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LNE08R085

Public Made by Adom

by adom

LONTEN MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LNE08R085

LONTEN · MOSFETs · TO-263

LNE08R085 from LONTEN, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS(th) 1.0 to 2.5 V and an absolute maximum VGSS of ±20 V.
2 D passive Drain, also connected to the mounting tab; VDSS 80 V, continuous ID 80 A at TC = 25°C (package limited), pulsed IDM 320 A.
3 S passive Source; body diode runs from source to drain with VSD max 1.3 V at IS = 20 A.

Key specifications

Parameter Value
Manufacturer LONTEN
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 80 V VGS=0 V, ID=250uA 2
Gate threshold voltage VGS(th) 1 1.6 2.5 V VDS=VGS, ID=250uA 2
Drain-source leakage current IDSS 1 μA VDS=80V, VGS=0V, TJ = 25°C 2
Drain-source leakage current IDSS 30 μA VDS=64V, VGS=0V, TJ = 125°C 2
Gate leakage current, Forward IGSSF 100 nA VGS=20 V, VDS=0 V 2
Gate leakage current, Reverse IGSSR -100 nA VGS=-20 V, VDS=0 V 2
Drain-source on-state resistance RDS(on) 6.5 8.5 mΩ VGS=10 V, ID= 20 A 2
Drain-source on-state resistance RDS(on) 7.8 11 mΩ VGS=4.5 V, ID=10 A 2
Diode Forward Voltage VSD 1.3 V VGS=0V, IS=20A, TJ=25℃ 2
Drain-Source Voltage VDSS 80 V 1
Continuous drain current ID 80 A TC = 25°C 1
Continuous drain current ID 53 A TC = 100°C 1
Pulsed drain current IDM 320 A 1
Gate-Source voltage VGSS -20 20 V 1
Avalanche energy EAS 306 mJ VDD=50V, VGS=10V, L=0.5mH, IAS=35A, RG=25Ω, Starting TJ=25℃ 1
Power Dissipation (TO-220/TO-263) PD 147 W TC = 25°C 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Thermal Resistance, Junction-to-Case (TO-220/TO-263) RθJC 0.85 °C/W 1
Thermal Resistance, Junction-to-Ambient (TO-220/TO-263) RθJA 62 °C/W 1

CAD (KiCad official)

  • Symbol: LNE08R085
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: lne08r085-etched.step / lne08r085-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lne08r085.step / lne08r085.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LONTEN datasheet (9 pp, sha256 5ee238ee8d051c66, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF