component

LMBTA13LT1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LMBTA13LT1G

LRC · Bipolar (BJT) · SOT-23

LMBTA13LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the Darlington amplifier; the datasheet gives no base-specific limit, so the device maximum emitter-base voltage of 10 Vdc applies across the base-emitter junction.
2 EMITTER passive Emitter terminal of the Darlington pair; the emitter-base voltage is rated 10 Vdc maximum and the continuous collector current rating is 300 mAdc.
3 COLLECTOR passive Collector terminal of the Darlington pair; the collector-emitter voltage is rated 30 Vdc (VCES) and the continuous collector current is 300 mAdc maximum.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 30 Vdc IC = 100 µAdc, VBE = 0 1
Collector Cutoff Current ICBO 100 nAdc VCB = 30 Vdc, IE = 0 1
Emitter Cutoff Current IEBO 100 nAdc VEB = 10 Vdc, IC = 0 1
DC Current Gain (LMBTA13) hFE 5000 IC = 10 mAdc, VCE = 5.0 Vdc 2
DC Current Gain (LMBTA13) hFE 10000 IC = 100 mAdc, VCE = 5.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 1.5 Vdc IC = 100 mAdc, IB = 0.1 mAdc 2
Base-Emitter On Voltage VBE 2 Vdc IC = 100 mAdc, VCE = 5.0 Vdc 2
Current, Gain-Bandwidth Product fT 125 MHz VCE = 5.0 Vdc, IC = 10 mAdc, f = 100 MHz 2
Collector-Emitter Voltage VCES 30 Vdc 1
Collector-Base Voltage VCBO 30 Vdc 1
Emitter-Base Voltage VEBO 10 Vdc 1
Collector Current, Continuous IC 300 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation (FR-5 board) PD 225 mW FR-5 board, TA = 25°C 1
Thermal Resistance, Junction to Ambient (FR-5 board) RθJA 556 °C/W FR-5 board, TA = 25°C 1
Total Device Dissipation (Alumina substrate) PD 300 mW Alumina substrate, TA = 25°C 1
Thermal Resistance, Junction to Ambient (Alumina substrate) RθJA 417 °C/W Alumina substrate, TA = 25°C 1

CAD (KiCad official)

  • Symbol: LMBTA13LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lmbta13lt1g-etched.step / lmbta13lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lmbta13lt1g.step / lmbta13lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (6 pp, sha256 570068dc913cf7f9, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF