component
LBTP880DPTUG
Public Made by Adomby adom
LRC Bipolar (BJT), TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 5h ago |
| viewers | 4h ago |
| lbtp880dptug-etched.glb | 5h ago |
| lbtp880dptug-etched.step | 4h ago |
| lbtp880dptug-hero.glb | 4h ago |
| lbtp880dptug-hero.overlay.json | 5h ago |
| lbtp880dptug.glb | 5h ago |
| lbtp880dptug.kicad_mod | 5h ago |
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| lbtp880dptug.lbr | 5h ago |
| lbtp880dptug.step | 5h ago |
| package.json | 5h ago |
| page.json | 4h ago |
| README.md | 5h ago |
LBTP880DPTUG
LRC · Bipolar (BJT) · TO-252
LBTP880DPTUG from LRC, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the PNP power transistor; datasheet test conditions use base drive of -400 mA for VCE(sat) at IC = -8 A and -800 mA for VBE(sat) at IC = -8 A. |
| 2 | Collector | passive | Collector terminal rated for -8 A DC and -16 A peak (tp < 5 ms), with VCEO of -80 V and VCBO of -80 V. |
| 3 | Emitter | passive | Emitter terminal; the emitter-base voltage is limited to -5 V (VEBO). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | VBR(CEO) | -80 | V | IC=-1 mA, IB=0 | 2 | ||
| Collector-Base Breakdown Voltage | VBR(CBO) | -80 | V | IC=-100 µA, IE=0 | 2 | ||
| Emitter-Base Breakdown Voltage | VBR(EBO) | -5 | V | IE=-100 µA, IC=0 | 2 | ||
| DC Current Gain | HFE | 60 | 200 | VCE=-1 V, IC=-2 A | 2 | ||
| DC Current Gain | HFE | 40 | VCE=-1 V, IC=-4 A | 2 | |||
| Base-Emitter saturation voltage | VBE(sat) | -1.5 | V | IC=-8 A, IB=-800 mA | 2 | ||
| Collector Current (DC) | IC | -8 | A | Ta=25°C | 1 | ||
| Peak collector current | ICM | -16 | A | tp < 5 ms | 1 | ||
| Collector-Emitter Voltage | VCEO | -80 | V | Ta=25°C | 1 | ||
| Collector-Base Voltage | VCBO | -80 | V | Ta=25°C | 1 | ||
| Emitter-Base Voltage | VEBO | -5 | V | Ta=25°C | 1 | ||
| Total Power Dissipation @ TA = 25°C | PD | 1.75 | W | Surface mounted on minimum pad sizes recommended (Note 1) | 1 | ||
| Total Power Dissipation @ TC = 25°C | PD | 20 | W | TC=25°C | 1 | ||
| Derate above 25°C (TA) | 0.014 | W/°C | Derate above 25°C, TA basis | 1 | |||
| Derate above 25°C (TC) | 0.16 | W/°C | Derate above 25°C, TC basis | 1 | |||
| Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RΘJA | 71.4 | °C/W | Surface mounted on minimum pad sizes recommended (Note 1) | 1 | ||
| Thermal Resistance, Junction-to-Case | RΘJC | 6.25 | °C/W | Note 2: shell is entire metal surface at bottom | 1 |
CAD (KiCad official)
- Symbol:
LBTP880DPTUG - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
lbtp880dptug-etched.step/lbtp880dptug-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lbtp880dptug.step/lbtp880dptug.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (6 pp, sha256
b1a2070e20e1d035, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).