.5 | ℃/W | t ≤10 s | 1 |
| Thermal Resistance, Junction-to-Ambient | RΘJA | | | 110 | ℃/W | Steady State | 1 |
| Drain-Source Breakdown Voltage (P-Channel) | VBRDSS | -30 | | | V | VGS = 0, ID = -250μA | 2 |
| Gate-Source Threshold Voltage (P-Channel) | VGS(th) | -1 | | -3 | V | VDS =VGS , ID =-250μA | 2 |
| Gate-Body Leakage Current (P-Channel) | IGSS | -1 | | 1 | µA | VDS =0V, VGS = ± 20V | 2 |
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | | | -1 | µA | VDS = -24 V, VGS = 0 V | 2 |
| Drain-Source On-Resistance (P-Channel) | RDS(ON) | | 45 | 52 | mΩ | VGS = -10 V, ID = -5 A | 2 |
| Drain-Source On-Resistance (P-Channel) | RDS(ON) | | 55 | 75 | mΩ | VGS = -4.5 V, ID = -4 A | 2 |
| Diode Forward Voltage (P-Channel) | VSD | | -0.77 | -1 | V | IS = -1 A, VGS = 0 V | 2 |
| Drain-Source Breakdown Voltage (N-Channel) | VBRDSS | 30 | | | V | VGS = 0, ID = 250μA | 3 |
| Gate-Source Threshold Voltage (N-Channel) | VGS(th) | 1 | | 3 | V | VDS =VGS , ID = 250μA | 3 |
| Gate-Body Leakage Current (N-Channel) | IGSS | -10 | | 10 | µA | VDS =0V, VGS =±16V | 3 |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | | | 1 | µA | VDS = 30 V, VGS = 0 V | 3 |
| Drain-Source On-Resistance (N-Channel) | RDS(ON) | | 26 | 34 | mΩ | VGS = 10 V, ID = 6 A | 3 |
| Drain-Source On-Resistance (N-Channel) | RDS(ON) | | 36 | 52 | mΩ | VGS = 4.5 V, ID = 5 A | 3 |
| Diode Forward Voltage (N-Channel) | VSD | | 0.8 | 1.2 | V | IS = 1.7 A, VGS = 0 V | 3 |
## CAD (KiCad official)
- Symbol: `LNP4606T1G`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `lnp4606t1g-etched.step` / `lnp4606t1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lnp4606t1g.step` / `lnp4606t1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [LRC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590226418769690624) (5 pp, sha256 `28eecaf04ff227de`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/lnp4606t1g-datasheet.pdf)