component

LMBT918LT1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LMBT918LT1G

LRC · Bipolar (BJT) · SOT-23

LMBT918LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN transistor; the emitter-base voltage VEBO is rated at 3.0 Vdc maximum.
2 EMITTER passive Emitter terminal of the NPN transistor; the emitter-base breakdown voltage V(BR)EBO is 3.0 Vdc minimum at IE = 10 µAdc.
3 COLLECTOR passive Collector terminal of the NPN transistor; the collector-emitter voltage VCEO is rated at 15 Vdc and the continuous collector current IC at 50 mAdc maximum.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 15 Vdc I C = 3.0 mAdc, I B = 0 1
Collector-Base Breakdown Voltage V(BR)CBO 30 Vdc I C = 1.0 µAdc, I E = 0 1
Emitter-Base Breakdown Voltage V(BR)EBO 3 Vdc I E = 10 µAdc, I C = 0 1
Collector Cutoff Current ICBO 50 nAdc V CB = 15 Vdc, I E = 0 1
DC Current Gain hFE 20 I C = 3.0 mAdc, V CE = 1.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.4 Vdc I C = 10 mAdc, I B = 1.0 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) 1 Vdc I C = 10 mAdc, I B = 1.0 mAdc 2
Current-Gain, Bandwidth Product fT 600 MHz I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz 2
Output Capacitance Cobo 3 pF V CB = 0 Vdc, I E = 0, f = 1.0 MHz 2
Output Capacitance Cobo 1.7 pF V CB = 10 Vdc, I E = 0, f = 1.0 MHz 2
Input Capacitance Cibo 2 pF V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz 2
Noise Figure NF 6 dB I C = 1.0 mAdc, V CE = 6.0 Vdc, R S = 50 Ω, f = 60 MHz 2
Power Output Pout 30 mW I C = 8.0 mAdc, V CB = 15 Vdc, f = 500 MHz 2
Common-Emitter Amplifier Power Gain Gpe 11 dB I C = 6.0 mAdc, V CB = 12 Vdc, f = 200 MHz 2
Collector-Emitter Voltage VCEO 15 Vdc 1
Collector-Base Voltage VCBO 30 Vdc 1
Emitter-Base Voltage VEBO 3 Vdc 1
Collector Current, Continuous IC 50 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation, FR-5 Board PD 225 mW FR-5 Board, TA = 25°C 1
Thermal Resistance, Junction to Ambient, FR-5 Board RθJA 556 °C/W FR-5 Board 1
Total Device Dissipation, Alumina Substrate PD 300 mW Alumina Substrate, TA = 25°C 1
Thermal Resistance, Junction to Ambient, Alumina Substrate RθJA 417 °C/W Alumina Substrate 1

CAD (KiCad official)

  • Symbol: LMBT918LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lmbt918lt1g-etched.step / lmbt918lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lmbt918lt1g.step / lmbt918lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (3 pp, sha256 7c846e663a8d2ae3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF