component
LDN3408ET1G
Public Made by Adomby adom
LRC MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 29d ago |
| viewers | 29d ago |
| ldn3408et1g-etched.glb | 29d ago |
| ldn3408et1g-etched.step | 29d ago |
| ldn3408et1g-hero.glb | 29d ago |
| ldn3408et1g-hero.overlay.json | 29d ago |
| ldn3408et1g.glb | 29d ago |
| ldn3408et1g.kicad_mod | 29d ago |
| ldn3408et1g.kicad_sym | 29d ago |
| ldn3408et1g.lbr | 29d ago |
| ldn3408et1g.step | 29d ago |
| package.json | 29d ago |
| page.json | 23d ago |
| README.md | 23d ago |
LDN3408ET1G
LRC · MOSFETs · SOT-23-6
LDN3408ET1G from LRC, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±12V with 2kV HBM ESD protection. |
| 2 | S2 | passive | Source of MOSFET 2. |
| 3 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±12V with 2kV HBM ESD protection. |
| 4 | D2 | passive | Drain of MOSFET 2; drain-source voltage up to 30V, continuous drain current 2A. |
| 5 | S1 | passive | Source of MOSFET 1. |
| 6 | D1 | passive | Drain of MOSFET 1; drain-source voltage up to 30V, continuous drain current 2A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | Ta=25℃ unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | Printed as ±12 V | 1 | |
| Drain Current-Continuous | ID | 2 | A | Ta=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | 8 | A | 1 | |||
| Power Dissipation | PD | 1.25 | W | Ta=25℃; derate above 25℃ at 10 mW/℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Typical Thermal resistance-Junction to Ambient | RθJA | 100 | ℃/W | Junction to ambient, typical as printed | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.6 | 1.4 | V | VDS=VGS, ID=250μA | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 75 | mΩ | VGS=10V, ID=3A | 2 | ||
| Drain-Source On-State Resistance | RDS(ON) | 70 | 90 | mΩ | VGS=4.5V, ID=2A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 110 | 150 | mΩ | VGS=2.5V, ID=1A | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VGS=±12V, VDS=0V; printed as ±10 | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS=0V, IS=1.0A | 2 |
CAD (KiCad official)
- Symbol:
LDN3408ET1G - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
ldn3408et1g-etched.step/ldn3408et1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ldn3408et1g.step/ldn3408et1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (5 pp, sha256
840fafed1d36a430, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).