component
L9015QLT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| l9015qlt1g-etched.glb | 17d ago |
| l9015qlt1g-etched.step | 17d ago |
| l9015qlt1g-hero.glb | 17d ago |
| l9015qlt1g-hero.overlay.json | 17d ago |
| l9015qlt1g.glb | 17d ago |
| l9015qlt1g.kicad_mod | 17d ago |
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| l9015qlt1g.lbr | 17d ago |
| l9015qlt1g.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
L9015QLT1G
LRC · Bipolar (BJT) · SOT-23
L9015QLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet gives no separate pin-level limit, and the device ratings apply (VCEO -45 V, VCBO -50 V, IC -100 mA continuous). |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; emitter-base cutoff is specified at VEB = -3 V (IEBO max -100 nA). |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; collector-emitter saturation is specified at IC = -100 mA, IB = -5 mA with VCE(sat) max -0.3 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -45 | V | IC=-1.0mA | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE=-100µA | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -50 | V | IC=-100µA | 2 | ||
| Collector Cutoff Current | I CBO | -100 | nA | VCB=-40V | 2 | ||
| Emitter Cutoff Current | I EBO | -100 | nA | VEB=-3V | 2 | ||
| DC Current Gain (grade Q) | HFE | 150 | 300 | IC=-1mA, VCE=-5V; grade Q | 2 | ||
| Collector-Emitter Saturation Voltage | V CE | -0.3 | V | IC=-100mA, IB=-5mA | 2 | ||
| Collector-Emitter Voltage | VCEO | -45 | V | 1 | |||
| Collector-Base Voltage | VCBO | -50 | V | 1 | |||
| Collector Current - Continuous | IC | -100 | mA | 1 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Total Device Dissipation (FR-5 board) | PD | 225 | mW | FR-5 board, footnote (1) | 1 | ||
| Derating above 25°C (FR-5 board) | 1.8 | mW/°C | FR-5 board, derate above TA=25°C | 1 | |||
| Thermal Resistance, Junction to Ambient (FR-5 board) | RJA | 556 | °C/W | FR-5 board, footnote (1) | 1 | ||
| Total Device Dissipation (Alumina substrate) | PD | 300 | mW | Alumina substrate, footnote (2), TA=25°C | 1 | ||
| Derating above 25°C (Alumina substrate) | 2.4 | mW/°C | Alumina substrate, derate above TA=25°C | 1 | |||
| Thermal Resistance, Junction to Ambient (Alumina substrate) | RJA | 417 | °C/W | Alumina substrate, footnote (2) | 1 |
CAD (KiCad official)
- Symbol:
L9015QLT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
l9015qlt1g-etched.step/l9015qlt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);l9015qlt1g.step/l9015qlt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (4 pp, sha256
1e8c0fd41f743079, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).