component

LMBT4403LT1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs Publish 0.1.0 · Ray 1mo ago
viewers lmbt4403lt1g: viewers · Ray 1mo ago
lmbt4403lt1g-etched.glb lmbt4403lt1g: factory component page (tier=lcsc) · Ray 1mo ago
lmbt4403lt1g-etched.step lmbt4403lt1g: factory component page (tier=lcsc) · Ray 1mo ago
lmbt4403lt1g-hero.glb lmbt4403lt1g: hero GLB from the etched model (keeps the MPN mark) · Ray 1mo ago
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lmbt4403lt1g.step Publish 0.1.0 · Ray 1mo ago
package.json Publish 0.1.0 · Ray 1mo ago
page.json lmbt4403lt1g: specified limits as data (metadata.characteristics, 36 rows from the datasheet) · Ray 23d ago
README.md lmbt4403lt1g: specified limits as data (metadata.characteristics, 36 rows from the datasheet) · Ray 23d ago

LMBT4403LT1G

LRC · Bipolar (BJT) · SOT-23

LMBT4403LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base lead of the PNP general-purpose transistor; the datasheet rates the emitter-base voltage at V_EBO = -5.0 Vdc.
2 EMITTER passive Emitter lead of the PNP general-purpose transistor; the datasheet rates the emitter-base voltage at V_EBO = -5.0 Vdc.
3 COLLECTOR passive Collector lead of the PNP general-purpose transistor; the datasheet rates V_CEO at -40 Vdc and continuous collector current at I_C = -600 mAdc.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector–Emitter Breakdown Voltage V(BR)CEO -40 Vdc IC = –1.0 mAdc, IB = 0 1
Collector–Base Breakdown Voltage V(BR)CBO -40 Vdc IC = –0.1 mAdc, IE = 0 1
Emitter–Base Breakdown Voltage V(BR)EBO -5 Vdc IE = –0.1 mAdc, IC = 0 1
Base Cutoff Current IBEV -0.1 µAdc VCE = –35 Vdc, VEB = –0.4 Vdc 1
Collector Cutoff Current ICEX -0.1 µAdc VCE = –35 Vdc, VEB = –0.4 Vdc 1
DC Current Gain hFE 30 — IC = –0.1 mAdc, VCE = –1.0 Vdc 2
DC Current Gain hFE 60 — IC = –1.0 mAdc, VCE = –1.0 Vdc 2
DC Current Gain hFE 100 — IC = –10 mAdc, VCE = –1.0 Vdc 2
DC Current Gain hFE 100 300 — IC = –150 mAdc, VCE = –2.0 Vdc (3) 2
DC Current Gain hFE 20 — IC = –500 mAdc, VCE = –2.0 Vdc (3) 2
Collector–Emitter Saturation Voltage VCE(sat) -0.4 Vdc IC = –150 mAdc, IB = –15 mAdc 2
Collector–Emitter Saturation Voltage VCE(sat) -0.75 Vdc IC = –500 mAdc, IB = –50 mAdc 2
Base–Emitter Saturation Voltage VBE(sat) -0.75 -0.95 Vdc IC = –150 mAdc, IB = –15 mAdc 2
Base–Emitter Saturation Voltage VBE(sat) -1.3 Vdc IC = –500 mAdc, IB = –50 mAdc 2
Current–Gain — Bandwidth Product fT 200 MHz IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz 2
Collector–Base Capacitance Ccb 8.5 pF VCB = –10 Vdc, IE = 0, f = 1.0 MHz 2
Emitter–Base Capacitance Ceb 30 pF VBE = –0.5 Vdc, IC = 0, f = 1.0 MHz 2
Input Impedance hie 1.5 15 kΩ VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz 2
Voltage Feedback Ratio hre 0.1 8 X 10 –4 VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz 2
Small–Signal Current Gain hfe 60 500 — VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz 2
Output Admittance hoe 1 100 µmhos VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz 2
Delay Time td 15 ns VCC = –30 Vdc, VEB = –2.0 Vdc, IC = –150 mAdc, IB1 = –15 mAdc 2
Rise Time tr 20 ns VCC = –30 Vdc, VEB = –2.0 Vdc, IC = –150 mAdc, IB1 = –15 mAdc 2
Storage Time ts 225 ns VCC = –30 Vdc, IC = –150 mAdc, IB1 = IB2 = –15 mAdc 2
Fall Time tf 30 ns VCC = –30 Vdc, IC = –150 mAdc, IB1 = IB2 = –15 mAdc 2
Collector–Emitter Voltage VCEO -40 Vdc 1
Collector–Base Voltage VCBO -40 Vdc 1
Emitter–Base Voltage VEBO -5 Vdc 1
Collector Current — Continuous IC -600 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation (FR-5 board) PD 225 mW FR-5 Board (1), TA = 25°C 1
Derate above 25°C (FR-5 board) 1.8 mW/°C FR-5 Board (1), derate above 25°C 1
Thermal Resistance, Junction to Ambient (FR-5 board) RθJA 556 °C/W FR-5 Board (1) 1
Total Device Dissipation (Alumina substrate) PD 300 mW Alumina Substrate (2), TA = 25°C 1
Derate above 25°C (Alumina substrate) 2.4 mW/°C Alumina Substrate (2), derate above 25°C 1
Thermal Resistance, Junction to Ambient (Alumina substrate) RθJA 417 °C/W Alumina Substrate (2) 1

CAD (KiCad official)

  • Symbol: LMBT4403LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lmbt4403lt1g-etched.step / lmbt4403lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lmbt4403lt1g.step / lmbt4403lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (6 pp, sha256 00d88ca5474587ce, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF