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Contents

README

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L9015QLT1G

LRC · Bipolar (BJT) · SOT-23

L9015QLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives no separate pin-level limit, and the device ratings apply (VCEO -45 V, VCBO -50 V, IC -100 mA continuous).
2 EMITTER passive Emitter terminal of the PNP transistor; emitter-base cutoff is specified at VEB = -3 V (IEBO max -100 nA).
3 COLLECTOR passive Collector terminal of the PNP transistor; collector-emitter saturation is specified at IC = -100 mA, IB = -5 mA with VCE(sat) max -0.3 V.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO -45 V IC=-1.0mA 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA 2
Collector-Base Breakdown Voltage V(BR)CBO -50 V IC=-100µA 2
Collector Cutoff Current I CBO -100 nA VCB=-40V 2
Emitter Cutoff Current I EBO -100 nA VEB=-3V 2
DC Current Gain (grade Q) HFE 150 300 IC=-1mA, VCE=-5V; grade Q 2
Collector-Emitter Saturation Voltage V CE -0.3 V IC=-100mA, IB=-5mA 2
Collector-Emitter Voltage VCEO -45 V 1
Collector-Base Voltage VCBO -50 V 1
Collector Current - Continuous IC -100 mA 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation (FR-5 board) PD 225 mW FR-5 board, footnote (1) 1
Derating above 25°C (FR-5 board) 1.8 mW/°C FR-5 board, derate above TA=25°C 1
Thermal Resistance, Junction to Ambient (FR-5 board) RJA 556 °C/W FR-5 board, footnote (1) 1
Total Device Dissipation (Alumina substrate) PD 300 mW Alumina substrate, footnote (2), TA=25°C 1
Derating above 25°C (Alumina substrate) 2.4 mW/°C Alumina substrate, derate above TA=25°C 1
Thermal Resistance, Junction to Ambient (Alumina substrate) RJA 417 °C/W Alumina substrate, footnote (2) 1

CAD (KiCad official)

  • Symbol: L9015QLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: l9015qlt1g-etched.step / l9015qlt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); l9015qlt1g.step / l9015qlt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (4 pp, sha256 1e8c0fd41f743079, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF