component
LMBT3906LT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
lmbt3906lt1g: specified limits as data (metadata.characteristics, 34 rows from the datasheet)
2 files changed
+457−1
README.md+41@@ -21,6 +21,47 @@ LMBT3906LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from t | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector–Emitter Breakdown Voltage | V(BR)CEO | -40 | | | Vdc | I C = –1.0 mAdc, I B = 0 | 1 |+| Collector–Base Breakdown Voltage | V(BR)CBO | -40 | | | Vdc | I C = –10 µAdc, I E = 0 | 1 |+| Emitter–Base Breakdown Voltage | V(BR)EBO | -5 | | | Vdc | I E = –10 µAdc, I C = 0 | 1 |+| Base Cutoff Current | I BL | | | -50 | nAdc | V CE = –30 Vdc, V EB = –3.0 Vdc | 1 |+| Collector Cutoff Current | I CEX | | | -50 | nAdc | V CE = –30 Vdc, V EB = –3.0 Vdc | 1 |+| DC Current Gain | hFE | 60 | | | | I C = –0.1 mAdc, V CE = –1.0 Vdc | 2 |+| DC Current Gain | hFE | 80 | | | | I C = –1.0 mAdc, V CE = –1.0 Vdc | 2 |+| DC Current Gain | hFE | 100 | | 300 | | I C = –10 mAdc, V CE = –1.0 Vdc | 2 |+| DC Current Gain | hFE | 30 | | | | I C = –100 mAdc, V CE = –1.0 Vdc | 2 |+| Collector–Emitter Saturation Voltage | VCE(sat) | | | -0.25 | Vdc | I C = –10 mAdc, I B = –1.0 mAdc | 2 |+| Collector–Emitter Saturation Voltage | VCE(sat) | | | -0.4 | Vdc | I C = –50 mAdc, I B = –5.0 mAdc | 2 |+| Base–Emitter Saturation Voltage | V BE(sat) | -0.65 | | -0.85 | Vdc | I C = –10 mAdc, I B = –1.0 mAdc | 2 |+| Base–Emitter Saturation Voltage | V BE(sat) | | | -0.95 | Vdc | I C = –50 mAdc, I B = –5.0 mAdc | 2 |+| Current–Gain — Bandwidth Product | f T | 250 | | | MHz | I C = –10 mAdc, V CE= –20 Vdc, f = 100 MHz | 2 |+| Output Capacitance | C obo | | | 4.5 | pF | V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz | 2 |+| Input Capacitance | C ibo | | | 10 | pF | V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz | 2 |+| Input Impedance | h ie | 2 | | 12 | kΩ | V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz | 2 |+| Voltage Feedback Ratio | h re | 0.1 | | 10 | X 10 –4 | V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz | 2 |+| Small–Signal Current Gain | h fe | 100 | | 400 | | V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz | 2 |+| Output Admittance | h oe | 3 | | 60 | µmhos | V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz | 2 |+| Noise Figure | NF | | | 4 | dB | V CE= –5.0Vdc, I C = –100 µAdc, R S =1.0 kΩ, f =1.0kHz | 2 |+| Delay Time | td | | | 35 | ns | V CC = – 3.0 Vdc, V BE = 0.5 Vdc, I C = –10 mAdc, I B1 = –1.0 mAdc | 2 |+| Rise Time | tr | | | 35 | ns | V CC = – 3.0 Vdc, V BE = 0.5 Vdc, I C = –10 mAdc, I B1 = –1.0 mAdc | 2 |+| Storage Time | ts | | | 225 | ns | V CC = –3.0 Vdc, I C = –10 mAdc, I B1 = I B2 = –1.0 mAdc | 2 |+| Fall Time | tf | | | 75 | ns | V CC = –3.0 Vdc, I C = –10 mAdc, I B1 = I B2 = –1.0 mAdc | 2 |+| Collector–Emitter Voltage | V CEO | | | -40 | Vdc | | 1 |+| Collector–Base Voltage | V CBO | | | -40 | Vdc | | 1 |+| Emitter–Base Voltage | V EBO | | | -5 | Vdc | | 1 |+| Collector Current — Continuous | I C | | | -200 | mAdc | | 1 |+| Total Device Dissipation | P D | | | 225 | mW | FR-5 Board, T A =25 °C | 1 |+| Total Device Dissipation | P D | | | 300 | mW | Alumina Substrate, T A = 25°C | 1 |+| Junction and Storage Temperature | T J , T stg | -55 | | 150 | °C | | 1 |+| Thermal Resistance, Junction to Ambient (FR-5 board) | R θJA | | | 556 | °C/W | FR-5 Board | 1 |+| Thermal Resistance, Junction to Ambient (alumina substrate) | R θJA | | | 417 | °C/W | Alumina Substrate | 1 |+ ## CAD (KiCad official) - Symbol: `LMBT3906LT1G`
page.json+416−1@@ -147,6 +147,421 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "5d61e188fb3d947a",+ "rows": [+ {+ "name": "Collector–Emitter Breakdown Voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "Vdc",+ "min": -40,+ "typ": null,+ "max": null,+ "conditions": "I C = –1.0 mAdc, I B = 0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector–Base Breakdown Voltage",+ "symbol": "V(BR)CBO",+ "kind": "electrical",+ "unit": "Vdc",+ "min": -40,+ "typ": null,+ "max": null,+ "conditions": "I C = –10 µAdc, I E = 0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter–Base Breakdown Voltage",+ "symbol": "V(BR)EBO",+ "kind": "electrical",+ "unit": "Vdc",+ "min": -5,+ "typ": null,+ "max": null,+ "conditions": "I E = –10 µAdc, I C = 0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Base Cutoff Current",+ "symbol": "I BL",+ "kind": "electrical",+ "unit": "nAdc",+ "min": null,+ "typ": null,+ "max": -50,+ "conditions": "V CE = –30 Vdc, V EB = –3.0 Vdc",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "I CEX",+ "kind": "electrical",+ "unit": "nAdc",+ "min": null,+ "typ": null,+ "max": -50,+ "conditions": "V CE = –30 Vdc, V EB = –3.0 