component
LMBTA05LT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| lmbta05lt1g-etched.glb | 6d ago |
| lmbta05lt1g-etched.step | 6d ago |
| lmbta05lt1g-hero.glb | 6d ago |
| lmbta05lt1g-hero.overlay.json | 6d ago |
| lmbta05lt1g.glb | 6d ago |
| lmbta05lt1g.kicad_mod | 6d ago |
| lmbta05lt1g.kicad_sym | 6d ago |
| lmbta05lt1g.lbr | 6d ago |
| lmbta05lt1g.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
LMBTA05LT1G
LRC · Bipolar (BJT) · SOT-23
LMBTA05LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the transistor; the datasheet specifies emitter-base breakdown voltage V(BR)EBO of 4.0 V minimum at I_E = 100 µA. |
| 2 | EMITTER | passive | Emitter terminal of the transistor; the device is rated for 500 mA maximum continuous collector current. |
| 3 | COLLECTOR | passive | Collector terminal of the transistor; the LMBTA05 collector-emitter breakdown voltage V(BR)CEO is 60 V minimum and collector-base voltage V_CBO is 60 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V (BR)CEO | 60 | Vdc | I C = 1.0 mAdc, I B = 0 (LMBTA05) | 1 | ||
| Emitter-Base Breakdown Voltage | V (BR)EBO | 4 | Vdc | I E = 100 µAdc, I C = 0 | 1 | ||
| Collector Cutoff Current | I CES | 0.1 | µAdc | V CE = 60Vdc, I B = 0 | 1 | ||
| Emitter Cutoff Current | I CBO | 0.1 | µAdc | V CB = 60Vdc, I E = 0 (LMBTA05) | 1 | ||
| DC Current Gain | hFE | 100 | I C = 10 mAdc, V CE = 1.0 Vdc | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | Vdc | I C = 100 mAdc, I B = 10 mAdc | 2 | ||
| Base-Emitter On Voltage | V BE(sat) | 1.2 | Vdc | I C = 100 mAdc, V CE= 1.0 Vdc | 2 | ||
| Current-Gain-Bandwidth Product | fT | 100 | MHz | V CE = 2.0 V, I C = 10mA, f = 100 MHz | 2 | ||
| Collector-Emitter Voltage | V CEO | 60 | Vdc | LMBTA05 | 1 | ||
| Collector-Base Voltage | V CBO | 60 | Vdc | LMBTA05 | 1 | ||
| Emitter-Base Voltage | V EBO | 4 | Vdc | 1 | |||
| Collector Current, Continuous | I C | 500 | mAdc | 1 | |||
| Junction and Storage Temperature | T J , T stg | -55 | 150 | °C | 1 | ||
| Total Device Dissipation (FR-5 Board) | P D | 225 | mW | FR-5 Board, TA = 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient (FR-5 Board) | R θJA | 556 | °C/W | FR-5 Board | 1 | ||
| Total Device Dissipation (Alumina Substrate) | P D | 300 | mW | Alumina Substrate, (2) TA = 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | R θJA | 417 | °C/W | Alumina Substrate | 1 |
CAD (KiCad official)
- Symbol:
LMBTA05LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lmbta05lt1g-etched.step/lmbta05lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lmbta05lt1g.step/lmbta05lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (3 pp, sha256
b248b359dec4e7c8, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).