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Contents

README

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LBC846BLT1G

LRC · Bipolar (BJT) · SOT-23

LBC846BLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN silicon transistor; the datasheet's emitter-base voltage rating VEBO is 6.0 V for LBC846 and LBC847/LBC850 and 5.0 V for LBC848/LBC849.
2 EMITTER passive Emitter terminal of the NPN silicon transistor; continuous collector current IC is rated at 100 mAdc maximum.
3 COLLECTOR passive Collector terminal of the NPN silicon transistor; collector-emitter voltage VCEO is rated 65 Vdc for LBC846, 45 Vdc for LBC847/LBC850 and 30 Vdc for LBC848/LBC849.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector–Emitter Breakdown Voltage V(BR)CEO 65 V IC = 10 mA 3
Collector–Emitter Breakdown Voltage V(BR)CES 80 V IC = 10 µA, VEB = 0 3
Collector–Base Breakdown Voltage V(BR)CBO 80 V IC = 10 A (as printed) 3
Emitter–Base Breakdown Voltage V(BR)EBO 6 V IE = 1.0 A (as printed) 3
Collector Cutoff Current ICBO 15 nA VCB = 30 V 3
Collector Cutoff Current ICBO 5 µA VCB = 30 V, TA = 150°C 3
DC Current Gain hFE 180 290 520 IC = 2.0 mA, VCE = 5.0 V (LBC846B, LBC847B, LBC848B, LBC849B, LBC850B column) 3
Collector–Emitter Saturation Voltage VCE(sat) 0.25 V IC = 10 mA, IB = 0.5 mA 3
Collector–Emitter Saturation Voltage VCE(sat) 0.6 V IC = 100 mA, IB = 5.0 mA 3
Base–Emitter Saturation Voltage VBE(sat) 0.7 V IC = 10 mA, IB = 0.5 mA 3
Base–Emitter Saturation Voltage VBE(sat) 0.9 V IC = 100 mA, IB = 5.0 mA 3
Base–Emitter Voltage VBE(on) 580 660 700 mV IC = 2.0 mA, VCE = 5.0 V 3
Base–Emitter Voltage VBE(on) 770 mV IC = 10 mA, VCE = 5.0 V 3
Current–Gain – Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz 3
Output Capacitance Cobo 4.5 pF VCB = 10 V, f = 1.0 MHz 3
Noise Figure NF 10 dB IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz; LBC846A,B, LBC847A,B,C, LBC848A,B,C 3
Collector–Emitter Voltage VCEO 65 V LBC846 1
Collector–Base Voltage VCBO 80 V LBC846 1
Emitter–Base Voltage VEBO 6 V LBC846 1
Collector Current – Continuous IC 100 mA 1
Total Device Dissipation FR–5 Board PD 225 mW TA = 25°C (FR–5 board, Note 1) 1
Derate above 25°C, FR–5 Board PD 1.8 mW/°C Derate above 25°C (FR–5 board) 1
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25°C (Alumina substrate, Note 2) 1
Derate above 25°C, Alumina Substrate PD 2.4 mW/°C Derate above 25°C (Alumina substrate) 1
Thermal Resistance, Junction to Ambient (FR–5) RJA 556 °C/W Note 1 (FR–5 board) 1
Thermal Resistance, Junction to Ambient (Alumina) RJA 417 °C/W Note 2 (Alumina substrate) 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: LBC846BLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lbc846blt1g-etched.step / lbc846blt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lbc846blt1g.step / lbc846blt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (13 pp, sha256 5d5223eb912f5722, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF