component
LBC857CWT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SC-70. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| viewers | 6h ago |
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| lbc857cwt1g-etched.step | 6h ago |
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| lbc857cwt1g.glb | 6h ago |
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LBC857CWT1G
LRC · Bipolar (BJT) · SC-70
LBC857CWT1G from LRC, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the BC857 series limits are VEBO -5.0 V and continuous collector current IC -100 mA. |
| 2 | EMITTER | passive | Emitter terminal; emitter-base breakdown voltage V(BR)EBO is specified at -5.0 V minimum (IE = -1.0 µA). |
| 3 | COLLECTOR | passive | Collector terminal; the BC857 series limits are VCEO -45 V and VCBO -50 V, with continuous collector current IC -100 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SC-70 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Cutoff Current | ICBO | -15 | nA | VCB = -30 V | 1 | ||
| Collector Cutoff Current | ICBO | -4 | µA | VCB = -30 V, TA = 150°C | 1 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -45 | V | IC = -10 mA | 1 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CES | -50 | V | IC = -10 µA, VEB = 0 | 1 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -50 | V | IC = -10 µA | 1 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE = -1.0 µA | 1 | ||
| DC Current Gain (grade C) | hFE | 420 | 520 | 800 | IC = -2.0 mA, VCE = -5.0 V | 2 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.3 | V | IC = -10 mA, IB = -0.5 mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.65 | V | IC = -100 mA, IB = -5.0 mA | 2 | ||
| Base-Emitter Voltage | VBE(on) | -0.6 | -0.75 | V | IC = -2.0 mA, VCE = -5.0 V | 2 | |
| Base-Emitter Voltage | VBE(on) | -0.82 | V | IC = -10 mA, VCE = -5.0 V | 2 | ||
| Current-Gain, Bandwidth Product | fT | 100 | MHz | IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz | 2 | ||
| Output Capacitance | Cob | 4.5 | pF | VCB = -10 V, f = 1.0 MHz | 2 | ||
| Noise Figure | NF | 10 | dB | IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz | 2 | ||
| Collector Current, Continuous | IC | -100 | mAdc | 1 | |||
| Collector-Emitter Voltage | VCEO | -45 | V | 1 | |||
| Collector-Base Voltage | VCBO | -50 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Total Device Dissipation | PD | 150 | mW | FR-5 board, TA = 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 833 | °C/W | 1 | |||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.7 | V | IC = -10 mA, IB = -0.5 mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.9 | V | IC = -100 mA, IB = -5.0 mA | 2 |
CAD (KiCad official)
- Symbol:
LBC857CWT1G - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SC-70 (KiCad packages3D, STEP)
- 3D model files:
lbc857cwt1g-etched.step/lbc857cwt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lbc857cwt1g.step/lbc857cwt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (6 pp, sha256
09bc35c0e15f266b, retrieved 2026-11-06, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).