component
LBSS84ELT1G
Public Made by Adomby adom
LRC MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| lbss84elt1g-etched.glb | 23d ago |
| lbss84elt1g-etched.step | 23d ago |
| lbss84elt1g-hero.glb | 23d ago |
| lbss84elt1g-hero.overlay.json | 23d ago |
| lbss84elt1g.glb | 23d ago |
| lbss84elt1g.kicad_mod | 23d ago |
| lbss84elt1g.kicad_sym | 23d ago |
| lbss84elt1g.lbr | 23d ago |
| lbss84elt1g.step | 23d ago |
| package.json | 23d ago |
| page.json | 17d ago |
| README.md | 17d ago |
LBSS84ELT1G
LRC · MOSFETs · SOT-23
LBSS84ELT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-to-source voltage limited to ±20 V and G-S ESD protected to ±1000V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; continuous drain current -130 mA at TA = 25°C. |
| 3 | Drain | passive | Drain terminal; drain-source voltage rated -60 V and pulsed drain current -520 mA (tp≤10μs). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain–Source Voltage | VDSS | -60 | V | 1 | |||
| Gate–to–Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Drain Current, continuous | ID | -130 | mA | TA = 25°C | 1 | ||
| Drain Current, pulsed | IDM | -520 | mA | tp ≤ 10 μs | 1 | ||
| Total Device Dissipation, FR-5 Board | PD | 225 | mW | FR-5 board (Note 1), TA = 25°C | 1 | ||
| Derate above 25°C | 1.8 | mW/°C | Derate above 25°C | 1 | |||
| Thermal Resistance, Junction–to–Ambient | RΘJA | 556 | °C/W | FR-5 board (Note 1), 1.0×0.75×0.062 in. | 1 | ||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | °C | 1 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | °C | 10 s | 1 | ||
| Drain–Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS = 0, ID = -250 μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -15 | μA | VGS = 0, VDS = -25 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -0.1 | μA | VGS = 0, VDS = -60 V | 2 | ||
| Gate–Body Leakage Current, Forward | IGSSF | 10 | μA | VGS = 20 V | 2 | ||
| Gate–Body Leakage Current, Reverse | IGSSR | -10 | μA | VGS = -20 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.9 | -2 | V | VDS = VGS, ID = -250 μA | 2 | |
| Static Drain–Source On–State Resistance | RDS(on) | 2 | 6 | Ω | VGS = -5.0 V, ID = -100 mA | 2 | |
| Static Drain–Source On–State Resistance | RDS(on) | 1.8 | 5 | Ω | VGS = -10 V, ID = -100 mA | 2 | |
| Transfer Admittance | /yfs/ | 50 | mS | VDS = -25 V, ID = -100 mA, f = 1.0 kHz | 2 | ||
| Continuous Source-Drain Current | IS | -0.13 | A | 2 | |||
| Pulsed Source-Drain Current | ISM | -0.52 | A | 2 |
CAD (KiCad official)
- Symbol:
LBSS84ELT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lbss84elt1g-etched.step/lbss84elt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lbss84elt1g.step/lbss84elt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (5 pp, sha256
6a0c71056e2850e2, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).