component
LGE2301
Public Made by Adomby adom
LGE MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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LGE2301
LGE · MOSFETs · SOT-23
LGE2301 from LGE, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit ±10 V, threshold -0.4 to -1.0 V (typ -0.6 V) at ID=-250µA, logic-level drive with RDS(on) specified at VGS=-4.5 V and -3.3 V. |
| 2 | S | passive | Source of the P-channel MOSFET, body diode anode, continuous current -3.0 A at TA=25°C and body-diode current up to -1.5 A. |
| 3 | D | passive | Drain; drain-source breakdown voltage -20 V, continuous drain current -3.0 A at TA=25°C and pulsed -12 A, RDS(on) typ 70 mΩ at VGS=-4.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LGE |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -10 | 10 | V | Common Ratings, TA=25°C unless otherwise noted; printed as ±10 | 1 | |
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | Common Ratings, TA=25°C unless otherwise noted | 1 | ||
| Continuous Drain Current | ID | -3 | A | TA=25°C; mounted on large heat sink | 1 | ||
| Continuous Drain Current | ID | -2.5 | A | TA=70°C; mounted on large heat sink | 1 | ||
| Pulse Drain Current Tested | IDM | -12 | A | TA=25°C; pulse width limited by maximum allowable junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 1.2 | W | TA=25°C | 1 | ||
| Maximum Power Dissipation | PD | 0.9 | W | TA=70°C | 1 | ||
| Maximum Junction Temperature | TJ | 150 | °C | Common Ratings, TA=25°C unless otherwise noted | 1 | ||
| Storage Temperature Range | TSTG | -50 | 150 | °C | Common Ratings, TA=25°C unless otherwise noted | 1 | |
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS=0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current (TA=25℃) | IDSS | -1 | μA | VDS=-20V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TA=125℃) | IDSS | -100 | uA | VDS=-16V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±10V, VDS=0V; printed as ±100 | 2 | |
| Gate Threshold Voltage | VGS(TH) | -0.4 | -0.6 | -1 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 70 | 90 | mΩ | VGS=-4.5V, ID=-3A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 78 | 100 | mΩ | VGS=-3.3V, ID=-2A | 2 | |
| Source Drain Current (Body Diode) | IS | -1.5 | A | TA=25℃ | 2 | ||
| Forward on voltage | VSD | -0.85 | -1.2 | V | Tj=25℃, ISD=-2A, VGS=0V | 2 | |
| Thermal Resistance Junction-Ambient | RθJA | 100 | °C/W | Printed as a single rating in the Absolute Maximum table; no test conditions printed | 1 |
CAD (KiCad official)
- Symbol:
LGE2301 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lge2301-etched.step/lge2301-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lge2301.step/lge2301.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LGE datasheet (5 pp, sha256
30c161594e1dfb1e, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# LGE2301
**LGE** · MOSFETs · SOT-23
LGE2301 from LGE, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit ±10 V, threshold -0.4 to -1.0 V (typ -0.6 V) at ID=-250µA, logic-level drive with RDS(on) specified at VGS=-4.5 V and -3.3 V. |
| 2 | S | passive | Source of the P-channel MOSFET, body diode anode, continuous current -3.0 A at TA=25°C and body-diode current up to -1.5 A. |
| 3 | D | passive | Drain; drain-source breakdown voltage -20 V, continuous drain current -3.0 A at TA=25°C and pulsed -12 A, RDS(on) typ 70 mΩ at VGS=-4.5 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LGE |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -10 | | 10 | V | Common Ratings, TA=25°C unless otherwise noted; printed as ±10 | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | | | V | Common Ratings, TA=25°C unless otherwise noted | 1 |
| Continuous Drain Current | ID | -3 | | | A | TA=25°C; mounted on large heat sink | 1 |
| Continuous Drain Current | ID | -2.5 | | | A | TA=70°C; mounted on large heat sink | 1 |
| Pulse Drain Current Tested | IDM | -12 | | | A | TA=25°C; pulse width limited by maximum allowable junction temperature | 1 |
| Maximum Power Dissipation | PD | | | 1.2 | W | TA=25°C | 1 |
| Maximum Power Dissipation | PD | | | 0.9 | W | TA=70°C | 1 |
| Maximum Junction Temperature | TJ | | | 150 | °C | Common Ratings, TA=25°C unless otherwise noted | 1 |
| Storage Temperature Range | TSTG | -50 | | 150 | °C | Common Ratings, TA=25°C unless otherwise noted | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | | | V | VGS=0V, ID=-250μA | 2 |
| Zero Gate Voltage Drain Current (TA=25℃) | IDSS | | | -1 | μA | VDS=-20V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (TA=125℃) | IDSS | | | -100 | uA | VDS=-16V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±10V, VDS=0V; printed as ±100 | 2 |
| Gate Threshold Voltage | VGS(TH) | -0.4 | -0.6 | -1 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 70 | 90 | mΩ | VGS=-4.5V, ID=-3A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 78 | 100 | mΩ | VGS=-3.3V, ID=-2A | 2 |
| Source Drain Current (Body Diode) | IS | | | -1.5 | A | TA=25℃ | 2 |
| Forward on voltage | VSD | | -0.85 | -1.2 | V | Tj=25℃, ISD=-2A, VGS=0V | 2 |
| Thermal Resistance Junction-Ambient | RθJA | | 100 | | °C/W | Printed as a single rating in the Absolute Maximum table; no test conditions printed | 1 |
## CAD (KiCad official)
- Symbol: `LGE2301`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `lge2301-etched.step` / `lge2301-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lge2301.step` / `lge2301.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [LGE datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8777615749670899712) (5 pp, sha256 `30c161594e1dfb1e`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/lge2301-datasheet.pdf)