# LNE08R085

**LONTEN** · MOSFETs · TO-263

LNE08R085 from LONTEN, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS(th) 1.0 to 2.5 V and an absolute maximum VGSS of ±20 V. |
| 2 | D | passive | Drain, also connected to the mounting tab; VDSS 80 V, continuous ID 80 A at TC = 25°C (package limited), pulsed IDM 320 A. |
| 3 | S | passive | Source; body diode runs from source to drain with VSD max 1.3 V at IS = 20 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | LONTEN |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 80 |  |  | V | VGS=0 V, ID=250uA | 2 |
| Gate threshold voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250uA | 2 |
| Drain-source leakage current | IDSS |  |  | 1 | μA | VDS=80V, VGS=0V, TJ = 25°C | 2 |
| Drain-source leakage current | IDSS |  |  | 30 | μA | VDS=64V, VGS=0V, TJ = 125°C | 2 |
| Gate leakage current, Forward | IGSSF |  |  | 100 | nA | VGS=20 V, VDS=0 V | 2 |
| Gate leakage current, Reverse | IGSSR |  |  | -100 | nA | VGS=-20 V, VDS=0 V | 2 |
| Drain-source on-state resistance | RDS(on) |  | 6.5 | 8.5 | mΩ | VGS=10 V, ID= 20 A | 2 |
| Drain-source on-state resistance | RDS(on) |  | 7.8 | 11 | mΩ | VGS=4.5 V, ID=10 A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.3 | V | VGS=0V, IS=20A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDSS |  |  | 80 | V |  | 1 |
| Continuous drain current | ID |  |  | 80 | A | TC = 25°C | 1 |
| Continuous drain current | ID |  |  | 53 | A | TC = 100°C | 1 |
| Pulsed drain current | IDM |  |  | 320 | A |  | 1 |
| Gate-Source voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Avalanche energy | EAS |  |  | 306 | mJ | VDD=50V, VGS=10V, L=0.5mH, IAS=35A, RG=25Ω, Starting TJ=25℃ | 1 |
| Power Dissipation (TO-220/TO-263) | PD |  |  | 147 | W | TC = 25°C | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance, Junction-to-Case (TO-220/TO-263) | RθJC |  | 0.85 |  | °C/W |  | 1 |
| Thermal Resistance, Junction-to-Ambient (TO-220/TO-263) | RθJA |  | 62 |  | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `LNE08R085`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `lne08r085-etched.step` / `lne08r085-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lne08r085.step` / `lne08r085.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [LONTEN datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885430364618752) (9 pp, sha256 `5ee238ee8d051c66`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/lne08r085-datasheet.pdf)