# LMBT3906LT1G

**LRC** · Bipolar (BJT) · SOT-23

LMBT3906LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP general-purpose transistor; the datasheet's switching tests drive it with I_B1 = -1.0 mAdc at I_C = -10 mAdc. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is specified at -5.0 Vdc minimum, and V_EBO is rated at -5.0 Vdc. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; the datasheet rates V_CEO at -40 Vdc, V_CBO at -40 Vdc and continuous I_C at -200 mAdc. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector–Emitter Breakdown Voltage | V(BR)CEO | -40 |  |  | Vdc | I C = –1.0 mAdc, I B = 0 | 1 |
| Collector–Base Breakdown Voltage | V(BR)CBO | -40 |  |  | Vdc | I C = –10 µAdc, I E = 0 | 1 |
| Emitter–Base Breakdown Voltage | V(BR)EBO | -5 |  |  | Vdc | I E = –10 µAdc, I C = 0 | 1 |
| Base Cutoff Current | I BL |  |  | -50 | nAdc | V CE = –30 Vdc, V EB = –3.0 Vdc | 1 |
| Collector Cutoff Current | I CEX |  |  | -50 | nAdc | V CE = –30 Vdc, V EB = –3.0 Vdc | 1 |
| DC Current Gain | hFE | 60 |  |  |  | I C = –0.1 mAdc, V CE = –1.0 Vdc | 2 |
| DC Current Gain | hFE | 80 |  |  |  | I C = –1.0 mAdc, V CE = –1.0 Vdc | 2 |
| DC Current Gain | hFE | 100 |  | 300 |  | I C = –10 mAdc, V CE = –1.0 Vdc | 2 |
| DC Current Gain | hFE | 30 |  |  |  | I C = –100 mAdc, V CE = –1.0 Vdc | 2 |
| Collector–Emitter Saturation Voltage | VCE(sat) |  |  | -0.25 | Vdc | I C = –10 mAdc, I B = –1.0 mAdc | 2 |
| Collector–Emitter Saturation Voltage | VCE(sat) |  |  | -0.4 | Vdc | I C = –50 mAdc, I B = –5.0 mAdc | 2 |
| Base–Emitter Saturation Voltage | V BE(sat) | -0.65 |  | -0.85 | Vdc | I C = –10 mAdc, I B = –1.0 mAdc | 2 |
| Base–Emitter Saturation Voltage | V BE(sat) |  |  | -0.95 | Vdc | I C = –50 mAdc, I B = –5.0 mAdc | 2 |
| Current–Gain — Bandwidth Product | f T | 250 |  |  | MHz | I C = –10 mAdc, V CE= –20 Vdc, f = 100 MHz | 2 |
| Output Capacitance | C obo |  |  | 4.5 | pF | V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz | 2 |
| Input Capacitance | C ibo |  |  | 10 | pF | V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz | 2 |
| Input Impedance | h ie | 2 |  | 12 | kΩ | V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz | 2 |
| Voltage Feedback Ratio | h re | 0.1 |  | 10 | X 10 –4 | V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz | 2 |
| Small–Signal Current Gain | h fe | 100 |  | 400 |  | V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz | 2 |
| Output Admittance | h oe | 3 |  | 60 | µmhos | V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz | 2 |
| Noise Figure | NF |  |  | 4 | dB | V CE= –5.0Vdc, I C = –100 µAdc, R S =1.0 kΩ, f =1.0kHz | 2 |
| Delay Time | td |  |  | 35 | ns | V CC = – 3.0 Vdc, V BE = 0.5 Vdc, I C = –10 mAdc, I B1 = –1.0 mAdc | 2 |
| Rise Time | tr |  |  | 35 | ns | V CC = – 3.0 Vdc, V BE = 0.5 Vdc, I C = –10 mAdc, I B1 = –1.0 mAdc | 2 |
| Storage Time | ts |  |  | 225 | ns | V CC = –3.0 Vdc, I C = –10 mAdc, I B1 = I B2 = –1.0 mAdc | 2 |
| Fall Time | tf |  |  | 75 | ns | V CC = –3.0 Vdc, I C = –10 mAdc, I B1 = I B2 = –1.0 mAdc | 2 |
| Collector–Emitter Voltage | V CEO |  |  | -40 | Vdc |  | 1 |
| Collector–Base Voltage | V CBO |  |  | -40 | Vdc |  | 1 |
| Emitter–Base Voltage | V EBO |  |  | -5 | Vdc |  | 1 |
| Collector Current — Continuous | I C |  |  | -200 | mAdc |  | 1 |
| Total Device Dissipation | P D |  |  | 225 | mW | FR-5 Board, T A =25 °C | 1 |
| Total Device Dissipation | P D |  |  | 300 | mW | Alumina Substrate, T A = 25°C | 1 |
| Junction and Storage Temperature | T J , T stg | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance, Junction to Ambient (FR-5 board) | R θJA |  |  | 556 | °C/W | FR-5 Board | 1 |
| Thermal Resistance, Junction to Ambient (alumina substrate) | R θJA |  |  | 417 | °C/W | Alumina Substrate | 1 |

## CAD (KiCad official)

- Symbol: `LMBT3906LT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `lmbt3906lt1g-etched.step` / `lmbt3906lt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lmbt3906lt1g.step` / `lmbt3906lt1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [LRC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586171783624478720) (7 pp, sha256 `5d61e188fb3d947a`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/lmbt3906lt1g-datasheet.pdf)