component
LBC846BLT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 22d ago |
| viewers | 22d ago |
| lbc846blt1g-etched.glb | 22d ago |
| lbc846blt1g-etched.step | 22d ago |
| lbc846blt1g-hero.glb | 22d ago |
| lbc846blt1g-hero.overlay.json | 22d ago |
| lbc846blt1g.glb | 22d ago |
| lbc846blt1g.kicad_mod | 22d ago |
| lbc846blt1g.kicad_sym | 22d ago |
| lbc846blt1g.lbr | 22d ago |
| lbc846blt1g.step | 22d ago |
| package.json | 22d ago |
| page.json | 16d ago |
| README.md | 16d ago |
LBC846BLT1G
LRC · Bipolar (BJT) · SOT-23
LBC846BLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN silicon transistor; the datasheet's emitter-base voltage rating VEBO is 6.0 V for LBC846 and LBC847/LBC850 and 5.0 V for LBC848/LBC849. |
| 2 | EMITTER | passive | Emitter terminal of the NPN silicon transistor; continuous collector current IC is rated at 100 mAdc maximum. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN silicon transistor; collector-emitter voltage VCEO is rated 65 Vdc for LBC846, 45 Vdc for LBC847/LBC850 and 30 Vdc for LBC848/LBC849. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector–Emitter Breakdown Voltage | V(BR)CEO | 65 | V | IC = 10 mA | 3 | ||
| Collector–Emitter Breakdown Voltage | V(BR)CES | 80 | V | IC = 10 µA, VEB = 0 | 3 | ||
| Collector–Base Breakdown Voltage | V(BR)CBO | 80 | V | IC = 10 A (as printed) | 3 | ||
| Emitter–Base Breakdown Voltage | V(BR)EBO | 6 | V | IE = 1.0 A (as printed) | 3 | ||
| Collector Cutoff Current | ICBO | 15 | nA | VCB = 30 V | 3 | ||
| Collector Cutoff Current | ICBO | 5 | µA | VCB = 30 V, TA = 150°C | 3 | ||
| DC Current Gain | hFE | 180 | 290 | 520 | IC = 2.0 mA, VCE = 5.0 V (LBC846B, LBC847B, LBC848B, LBC849B, LBC850B column) | 3 | |
| Collector–Emitter Saturation Voltage | VCE(sat) | 0.25 | V | IC = 10 mA, IB = 0.5 mA | 3 | ||
| Collector–Emitter Saturation Voltage | VCE(sat) | 0.6 | V | IC = 100 mA, IB = 5.0 mA | 3 | ||
| Base–Emitter Saturation Voltage | VBE(sat) | 0.7 | V | IC = 10 mA, IB = 0.5 mA | 3 | ||
| Base–Emitter Saturation Voltage | VBE(sat) | 0.9 | V | IC = 100 mA, IB = 5.0 mA | 3 | ||
| Base–Emitter Voltage | VBE(on) | 580 | 660 | 700 | mV | IC = 2.0 mA, VCE = 5.0 V | 3 |
| Base–Emitter Voltage | VBE(on) | 770 | mV | IC = 10 mA, VCE = 5.0 V | 3 | ||
| Current–Gain – Bandwidth Product | fT | 100 | MHz | IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz | 3 | ||
| Output Capacitance | Cobo | 4.5 | pF | VCB = 10 V, f = 1.0 MHz | 3 | ||
| Noise Figure | NF | 10 | dB | IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz; LBC846A,B, LBC847A,B,C, LBC848A,B,C | 3 | ||
| Collector–Emitter Voltage | VCEO | 65 | V | LBC846 | 1 | ||
| Collector–Base Voltage | VCBO | 80 | V | LBC846 | 1 | ||
| Emitter–Base Voltage | VEBO | 6 | V | LBC846 | 1 | ||
| Collector Current – Continuous | IC | 100 | mA | 1 | |||
| Total Device Dissipation FR–5 Board | PD | 225 | mW | TA = 25°C (FR–5 board, Note 1) | 1 | ||
| Derate above 25°C, FR–5 Board | PD | 1.8 | mW/°C | Derate above 25°C (FR–5 board) | 1 | ||
| Total Device Dissipation Alumina Substrate | PD | 300 | mW | TA = 25°C (Alumina substrate, Note 2) | 1 | ||
| Derate above 25°C, Alumina Substrate | PD | 2.4 | mW/°C | Derate above 25°C (Alumina substrate) | 1 | ||
| Thermal Resistance, Junction to Ambient (FR–5) | RJA | 556 | °C/W | Note 1 (FR–5 board) | 1 | ||
| Thermal Resistance, Junction to Ambient (Alumina) | RJA | 417 | °C/W | Note 2 (Alumina substrate) | 1 | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
LBC846BLT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lbc846blt1g-etched.step/lbc846blt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lbc846blt1g.step/lbc846blt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (13 pp, sha256
5d5223eb912f5722, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).