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Contents

README

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LMBTA05LT1G

LRC · Bipolar (BJT) · SOT-23

LMBTA05LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the transistor; the datasheet specifies emitter-base breakdown voltage V(BR)EBO of 4.0 V minimum at I_E = 100 µA.
2 EMITTER passive Emitter terminal of the transistor; the device is rated for 500 mA maximum continuous collector current.
3 COLLECTOR passive Collector terminal of the transistor; the LMBTA05 collector-emitter breakdown voltage V(BR)CEO is 60 V minimum and collector-base voltage V_CBO is 60 V.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V (BR)CEO 60 Vdc I C = 1.0 mAdc, I B = 0 (LMBTA05) 1
Emitter-Base Breakdown Voltage V (BR)EBO 4 Vdc I E = 100 µAdc, I C = 0 1
Collector Cutoff Current I CES 0.1 µAdc V CE = 60Vdc, I B = 0 1
Emitter Cutoff Current I CBO 0.1 µAdc V CB = 60Vdc, I E = 0 (LMBTA05) 1
DC Current Gain hFE 100 I C = 10 mAdc, V CE = 1.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.25 Vdc I C = 100 mAdc, I B = 10 mAdc 2
Base-Emitter On Voltage V BE(sat) 1.2 Vdc I C = 100 mAdc, V CE= 1.0 Vdc 2
Current-Gain-Bandwidth Product fT 100 MHz V CE = 2.0 V, I C = 10mA, f = 100 MHz 2
Collector-Emitter Voltage V CEO 60 Vdc LMBTA05 1
Collector-Base Voltage V CBO 60 Vdc LMBTA05 1
Emitter-Base Voltage V EBO 4 Vdc 1
Collector Current, Continuous I C 500 mAdc 1
Junction and Storage Temperature T J , T stg -55 150 °C 1
Total Device Dissipation (FR-5 Board) P D 225 mW FR-5 Board, TA = 25°C 1
Thermal Resistance, Junction to Ambient (FR-5 Board) R θJA 556 °C/W FR-5 Board 1
Total Device Dissipation (Alumina Substrate) P D 300 mW Alumina Substrate, (2) TA = 25°C 1
Thermal Resistance, Junction to Ambient (Alumina Substrate) R θJA 417 °C/W Alumina Substrate 1

CAD (KiCad official)

  • Symbol: LMBTA05LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lmbta05lt1g-etched.step / lmbta05lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lmbta05lt1g.step / lmbta05lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (3 pp, sha256 b248b359dec4e7c8, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF