component
LBC846BLT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
lbc846blt1g: specified limits as data (metadata.characteristics, 27 rows from the datasheet)
2 files changed
+366−1
README.md+34@@ -21,6 +21,40 @@ LBC846BLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from th | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector–Emitter Breakdown Voltage | V(BR)CEO | 65 | | | V | IC = 10 mA | 3 |+| Collector–Emitter Breakdown Voltage | V(BR)CES | 80 | | | V | IC = 10 µA, VEB = 0 | 3 |+| Collector–Base Breakdown Voltage | V(BR)CBO | 80 | | | V | IC = 10 A (as printed) | 3 |+| Emitter–Base Breakdown Voltage | V(BR)EBO | 6 | | | V | IE = 1.0 A (as printed) | 3 |+| Collector Cutoff Current | ICBO | | | 15 | nA | VCB = 30 V | 3 |+| Collector Cutoff Current | ICBO | | | 5 | µA | VCB = 30 V, TA = 150°C | 3 |+| DC Current Gain | hFE | 180 | 290 | 520 | | IC = 2.0 mA, VCE = 5.0 V (LBC846B, LBC847B, LBC848B, LBC849B, LBC850B column) | 3 |+| Collector–Emitter Saturation Voltage | VCE(sat) | | | 0.25 | V | IC = 10 mA, IB = 0.5 mA | 3 |+| Collector–Emitter Saturation Voltage | VCE(sat) | | | 0.6 | V | IC = 100 mA, IB = 5.0 mA | 3 |+| Base–Emitter Saturation Voltage | VBE(sat) | | | 0.7 | V | IC = 10 mA, IB = 0.5 mA | 3 |+| Base–Emitter Saturation Voltage | VBE(sat) | | | 0.9 | V | IC = 100 mA, IB = 5.0 mA | 3 |+| Base–Emitter Voltage | VBE(on) | 580 | 660 | 700 | mV | IC = 2.0 mA, VCE = 5.0 V | 3 |+| Base–Emitter Voltage | VBE(on) | | | 770 | mV | IC = 10 mA, VCE = 5.0 V | 3 |+| Current–Gain – Bandwidth Product | fT | 100 | | | MHz | IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz | 3 |+| Output Capacitance | Cobo | | | 4.5 | pF | VCB = 10 V, f = 1.0 MHz | 3 |+| Noise Figure | NF | | | 10 | dB | IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz; LBC846A,B, LBC847A,B,C, LBC848A,B,C | 3 |+| Collector–Emitter Voltage | VCEO | | | 65 | V | LBC846 | 1 |+| Collector–Base Voltage | VCBO | | | 80 | V | LBC846 | 1 |+| Emitter–Base Voltage | VEBO | | | 6 | V | LBC846 | 1 |+| Collector Current – Continuous | IC | | | 100 | mA | | 1 |+| Total Device Dissipation FR–5 Board | PD | | | 225 | mW | TA = 25°C (FR–5 board, Note 1) | 1 |+| Derate above 25°C, FR–5 Board | PD | | | 1.8 | mW/°C | Derate above 25°C (FR–5 board) | 1 |+| Total Device Dissipation Alumina Substrate | PD | | | 300 | mW | TA = 25°C (Alumina substrate, Note 2) | 1 |+| Derate above 25°C, Alumina Substrate | PD | | | 2.4 | mW/°C | Derate above 25°C (Alumina substrate) | 1 |+| Thermal Resistance, Junction to Ambient (FR–5) | RJA | | | 556 | °C/W | Note 1 (FR–5 board) | 1 |+| Thermal Resistance, Junction to Ambient (Alumina) | RJA | | | 417 | °C/W | Note 2 (Alumina substrate) | 1 |+| Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+ ## CAD (KiCad official) - Symbol: `LBC846BLT1G`
page.json+332−1@@ -147,6 +147,337 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "5d5223eb912f5722",+ "rows": [+ {+ "name": "Collector–Emitter Breakdown Voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "V",+ "min": 65,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector–Emitter Breakdown Voltage",+ "symbol": "V(BR)CES",+ "kind": "electrical",+ "unit": "V",+ "min": 80,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 µA, VEB = 0",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector–Base Breakdown Voltage",+ "symbol": "V(BR)CBO",+ "kind": "electrical",+ "unit": "V",+ "min": 80,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 A (as printed)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Emitter–Base Breakdown Voltage",+ "symbol": "V(BR)EBO",+ "kind": "electrical",+ "unit": "V",+ "min": 6,+ "typ": null,+ "max": null,+ "conditions": "IE = 1.0 A (as printed)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "VCB = 30 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VCB = 30 V, TA = 150°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 180,+ "typ": 290,+ "max": 520,+ "conditions": "IC = 2.0 mA, VCE = 5.0 V (LBC846B, LBC847B, LBC848B, LBC849B, LBC850B column)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector–Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.25,+ "conditions": "IC = 10 mA, IB = 0.5 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector–Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.6,+ "conditions": "IC = 100 mA, IB = 5.0 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Base–Emitter Saturation Voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.7,+ "conditions": "IC = 10 mA, IB = 0.5 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Base–Emitter Saturation Voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.9,+ "conditions": "IC = 100 mA, IB = 5.0 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Base–Emitter Voltage",+ "symbol": "VBE(on)",+ "kind": "electrical",+ "unit": "mV",+ "min": 580,+ "typ": 660,+ "max": 700,+ "conditions": "IC = 2.0 mA, VCE = 5.0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Base–Emitter Voltage",+ "symbol": "VBE(on)",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": null,+ "max": 770,+ "conditions": "IC = 10 mA, VCE = 5.0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Current–Gain – Bandwidth Product",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Cobo",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 4.5,+ "conditions": "VCB = 10 V, f = 1.0 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Noise Figure",+ "symbol": "NF",+ "kind": "electrical",+ "unit": "dB",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz; LBC846A,B, LBC847A,B,C, LBC848A,B,C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector–Emitter Voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 65,+ "conditions": "LBC846",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector–Base Voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "LBC846",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter–Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "LBC846",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current – Continuous",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation FR–5 Board",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "TA = 25°C (FR–5 board, Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Derate above 25°C, FR–5 Board",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW/°C",+ "min": null,+ "typ": null,+ "max": 1.8,+ "conditions": "Derate above 25°C (FR–5 board)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation Alumina Substrate",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "TA = 25°C (Alumina substrate, Note 2)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Derate above 25°C, Alumina Substrate",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW/°C",+ "min": null,+ "typ": null,+ "max": 2.4,+ "conditions": "Derate above 25°C (Alumina substrate)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient (FR–5)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 556,+ "conditions": "Note 1 (FR–5 board)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient (Alumina)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 417,+ "conditions": "Note 2 (Alumina substrate)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "thermal",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +519,4 @@ "visibility": { "public": true }-}+}