component
LBC847ALT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownLBC847ALT1G
LRC · Bipolar (BJT) · SOT-23
LBC847ALT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | NPN transistor base terminal; for LBC847 devices the datasheet gives an emitter-base voltage limit VEBO of 6.0 V. |
| 2 | EMITTER | passive | NPN transistor emitter terminal; for LBC847 devices the emitter-base breakdown voltage V(BR)EBO is specified with a minimum of 6.0 V. |
| 3 | COLLECTOR | passive | NPN transistor collector terminal; for LBC847 devices the datasheet limits VCEO to 45 V and continuous collector current IC to 100 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 45 | V | IC = 10 mA | 3 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CES | 50 | V | IC = 10 µA, VEB = 0 | 3 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | V | IC = 10 A | 3 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | IE = 1.0 A | 3 | ||
| Collector Cutoff Current | ICBO | 15 | nA | VCB = 30 V | 3 | ||
| Collector Cutoff Current | ICBO | 5 | µA | VCB = 30 V, TA = 150°C | 3 | ||
| DC Current Gain | hFE | 110 | 200 | 420 | IC = 2.0 mA, VCE = 5.0 V | 3 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | V | IC = 10 mA, IB = 0.5 mA | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.6 | V | IC = 100 mA, IB = 5.0 mA | 3 | ||
| Base-Emitter Voltage | VBE(on) | 580 | 660 | mV | IC = 2.0 mA, VCE = 5.0 V | 3 | |
| Current-Gain, Bandwidth Product | fT | 100 | MHz | IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz | 3 | ||
| Output Capacitance | Cobo | 4.5 | pF | VCB = 10 V, f = 1.0 MHz | 3 | ||
| Noise Figure | NF | 10 | dB | IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz | 3 | ||
| Collector-Emitter Voltage (LBC847) | VCEO | 45 | Vdc | 1 | |||
| Collector-Base Voltage (LBC847) | VCBO | 50 | Vdc | 1 | |||
| Emitter-Base Voltage (LBC847) | VEBO | 6 | Vdc | 1 | |||
| Collector Current, Continuous | IC | 100 | mAdc | 1 | |||
| Total Device Dissipation | PD | 225 | mW | FR-5 board, TA = 25°C | 1 | ||
| Total Device Dissipation | PD | 300 | mW | Alumina substrate, TA = 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 556 | °C/W | FR-5 board | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 417 | °C/W | Alumina substrate | 1 | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
LBC847ALT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lbc847alt1g-etched.step/lbc847alt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lbc847alt1g.step/lbc847alt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (13 pp, sha256
a2073d8a5b399f44, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).