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LGE2301

Public Made by Adom

by adom

LGE MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LGE2301

LGE · MOSFETs · SOT-23

LGE2301 from LGE, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit ±10 V, threshold -0.4 to -1.0 V (typ -0.6 V) at ID=-250µA, logic-level drive with RDS(on) specified at VGS=-4.5 V and -3.3 V.
2 S passive Source of the P-channel MOSFET, body diode anode, continuous current -3.0 A at TA=25°C and body-diode current up to -1.5 A.
3 D passive Drain; drain-source breakdown voltage -20 V, continuous drain current -3.0 A at TA=25°C and pulsed -12 A, RDS(on) typ 70 mΩ at VGS=-4.5 V.

Key specifications

Parameter Value
Manufacturer LGE
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -10 10 V Common Ratings, TA=25°C unless otherwise noted; printed as ±10 1
Drain-Source Breakdown Voltage V(BR)DSS -20 V Common Ratings, TA=25°C unless otherwise noted 1
Continuous Drain Current ID -3 A TA=25°C; mounted on large heat sink 1
Continuous Drain Current ID -2.5 A TA=70°C; mounted on large heat sink 1
Pulse Drain Current Tested IDM -12 A TA=25°C; pulse width limited by maximum allowable junction temperature 1
Maximum Power Dissipation PD 1.2 W TA=25°C 1
Maximum Power Dissipation PD 0.9 W TA=70°C 1
Maximum Junction Temperature TJ 150 °C Common Ratings, TA=25°C unless otherwise noted 1
Storage Temperature Range TSTG -50 150 °C Common Ratings, TA=25°C unless otherwise noted 1
Drain-Source Breakdown Voltage V(BR)DSS -20 V VGS=0V, ID=-250μA 2
Zero Gate Voltage Drain Current (TA=25℃) IDSS -1 μA VDS=-20V, VGS=0V 2
Zero Gate Voltage Drain Current (TA=125℃) IDSS -100 uA VDS=-16V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±10V, VDS=0V; printed as ±100 2
Gate Threshold Voltage VGS(TH) -0.4 -0.6 -1 V VDS=VGS, ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 70 90 mΩ VGS=-4.5V, ID=-3A 2
Drain-Source On-State Resistance RDS(ON) 78 100 mΩ VGS=-3.3V, ID=-2A 2
Source Drain Current (Body Diode) IS -1.5 A TA=25℃ 2
Forward on voltage VSD -0.85 -1.2 V Tj=25℃, ISD=-2A, VGS=0V 2
Thermal Resistance Junction-Ambient RθJA 100 °C/W Printed as a single rating in the Absolute Maximum table; no test conditions printed 1

CAD (KiCad official)

  • Symbol: LGE2301
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lge2301-etched.step / lge2301-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lge2301.step / lge2301.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LGE datasheet (5 pp, sha256 30c161594e1dfb1e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF