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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

LMBT918LT1G

LRC · Bipolar (BJT) · SOT-23

LMBT918LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	BASE	passive	Base terminal of the NPN transistor; the emitter-base voltage VEBO is rated at 3.0 Vdc maximum.
2	EMITTER	passive	Emitter terminal of the NPN transistor; the emitter-base breakdown voltage V(BR)EBO is 3.0 Vdc minimum at IE = 10 µAdc.
3	COLLECTOR	passive	Collector terminal of the NPN transistor; the collector-emitter voltage VCEO is rated at 15 Vdc and the continuous collector current IC at 50 mAdc maximum.

Key specifications

Parameter	Value
Manufacturer	LRC
Package	SOT-23
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Collector-Emitter Breakdown Voltage	V(BR)CEO	15		Vdc	I C = 3.0 mAdc, I B = 0	1
Collector-Base Breakdown Voltage	V(BR)CBO	30		Vdc	I C = 1.0 µAdc, I E = 0	1
Emitter-Base Breakdown Voltage	V(BR)EBO	3		Vdc	I E = 10 µAdc, I C = 0	1
Collector Cutoff Current	ICBO		50	nAdc	V CB = 15 Vdc, I E = 0	1
DC Current Gain	hFE	20			I C = 3.0 mAdc, V CE = 1.0 Vdc	2
Collector-Emitter Saturation Voltage	VCE(sat)		0.4	Vdc	I C = 10 mAdc, I B = 1.0 mAdc	2
Base-Emitter Saturation Voltage	VBE(sat)		1	Vdc	I C = 10 mAdc, I B = 1.0 mAdc	2
Current-Gain, Bandwidth Product	fT	600		MHz	I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz	2
Output Capacitance	Cobo		3	pF	V CB = 0 Vdc, I E = 0, f = 1.0 MHz	2
Output Capacitance	Cobo		1.7	pF	V CB = 10 Vdc, I E = 0, f = 1.0 MHz	2
Input Capacitance	Cibo		2	pF	V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz	2
Noise Figure	NF		6	dB	I C = 1.0 mAdc, V CE = 6.0 Vdc, R S = 50 Ω, f = 60 MHz	2
Power Output	Pout	30		mW	I C = 8.0 mAdc, V CB = 15 Vdc, f = 500 MHz	2
Common-Emitter Amplifier Power Gain	Gpe	11		dB	I C = 6.0 mAdc, V CB = 12 Vdc, f = 200 MHz	2
Collector-Emitter Voltage	VCEO		15	Vdc		1
Collector-Base Voltage	VCBO		30	Vdc		1
Emitter-Base Voltage	VEBO		3	Vdc		1
Collector Current, Continuous	IC		50	mAdc		1
Junction and Storage Temperature	TJ, Tstg	-55	150	°C		1
Total Device Dissipation, FR-5 Board	PD		225	mW	FR-5 Board, TA = 25°C	1
Thermal Resistance, Junction to Ambient, FR-5 Board	RθJA		556	°C/W	FR-5 Board	1
Total Device Dissipation, Alumina Substrate	PD		300	mW	Alumina Substrate, TA = 25°C	1
Thermal Resistance, Junction to Ambient, Alumina Substrate	RθJA		417	°C/W	Alumina Substrate	1

CAD (KiCad official)

Symbol: LMBT918LT1G
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: SOT-23 (KiCad packages3D, STEP)
3D model files: lmbt918lt1g-etched.step / lmbt918lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lmbt918lt1g.step / lmbt918lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: LRC datasheet (3 pp, sha256 7c846e663a8d2ae3, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF