component
LMBTA13LT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
LMBTA13LT1G
LRC · Bipolar (BJT) · SOT-23
LMBTA13LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the Darlington amplifier; the datasheet gives no base-specific limit, so the device maximum emitter-base voltage of 10 Vdc applies across the base-emitter junction. |
| 2 | EMITTER | passive | Emitter terminal of the Darlington pair; the emitter-base voltage is rated 10 Vdc maximum and the continuous collector current rating is 300 mAdc. |
| 3 | COLLECTOR | passive | Collector terminal of the Darlington pair; the collector-emitter voltage is rated 30 Vdc (VCES) and the continuous collector current is 300 mAdc maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 30 | Vdc | IC = 100 µAdc, VBE = 0 | 1 | ||
| Collector Cutoff Current | ICBO | 100 | nAdc | VCB = 30 Vdc, IE = 0 | 1 | ||
| Emitter Cutoff Current | IEBO | 100 | nAdc | VEB = 10 Vdc, IC = 0 | 1 | ||
| DC Current Gain (LMBTA13) | hFE | 5000 | IC = 10 mAdc, VCE = 5.0 Vdc | 2 | |||
| DC Current Gain (LMBTA13) | hFE | 10000 | IC = 100 mAdc, VCE = 5.0 Vdc | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.5 | Vdc | IC = 100 mAdc, IB = 0.1 mAdc | 2 | ||
| Base-Emitter On Voltage | VBE | 2 | Vdc | IC = 100 mAdc, VCE = 5.0 Vdc | 2 | ||
| Current, Gain-Bandwidth Product | fT | 125 | MHz | VCE = 5.0 Vdc, IC = 10 mAdc, f = 100 MHz | 2 | ||
| Collector-Emitter Voltage | VCES | 30 | Vdc | 1 | |||
| Collector-Base Voltage | VCBO | 30 | Vdc | 1 | |||
| Emitter-Base Voltage | VEBO | 10 | Vdc | 1 | |||
| Collector Current, Continuous | IC | 300 | mAdc | 1 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Total Device Dissipation (FR-5 board) | PD | 225 | mW | FR-5 board, TA = 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient (FR-5 board) | RθJA | 556 | °C/W | FR-5 board, TA = 25°C | 1 | ||
| Total Device Dissipation (Alumina substrate) | PD | 300 | mW | Alumina substrate, TA = 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient (Alumina substrate) | RθJA | 417 | °C/W | Alumina substrate, TA = 25°C | 1 |
CAD (KiCad official)
- Symbol:
LMBTA13LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lmbta13lt1g-etched.step/lmbta13lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lmbta13lt1g.step/lmbta13lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (6 pp, sha256
570068dc913cf7f9, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# LMBTA13LT1G
**LRC** · Bipolar (BJT) · SOT-23
LMBTA13LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the Darlington amplifier; the datasheet gives no base-specific limit, so the device maximum emitter-base voltage of 10 Vdc applies across the base-emitter junction. |
| 2 | EMITTER | passive | Emitter terminal of the Darlington pair; the emitter-base voltage is rated 10 Vdc maximum and the continuous collector current rating is 300 mAdc. |
| 3 | COLLECTOR | passive | Collector terminal of the Darlington pair; the collector-emitter voltage is rated 30 Vdc (VCES) and the continuous collector current is 300 mAdc maximum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 30 | | | Vdc | IC = 100 µAdc, VBE = 0 | 1 |
| Collector Cutoff Current | ICBO | | | 100 | nAdc | VCB = 30 Vdc, IE = 0 | 1 |
| Emitter Cutoff Current | IEBO | | | 100 | nAdc | VEB = 10 Vdc, IC = 0 | 1 |
| DC Current Gain (LMBTA13) | hFE | 5000 | | | | IC = 10 mAdc, VCE = 5.0 Vdc | 2 |
| DC Current Gain (LMBTA13) | hFE | 10000 | | | | IC = 100 mAdc, VCE = 5.0 Vdc | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | 1.5 | Vdc | IC = 100 mAdc, IB = 0.1 mAdc | 2 |
| Base-Emitter On Voltage | VBE | | | 2 | Vdc | IC = 100 mAdc, VCE = 5.0 Vdc | 2 |
| Current, Gain-Bandwidth Product | fT | 125 | | | MHz | VCE = 5.0 Vdc, IC = 10 mAdc, f = 100 MHz | 2 |
| Collector-Emitter Voltage | VCES | | | 30 | Vdc | | 1 |
| Collector-Base Voltage | VCBO | | | 30 | Vdc | | 1 |
| Emitter-Base Voltage | VEBO | | | 10 | Vdc | | 1 |
| Collector Current, Continuous | IC | | | 300 | mAdc | | 1 |
| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Total Device Dissipation (FR-5 board) | PD | | | 225 | mW | FR-5 board, TA = 25°C | 1 |
| Thermal Resistance, Junction to Ambient (FR-5 board) | RθJA | | | 556 | °C/W | FR-5 board, TA = 25°C | 1 |
| Total Device Dissipation (Alumina substrate) | PD | | | 300 | mW | Alumina substrate, TA = 25°C | 1 |
| Thermal Resistance, Junction to Ambient (Alumina substrate) | RθJA | | | 417 | °C/W | Alumina substrate, TA = 25°C | 1 |
## CAD (KiCad official)
- Symbol: `LMBTA13LT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `lmbta13lt1g-etched.step` / `lmbta13lt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lmbta13lt1g.step` / `lmbta13lt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [LRC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586176280244981760) (6 pp, sha256 `570068dc913cf7f9`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/lmbta13lt1g-datasheet.pdf)