# LMBT4403LT1G

**LRC** · Bipolar (BJT) · SOT-23

LMBT4403LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base lead of the PNP general-purpose transistor; the datasheet rates the emitter-base voltage at V_EBO = -5.0 Vdc. |
| 2 | EMITTER | passive | Emitter lead of the PNP general-purpose transistor; the datasheet rates the emitter-base voltage at V_EBO = -5.0 Vdc. |
| 3 | COLLECTOR | passive | Collector lead of the PNP general-purpose transistor; the datasheet rates V_CEO at -40 Vdc and continuous collector current at I_C = -600 mAdc. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector–Emitter Breakdown Voltage | V(BR)CEO | -40 |  |  | Vdc | IC = –1.0 mAdc, IB = 0 | 1 |
| Collector–Base Breakdown Voltage | V(BR)CBO | -40 |  |  | Vdc | IC = –0.1 mAdc, IE = 0 | 1 |
| Emitter–Base Breakdown Voltage | V(BR)EBO | -5 |  |  | Vdc | IE = –0.1 mAdc, IC = 0 | 1 |
| Base Cutoff Current | IBEV |  |  | -0.1 | µAdc | VCE = –35 Vdc, VEB = –0.4 Vdc | 1 |
| Collector Cutoff Current | ICEX |  |  | -0.1 | µAdc | VCE = –35 Vdc, VEB = –0.4 Vdc | 1 |
| DC Current Gain | hFE | 30 |  |  | — | IC = –0.1 mAdc, VCE = –1.0 Vdc | 2 |
| DC Current Gain | hFE | 60 |  |  | — | IC = –1.0 mAdc, VCE = –1.0 Vdc | 2 |
| DC Current Gain | hFE | 100 |  |  | — | IC = –10 mAdc, VCE = –1.0 Vdc | 2 |
| DC Current Gain | hFE | 100 |  | 300 | — | IC = –150 mAdc, VCE = –2.0 Vdc (3) | 2 |
| DC Current Gain | hFE | 20 |  |  | — | IC = –500 mAdc, VCE = –2.0 Vdc (3) | 2 |
| Collector–Emitter Saturation Voltage | VCE(sat) |  |  | -0.4 | Vdc | IC = –150 mAdc, IB = –15 mAdc | 2 |
| Collector–Emitter Saturation Voltage | VCE(sat) |  |  | -0.75 | Vdc | IC = –500 mAdc, IB = –50 mAdc | 2 |
| Base–Emitter Saturation Voltage | VBE(sat) | -0.75 |  | -0.95 | Vdc | IC = –150 mAdc, IB = –15 mAdc | 2 |
| Base–Emitter Saturation Voltage | VBE(sat) |  |  | -1.3 | Vdc | IC = –500 mAdc, IB = –50 mAdc | 2 |
| Current–Gain — Bandwidth Product | fT | 200 |  |  | MHz | IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz | 2 |
| Collector–Base Capacitance | Ccb |  |  | 8.5 | pF | VCB = –10 Vdc, IE = 0, f = 1.0 MHz | 2 |
| Emitter–Base Capacitance | Ceb |  |  | 30 | pF | VBE = –0.5 Vdc, IC = 0, f = 1.0 MHz | 2 |
| Input Impedance | hie | 1.5 |  | 15 | kΩ | VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz | 2 |
| Voltage Feedback Ratio | hre | 0.1 |  | 8 | X 10 –4 | VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz | 2 |
| Small–Signal Current Gain | hfe | 60 |  | 500 | — | VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz | 2 |
| Output Admittance | hoe | 1 |  | 100 | µmhos | VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz | 2 |
| Delay Time | td |  |  | 15 | ns | VCC = –30 Vdc, VEB = –2.0 Vdc, IC = –150 mAdc, IB1 = –15 mAdc | 2 |
| Rise Time | tr |  |  | 20 | ns | VCC = –30 Vdc, VEB = –2.0 Vdc, IC = –150 mAdc, IB1 = –15 mAdc | 2 |
| Storage Time | ts |  |  | 225 | ns | VCC = –30 Vdc, IC = –150 mAdc, IB1 = IB2 = –15 mAdc | 2 |
| Fall Time | tf |  |  | 30 | ns | VCC = –30 Vdc, IC = –150 mAdc, IB1 = IB2 = –15 mAdc | 2 |
| Collector–Emitter Voltage | VCEO |  |  | -40 | Vdc |  | 1 |
| Collector–Base Voltage | VCBO |  |  | -40 | Vdc |  | 1 |
| Emitter–Base Voltage | VEBO |  |  | -5 | Vdc |  | 1 |
| Collector Current — Continuous | IC |  |  | -600 | mAdc |  | 1 |
| Junction and Storage Temperature | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Total Device Dissipation (FR-5 board) | PD |  |  | 225 | mW | FR-5 Board (1), TA = 25°C | 1 |
| Derate above 25°C (FR-5 board) |  |  | 1.8 |  | mW/°C | FR-5 Board (1), derate above 25°C | 1 |
| Thermal Resistance, Junction to Ambient (FR-5 board) | RθJA |  |  | 556 | °C/W | FR-5 Board (1) | 1 |
| Total Device Dissipation (Alumina substrate) | PD |  |  | 300 | mW | Alumina Substrate (2), TA = 25°C | 1 |
| Derate above 25°C (Alumina substrate) |  |  | 2.4 |  | mW/°C | Alumina Substrate (2), derate above 25°C | 1 |
| Thermal Resistance, Junction to Ambient (Alumina substrate) | RθJA |  |  | 417 | °C/W | Alumina Substrate (2) | 1 |

## CAD (KiCad official)

- Symbol: `LMBT4403LT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `lmbt4403lt1g-etched.step` / `lmbt4403lt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lmbt4403lt1g.step` / `lmbt4403lt1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [LRC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586176103207198720) (6 pp, sha256 `00d88ca5474587ce`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/lmbt4403lt1g-datasheet.pdf)