# LBC857CWT1G

**LRC** · Bipolar (BJT) · SC-70

LBC857CWT1G from LRC, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the BC857 series limits are VEBO -5.0 V and continuous collector current IC -100 mA. |
| 2 | EMITTER | passive | Emitter terminal; emitter-base breakdown voltage V(BR)EBO is specified at -5.0 V minimum (IE = -1.0 µA). |
| 3 | COLLECTOR | passive | Collector terminal; the BC857 series limits are VCEO -45 V and VCBO -50 V, with continuous collector current IC -100 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SC-70 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Cutoff Current | ICBO |  |  | -15 | nA | VCB = -30 V | 1 |
| Collector Cutoff Current | ICBO |  |  | -4 | µA | VCB = -30 V, TA = 150°C | 1 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -45 |  |  | V | IC = -10 mA | 1 |
| Collector-Emitter Breakdown Voltage | V(BR)CES | -50 |  |  | V | IC = -10 µA, VEB = 0 | 1 |
| Collector-Base Breakdown Voltage | V(BR)CBO | -50 |  |  | V | IC = -10 µA | 1 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 |  |  | V | IE = -1.0 µA | 1 |
| DC Current Gain (grade C) | hFE | 420 | 520 | 800 |  | IC = -2.0 mA, VCE = -5.0 V | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  |  | -0.3 | V | IC = -10 mA, IB = -0.5 mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  |  | -0.65 | V | IC = -100 mA, IB = -5.0 mA | 2 |
| Base-Emitter Voltage | VBE(on) | -0.6 |  | -0.75 | V | IC = -2.0 mA, VCE = -5.0 V | 2 |
| Base-Emitter Voltage | VBE(on) |  |  | -0.82 | V | IC = -10 mA, VCE = -5.0 V | 2 |
| Current-Gain, Bandwidth Product | fT | 100 |  |  | MHz | IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz | 2 |
| Output Capacitance | Cob |  |  | 4.5 | pF | VCB = -10 V, f = 1.0 MHz | 2 |
| Noise Figure | NF |  |  | 10 | dB | IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz | 2 |
| Collector Current, Continuous | IC |  |  | -100 | mAdc |  | 1 |
| Collector-Emitter Voltage | VCEO |  |  | -45 | V |  | 1 |
| Collector-Base Voltage | VCBO |  |  | -50 | V |  | 1 |
| Emitter-Base Voltage | VEBO |  |  | -5 | V |  | 1 |
| Junction and Storage Temperature | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Total Device Dissipation | PD |  |  | 150 | mW | FR-5 board, TA = 25°C | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 833 | °C/W |  | 1 |
| Base-Emitter Saturation Voltage | VBE(sat) |  | -0.7 |  | V | IC = -10 mA, IB = -0.5 mA | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) |  | -0.9 |  | V | IC = -100 mA, IB = -5.0 mA | 2 |

## CAD (KiCad official)

- Symbol: `LBC857CWT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SC-70 (KiCad packages3D, STEP)
- 3D model files: `lbc857cwt1g-etched.step` / `lbc857cwt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lbc857cwt1g.step` / `lbc857cwt1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [LRC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603129065696485376) (6 pp, sha256 `09bc35c0e15f266b`, retrieved 2026-11-06, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/lbc857cwt1g-datasheet.pdf)