# LBC847ALT1G

**LRC** · Bipolar (BJT) · SOT-23

LBC847ALT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | NPN transistor base terminal; for LBC847 devices the datasheet gives an emitter-base voltage limit VEBO of 6.0 V. |
| 2 | EMITTER | passive | NPN transistor emitter terminal; for LBC847 devices the emitter-base breakdown voltage V(BR)EBO is specified with a minimum of 6.0 V. |
| 3 | COLLECTOR | passive | NPN transistor collector terminal; for LBC847 devices the datasheet limits VCEO to 45 V and continuous collector current IC to 100 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 45 |  |  | V | IC = 10 mA | 3 |
| Collector-Emitter Breakdown Voltage | V(BR)CES | 50 |  |  | V | IC = 10 µA, VEB = 0 | 3 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 |  |  | V | IC = 10 A | 3 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 |  |  | V | IE = 1.0 A | 3 |
| Collector Cutoff Current | ICBO |  |  | 15 | nA | VCB = 30 V | 3 |
| Collector Cutoff Current | ICBO |  |  | 5 | µA | VCB = 30 V, TA = 150°C | 3 |
| DC Current Gain | hFE | 110 | 200 | 420 |  | IC = 2.0 mA, VCE = 5.0 V | 3 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  |  | 0.25 | V | IC = 10 mA, IB = 0.5 mA | 3 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  |  | 0.6 | V | IC = 100 mA, IB = 5.0 mA | 3 |
| Base-Emitter Voltage | VBE(on) | 580 |  | 660 | mV | IC = 2.0 mA, VCE = 5.0 V | 3 |
| Current-Gain, Bandwidth Product | fT | 100 |  |  | MHz | IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz | 3 |
| Output Capacitance | Cobo |  |  | 4.5 | pF | VCB = 10 V, f = 1.0 MHz | 3 |
| Noise Figure | NF |  |  | 10 | dB | IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz | 3 |
| Collector-Emitter Voltage (LBC847) | VCEO |  |  | 45 | Vdc |  | 1 |
| Collector-Base Voltage (LBC847) | VCBO |  |  | 50 | Vdc |  | 1 |
| Emitter-Base Voltage (LBC847) | VEBO |  |  | 6 | Vdc |  | 1 |
| Collector Current, Continuous | IC |  |  | 100 | mAdc |  | 1 |
| Total Device Dissipation | PD |  |  | 225 | mW | FR-5 board, TA = 25°C | 1 |
| Total Device Dissipation | PD |  |  | 300 | mW | Alumina substrate, TA = 25°C | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 556 | °C/W | FR-5 board | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 417 | °C/W | Alumina substrate | 1 |
| Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |

## CAD (KiCad official)

- Symbol: `LBC847ALT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `lbc847alt1g-etched.step` / `lbc847alt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lbc847alt1g.step` / `lbc847alt1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [LRC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586182731394912256) (13 pp, sha256 `a2073d8a5b399f44`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/lbc847alt1g-datasheet.pdf)