Vdc",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "I C = –0.1 mAdc, V CE = –1.0 Vdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 80,+ "typ": null,+ "max": null,+ "conditions": "I C = –1.0 mAdc, V CE = –1.0 Vdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 100,+ "typ": null,+ "max": 300,+ "conditions": "I C = –10 mAdc, V CE = –1.0 Vdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "I C = –100 mAdc, V CE = –1.0 Vdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector–Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": -0.25,+ "conditions": "I C = –10 mAdc, I B = –1.0 mAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector–Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": -0.4,+ "conditions": "I C = –50 mAdc, I B = –5.0 mAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base–Emitter Saturation Voltage",+ "symbol": "V BE(sat)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": -0.65,+ "typ": null,+ "max": -0.85,+ "conditions": "I C = –10 mAdc, I B = –1.0 mAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base–Emitter Saturation Voltage",+ "symbol": "V BE(sat)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": -0.95,+ "conditions": "I C = –50 mAdc, I B = –5.0 mAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Current–Gain — Bandwidth Product",+ "symbol": "f T",+ "kind": "electrical",+ "unit": "MHz",+ "min": 250,+ "typ": null,+ "max": null,+ "conditions": "I C = –10 mAdc, V CE= –20 Vdc, f = 100 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "C obo",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 4.5,+ "conditions": "V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "C ibo",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Impedance",+ "symbol": "h ie",+ "kind": "electrical",+ "unit": "kΩ",+ "min": 2,+ "typ": null,+ "max": 12,+ "conditions": "V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Voltage Feedback Ratio",+ "symbol": "h re",+ "kind": "electrical",+ "unit": "X 10 –4",+ "min": 0.1,+ "typ": null,+ "max": 10,+ "conditions": "V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Small–Signal Current Gain",+ "symbol": "h fe",+ "kind": "electrical",+ "unit": "",+ "min": 100,+ "typ": null,+ "max": 400,+ "conditions": "V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Admittance",+ "symbol": "h oe",+ "kind": "electrical",+ "unit": "µmhos",+ "min": 3,+ "typ": null,+ "max": 60,+ "conditions": "V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Noise Figure",+ "symbol": "NF",+ "kind": "electrical",+ "unit": "dB",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "V CE= –5.0Vdc, I C = –100 µAdc, R S =1.0 kΩ, f =1.0kHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Delay Time",+ "symbol": "td",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "V CC = – 3.0 Vdc, V BE = 0.5 Vdc, I C = –10 mAdc, I B1 = –1.0 mAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "V CC = – 3.0 Vdc, V BE = 0.5 Vdc, I C = –10 mAdc, I B1 = –1.0 mAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage Time",+ "symbol": "ts",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "V CC = –3.0 Vdc, I C = –10 mAdc, I B1 = I B2 = –1.0 mAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 75,+ "conditions": "V CC = –3.0 Vdc, I C = –10 mAdc, I B1 = I B2 = –1.0 mAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector–Emitter Voltage",+ "symbol": "V CEO",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": -40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector–Base Voltage",+ "symbol": "V CBO",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": -40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter–Base Voltage",+ "symbol": "V EBO",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current — Continuous",+ "symbol": "I C",+ "kind": "absolute_maximum",+ "unit": "mAdc",+ "min": null,+ "typ": null,+ "max": -200,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation",+ "symbol": "P D",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "FR-5 Board, T A =25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation",+ "symbol": "P D",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Alumina Substrate, T A = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature",+ "symbol": "T J , T stg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient (FR-5 board)",+ "symbol": "R θJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 556,+ "conditions": "FR-5 Board",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient (alumina substrate)",+ "symbol": "R θJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 417,+ "conditions": "Alumina Substrate",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +603,4 @@ "visibility": { "public": true }-}+}